o1 DE ss7sos1 0017370 4 i 3875081 G E SOLID STATE ry Weneral-rurpose rower transisiurs '2N3773, 2N4348, 2N6259 High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use Features: High dissipation capability 120 W (2N4348), 150 W (2N3773), 250 W (2N6259) = 5-A specification for hee, Vag, and Vcefsat) (2N4348} 8-A specification for hee, Vee, and Vee(sat) (2N3773, 2N6259) The RCA-2N3773, 2N4348, and 2N6259 are silicon n-p-n transistors intended for a wide variety of medium-voltage, high-current applications, Typical applications for these transistors include power-switching circuits, audio ampli- fiers, series and shunt-regulator driver and output stages, de-to-de converters, inverters, and solenoid (hammer)/relay driver service, This device employs the popular JEDEC TO-204AA/TO-3 vackage. MAXIMUM RATINGS, Absolute-Maximum Values: *COLLECTOR-TO-BASE VOLTAGE, Vong *COLLECTOR-EMITTER VOLTAGE, Vicey *COLLECTOR-EMITTER VOLTAGE, Vero "EMITTER-BASE VOLTAGE, Veao COLLECTOR CURRENT DG. Ie BASE CURRENT DC, Ip 8 COLLECTOR POWER DISSIPATION, P, (T, = 25C) Derate Linearly above 25C JUNCTION TEMPERATURE, T, "STORAGE TEMPERATURE, T, stg In accordance with JEDEC registration data. 374 D1E 17370 bd 733-718 File Number 526 TERMINAL DESIGNATIONS c (FLANGE) 92CS-27516 JEDEC TO-204AA/TO-3 2N4348 2N3773 2N6259 eee ee eee 140 160 170 V teen nena 140 160 170 Vv eae eaees 120 140 150 v vente eneeee T 7 7 V vee eeeee 10 16 16 A sees eeeee 30 30 30 A be neceuenes 4 4 4 A ene eens 15 15 15 A vane eeees 120 150 250 Ww ween e eens 0.686 0.857 1.43 WC tence nee 200 C beter eees -65 to +200 C01 De 3875081 0017371 & i 3875081 G E SOLID STATE 01 17371 bo T33-I3 General-Purpose Power Transistors 2N3773, 2N4348, 2N6259 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL | VOLTAGE /CURRENT UNITS V de A de 2N4348 2N3773 2N6269 Vce | Yee | tc ig | Min. ] Max.) Min, | Max. Min, | Max. . Collector-Cutoff Current: _ _ _ on With emitter apen, Vog=140 V 'cBO 2 mA With base-emitter 120 | -1.6 ~ 2) -]7 on on Junction reverse-biased 'cex 140 | -1.5 7 ~ 7 2) - ]- mA 150 | -1.5 - - - - 0.2 With base-emitter 120 | -1.5 - to} - | - - [- Junction reverse-biased Icex 140 | -1.5 = = 10 - - mA and Tc = 150C . 150 | -1.5 - - - - - 4 100 - |200 ] - - - - With base open IcEO 120 _ _ _ 10 _ 2 mA *lEmitter-Cutotf Current leso 7 0 - 5 - 5 - 2 mA 4 5a 16} 60 | - - ~ . 3 - - 1 - ~ OC Forward Current 4 8 5) 60 Transfer Ratio hee 2 8 7 ~ 7 ~ 15) 60 4 104 10] - - = - 4 16? - - 5] - 10] - Collector-to-Emitter Sustaining Voltage:** Voexisus) -15401 140] 160] 170] Vv With base-emitter junction reverse-biased (Rag = 1002) With external base-to-emitter a . 40] - ~- = resistence (Rg) = 1002 Veceartsus} 0.2 140 150 160. v | With base open Vceotsus) 0.24} of 120 - | 140] 1so] ~ v , 4 5e -{ 2}/-]/-][-]- . a - - - ; - | Base-to-Emitter Voltage Vee > a _ _ _ 22 _ 2 Vv 4 104 - 3] - ~ - - 52/08] - 1} - | - - |- "ICollector-to-Emitter 84] 08] - ~|[-=- Jual] - 1 Vv Saturation Voltage Vecelsat) . 103 |1.25} 2 _ - - - 167} 3.2] - - - 4 - $2.5 Second-Breakdown Collector Current 1 A With base forward-biased and | S/ 80 16} - |= J- f= de 1-s nonrepetitive pulse 100 ~ - 15] 2.5] *|IMagnitude of Common-Emitter, Smalt-Signal, Short-Circuit, [ote] 4 1 al 4) _ al Forward Currant Transfer Ratio (f = 0 kHz) */]Common-Emitter, Small- Signal, Short-Circuit, Forward Current Transfer Me 4 ' 40 40 40 Ratio (f = 1 kHz) - Therma! Resistance R - x 1.17 - . 9 Junction-to-Case asc 1.46 07 Ciw In accordance with JEDEC registration data. **The sustaining voltages Voex(Sus} and Vcgo(sus) MUST NOT be measured on a curve tracer. 4Pulsed: pulse duration = 300us, rap. rate = 60 Hz, duty factor < 2.%. 375O10 De #3875081 0017372 @ i SOLID STAT O1E 17372. 7p 1 S3'[3 General-Purpose Power Transistors , 2N3773, 2N4348, 2N6259 *o~ Te Nees 'o 200 1000 z 600 COMMON EMITTER = 480 300 Yoe** an w 8 z= Pa a 2 z 100 < = 100 2 50 s w & c 30 : 5 3 * 3 8 5 9 3 a 40 80 120 160 200 001 003 0.4 03 1 3 10 20 CASE TEMPERATURE Ty, [C} Fig. 1 Dissipation derating curve for all types. Yoeqsay 7 'S COMMON EMITTER lolly =10 GOLLECTOR CURRENT Ig (AD Fig. 2 Typical dc-beta characteristics for all types, Vegtsaty 'c COMMON EMITTER Fa Io/lg = 10 Zz 08 3 3 z= 2 a % s eo ce oe esy4 Fe o1 6&3 58 & 306 [ = 0 wy | & x 005 E a> Sw 03 2w z Oo 203 oe 1 ae 2S oy od aos * 8S oot oor 003 91 03 t 3 10 20 001 003 01 03 1 3 10 20 COLLECTOR CURRENT 1, (A) GOLLEGTOR CURRENT Ig {A} Fig, 3 Typical collector-to-emitter saturation Fig. 4 Typical base-to-emitter saturation voltage characteristics for all types. voltage as a function of collactor current for all types. 'oYce 20 COMMON EMITTER ev C7 BE Tg = 25C 6 16 COMMON EMITTER => Voe 24Vv 12 Lo - 12 < 2 Z 8 2 oa x 5 3 3 K a B 5, 8 6 0 04 08 12 16 20 0 2 4 6 8 10 BASE-EMITTER VOLTAGE Voge (V) GOLLECTOR-EMITTER VOLTAGE Vo; (V) Fig. 5 Typical output characteristics for all types, Fig. 6 Typical transter characteristics for 2N3773 and 2N4348. 376 a