BGX7101HN/1,118 - NXP Semiconductors

1. General description

The BGX7101 device combines h igh performance, high linearity I and Q modulation paths

for use in radio frequency up-conversion. It supports RF frequency outputs in the range

from 400 MHz to 4000 MHz. The BGX7101 IQ modulator is performance independent of

the IQ common mode vo ltage. The modulator provides a typical output power at 1 dB gain

compression (PL(1dB)) value of 12 dBm and a typical 27 dBm output third-order intercept

point (IP3o). Unadjusted sideband suppression and carrier feedthrough are 50 dBc and

45 dBm respectively . A ha rdware control pin provides a fast po wer-down/power-up mode

functionality which allows significant power saving.

2. Features and benefits

400 MHz to 4000 MHz frequency operating range

Stable performance across 0.25 V to 3.3 V common-mode voltage input

Independent low-current power-down hardware control pin

12 dBm output 1 dB compression point

27 dBm output third-order intercept point (typical)

Integrated active biasing

Single 5 V supply

100  differential IQ input impedance

Matched 50  single-ended RF output impedance

ESD protection at all pins

3. Applications

Mobile networ k infrastructure

Microwave and broadband

RF and IF applications

Industrial applications

4. Device family

The BGX7101 operates in the RF frequency range of 400 MHz to 4000 MHz with

modulation bandwidths up to 650 MHz.

BGX7101

Transmitter IQ modulator

Rev. 4 — 10 January 2013 Product data sheet

HVQFN24

Product data sheet Rev. 4 — 10 January 2013 2 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

5. Ordering information

6. Functional diagram

Diffe rential I and Q baseband input s are each fed to an associated upconverter mixer. The

Local Oscillator (LO) carrier input is buffered and split into 0 degree and 90 degree

signals. The in-phase signal is passed to the I mixer and the 90 degree phase-changed

signal is passed to the Q mixer. The outputs of the mixers are summed to produce the

resulting RF output signal.

7. Pinning information

7.1 Pinning

The BGX7101 device pinout is designed to allow easy interfacing when mounted on a

Printed-Circuit Board (PCB). When viewing the device from above, the two differential IQ

baseband input paths are at the top and bottom. The common LO input is at the left and

the RF output at the right. Multiple power and ground pins allow for independent supply

domains, improving isolation between blocks. A small package footprint is chosen to

reduce bond-wire induced series inductance in the RF ports.

The input and output pin matching is described in Section 12 “Application information”.

Table 1. Ordering information

Type number Package

Name Description Version

BGX7101HN HVQFN24 plastic thermal enhanced very thin quad flat package; no leads; 24

terminals; body 4  4  0.85 mm SOT616-3

Fig 1. Functional block diagram

aaa-001505

RF output

I modulation in

Q modulation in

local oscillator in

0°

90°

BGX7101

Product data sheet Rev. 4 — 10 January 2013 3 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

7.2 Pin description

Fig 2. Pin co nfi gura tio n

aaa-001503

BGX7101

Transparent top view

i.c.

LOGND

RFGND

LO_N i.c.

LO_P RFOUT

LOGND RFGND

POFF_P VCC_RF(5V0)

RFGND

MODQ_N

MODQ_P

RFGND

VCC_LO(5V0)

i.c.

MODI_N

MODI_P

RFGND

i.c.

terminal 1

index area

613

514

415

316

217

118

Table 2. Pin description

Symbol Pin Type[1] Description

POFF_P 1 I active HIGH logic input to power-down modulator

LOGND 2 G LO ground

LO_P 3 I LO positive input[2]

LO_N 4 I LO negative input[2]

LOGND 5 G LO ground

LOGND 6 G LO ground

RFGND 7 G RF ground

RFGND 8 G RF ground

MODQ_N 9 I modulator quadrature negative input

MODQ_P 10 I modulator quadrature positi ve input

RFGND 11 G RF ground

RFGND 12 G RF ground

i.c. 13 - internally connected; to be tied to ground

RFGND 14 G RF ground

i.c. 15 - internally connected; to be tied to ground

RFOUT 16 O modulator single-ended RF output[2]

RFGND 17 G RF ground

VCC_RF(5V0) 18 P RF analog power supply 5 V

i.c. 19 - internally connected; to be tied to ground

RFGND 20 G RF ground

MODI_P 21 I modulator in-phase positive input

MODI_N 22 I modulator in-phase negative input

Product data sheet Rev. 4 — 10 January 2013 4 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

[1] G = ground; I = input; O = output; P = power.

[2] AC coupling required as shown in Figure 4 “Typical wideband application diagram”.

8. Functional description

8.1 General

Each IQ baseband input has a 100  differential input impedance a llowing straightforward

matching, from the DAC output through the baseband filter. The device allows operation

with IQ input common-mode voltages between 0.25 V and 3.3 V allowing direct

connection to a broad family of DACs. The LO and RF ports provide broadband 50 

termination to RF source and loads.

The chip can be placed in inactive mode (see Section 8.2 “Shutdown control”).

8.2 Shutdown control

The modulator can be placed into inactive mode by the voltage level at power-up disable

pin (pin 1, POFF_P). The time required to pass between active and low-current states is

less than 1 s.

The shut down feature of IQ mo dulator d uring switching does not induce any unlock of the

LO synthesizer in base st ation application thanks to the low impedance variation o f the LO

input.

The graph (see Figure 3) describes the impact on LO impedance variation during the

switching time.

i.c. 23 - internally connected; to be tied to ground

VCC_LO(5V0) 24 P LO analog power supply 5 V

Exposed die

pad - G exposed die pad; must be connected to RF ground

Table 2. Pin description …continued

Symbol Pin Type[1] Description

Table 3. Shutdown control

Mode Mode description Functional des crip tion POFF_P

Idle modulator fully off; minimal supply current shutdown enabled > 1.5 V

Active modulator active mode shutdown disabled < 0.5 V

Product data sheet Rev. 4 — 10 January 2013 5 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

9. Limiting values

Fig 3. LO input return loss variation (S11_LO)

t (μs)

0108462

aaa-004637

-13.61

-13.59

-13.63

-13.57

-13.55

S11

(dB)

-13.65

off

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 5.5 V

Pi(lo) local oscillator input power - 16 dBm

Po(RF) RF output power - 20 dBm

Tmb mounting base temperature 40 +85 C

Tjjunction temperature - +150 C

Tstg storage temperature 65 +150 C

VESD electrostatic discharge

voltage EIA/JESD22-A114 (HBM) 2500 +2500 V

EIA/JESD22-C101

(FCDM) 650 +650 V

Product data sheet Rev. 4 — 10 January 2013 6 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

10. Thermal characteristics

11. Characteristics

[1] Operation outside this range is possible but parameters are not guaranteed.

[2] x = N or P.

[3] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

Pin POFF_P

Viinput voltage active HIGH logic input to

power-down modulator -3.5V

Pins MODI_N, MODI_P, MODQ_N and MOD Q_P

Viinput voltage 0 5 V

VID differential input voltage DC 1+1V

Table 4. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-mb) thermal resistance from junction to mounting base 10 K/W

Table 6. Characteristics

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 4.75 5 5.25 V

ICC(tot) total suppl y curre nt modulator i n act i ve mo de

flo = 900 MHz - 172 - mA

flo =2GHz - 180 - mA

flo = 2.5 GHz - 182 - mA

flo = 3.5 GHz - 188 - mA

modulator in inactive mode;

Tmb =25C-6-mA

flo local oscillator frequency [1] 400 - 4000 MHz

Pi(lo) local oscillator input power [1] 90 +6dBm

Pins MODI_x and MODQ_x[2]

Vi(cm) common-mode input voltage 0.25 - 3.3 V

S22_RF RF output return loss - 10 - dB

S11_LO LO input return loss - 12 - dB

MODI and MODQ[3]

BWmod modulation bandwidth gain fall off < 1 dB;

RS=50

-650-MHz

Ri(dif) differential input resistance - 100 - 

Ci(dif) differential input capacitance - 1.8 - pF

Product data sheet Rev. 4 — 10 January 2013 7 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

Table 7. Characteristics at 750 MHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4-dBm

PL(1dB) output power at 1 dB gain

compression -12-dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-28-dBm

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-71-dBm

Nflr(o) output noise floor no modulation present - 159 - dBm/Hz

modulation at MODI and

MODQ[1]; Po(RF) =10 dBm -158.5 - dBm/Hz

SBS sideband suppression unadjusted - 63 - dBc

CF carrier feedthrough unadjusted - 51 - dBm

HD(bb) baseband harmon ic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -76-dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -89-dBc

Table 8. Characteristics at 910 MHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4-dBm

PL(1dB) output power at 1 dB gain

compression -12-dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-28-dBm

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-75-dBm

Product data sheet Rev. 4 — 10 January 2013 8 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

Nflr(o) output noise floor no modulation present - 159 - dBm/Hz

modulation at MODI and

MODQ[1]; Po(RF) =10 dBm -158.5 - dBm/Hz

SBS sideband suppression unadjusted - 49 - dBc

CF carrier feedthrough unadjusted - 57 - dBm

HD(bb) baseband harmon ic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -77-dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -92-dBc

Table 8. Characteristics at 910 MHz …continued

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Table 9. Characteristics at 1.840 GHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4-dBm

PL(1dB) output power at 1 dB gain

compression -12-dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-27-dBm

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-71-dBm

Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz

modulation at MODI and

MODQ[1]; Po(RF) =10 dBm -158 - dBm/Hz

SBS sideband suppression unadjusted - 55 - dBc

CF carrier fee dthrough unadjusted - 50 - dBm

HD(bb) baseband harmo nic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -84-dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -86-dBc

Product data sheet Rev. 4 — 10 January 2013 9 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

Table 10. Characteristics at 1.960 GHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4-dBm

PL(1dB) output power at 1 dB gain

compression -12-dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-27-dBm

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-72-dBm

Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz

modulation at MODI and

MODQ[1]; Po(RF) =10 dBm -158 - dBm/Hz

SBS sideband suppression unadjusted - 57 - dBc

CF carrier fee dthrough unadjusted - 47 - dBm

HD(bb) baseband harmo nic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -72-dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -86-dBc

Table 11. Characteristics at 2.140 GHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4-dBm

PL(1dB) output power at 1 dB gain

compression -12-dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-27-dBm

Product data sheet Rev. 4 — 10 January 2013 10 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-75-dBm

Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz

modulation at MODI and

MODQ[1]; Po(RF) =10 dBm -158 - dBm/Hz

SBS sideband suppression unadjusted - 63 - dBc

CF carrier fee dthrough unadjusted - 45 - dBm

HD(bb) baseband harmo nic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -68-dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -86-dBc

Table 11. Characteristics at 2.140 GHz …continued

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Table 12. Characteristics at 2.650 GHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4 - dBm

PL(1dB) output power at 1 dB gain

compression -12- dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-26- dBm

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-65- dBm

Nflr(o) output noise floor no modulation present - 158.5 - dBm/Hz

modulation at MODI and

MODQ[1]; Po(RF) =10 dBm -158 - dBm/Hz

SBS sideband suppression unadjusted - 50 - dBc

Product data sheet Rev. 4 — 10 January 2013 11 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

[1] MODI = MODI_P MODI_N and MODQ = MODQ_P MODQ_N.

[2] Measurements done in supradyne mode.

CF carrier feedthrough unadjusted - 45 - dBm

HD(bb) baseband harmonic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -65- dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) differential

[2] -88- dBc

Table 12. Characteristics at 2.650 GHz …continued

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Table 13. Characteristics at 3.650 GHz

Modulation source resistance per pin = 50



; POFF_P connected to GND (shutdown disabled); VCC =5V;

Tmb range =





C to +85



C; Pi(lo) = 0 dBm; IQ frequency = 5 MHz unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power 1 V (p-p) differential on MODI

and MODQ[1] -4-dBm

PL(1dB) output power at 1 dB gain

compression -12-dBm

IP3ooutput third-order intercept point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-25-dBm

IP2ooutput second-order intercept

point IQ frequency 1 = 4.5 MHz;

IQ frequency 2 = 5.5 MHz;

output power per

tone = 10 dBm

-64-dBm

Nflr(o) output noise floor no modulation present - 158 - dBm/Hz

modulation at MODI and

MODQ[1]; P o(RF) =10 dBm -158 - dBm/Hz

SBS sideband suppression unadjusted - 57 - dBc

CF ca rrier feedthrough unadjusted - 42 - dBm

HD(bb) baseband harmo nic distortion

level harmonic distortion at fLO +

2baseband frequency

measured with 1 MHz tone at

1 V (p-p) diff erential

[2] -64-dBc

harmonic distortion at fLO +

3baseband frequency

measured with 1 MHz tone at

1 V (p-p) diff erential

[2] -80-dBc

Product data sheet Rev. 4 — 10 January 2013 12 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

12. Application information

Figure 4 shows a typical wideband (from 0.4 GHz to 4 GH z) applic ation circuit. Refer to

the application note for narrowband optimum component values.

12.1 External DAC interfacing

Nominal DAC single-ended output currents are between 0 mA to 20 mA. When driving

into 25  impedance, this creates 250 mV peak-single signal (1 V (p-p) differential). Half

of the impedance is placed at the DAC outputs as 50  load resistors, the other half is

provided by the modulator itself. In this way, the differential filter can be properly

terminated by 100  at both ends.

Fig 4. Typical wideband application diagram

TC1-1-43A+

BGX7101

VCC

VCC_LO(5V0)

RFOUT RFOUTPUT

RFGND

22 pF

0.4 pF

39 pF

100 nF

LOGND

POFF_P

modulator in-phase

negative input

modulator in-phase

positive input

modulator quadrature

negative input

modulator quadrature

positive input

22 pF

100 nF

18 pF

24 23 22 21 20 19

789101112

LOGND

RFGND

MODQ_N

MODQ_P

RFGND

i.c.

MODI_N

MODI_P

RFGND

i.c.

LOGND

LO_N

PRIMARY

LO_P15

LO input

90°

0°

i.c.

RFGND

i.c.

VCC_RF(5V0)

0.3 pF

aaa-002966

Product data sheet Rev. 4 — 10 January 2013 13 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

12.2 RF

Good RF port matching typically requires some reactive components to tune-out residual

inductanc e or cap acit ance. As the LO input s and RF output are intern ally DC biased, b oth

pins need a series AC-coupling capacitor.

Fig 5. Typical interface

DAC

BGX7101

filter

location

aaa-002967

50 Ω

100 Ω diff

Product data sheet Rev. 4 — 10 January 2013 14 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

13. Test information

Parameters for the following drawings: VCC =5V; T

mb =25C; Pi(lo) =0dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.42 V (p-p) differential sine wave; Vi(cm) =0.5V;

broadband output match; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 6. Current consumption versus flo and Tmb

LO frequency (MHz)

400 400028001600

aaa-002860

0.14

0.18

0.22

0.10

Current

consumption

(mA)

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 15 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the five following drawings: VCC =5V; T

mb =25C; Pi(lo) =0dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.42 V (p-p) differential sine wave; Vi(cm) =0.5V;

broadband output match; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V

Fig 7. Po versus flo and Tmb Fig 8. Po versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =9dBm.

(3) Pi(lo) =6dBm.

(4) Pi(lo) =+6dBm.

(1) Vi(cm) =0.5V.

(2) Vi(cm) =0.25V.

(3) Vi(cm) =1.5V.

(4) Vi(cm) =2.5V.

Fig 9. Po versus flo and Pi(lo) Fig 10. Po versus flo and Vi(cm)

LO frequency (MHz)

400 400028001600

aaa-002861

-15

-11

-7

-3

output

power

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002862

-15

-11

-7

-3

output

power

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002863

-15

-11

-7

-3

output

power

(dBm)

(1)

(3)

(2)

(4)

LO frequency (MHz)

400 400028001600

aaa-002864

-15

-11

-7

-3

output

power

(dBm)

(1)

(2)

(3)

(4)

Product data sheet Rev. 4 — 10 January 2013 16 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

(1) flo = 2140 MHz.

Fig 11. Po versus baseband voltage at 2140 MHz

baseband voltage differential (V (p-p))

10-2 10110-1

aaa-002865

output

power

(dBm)

-40

-20

Product data sheet Rev. 4 — 10 January 2013 17 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the four following drawings: VCC =5V; T

mb =25C; Pi(lo) =0dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.42 V (p-p) differential sine wave; Vi(cm) =0.5V;

broadband output match; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V.

Fig 12. PL(1dB) versus flo and Tmb Fig 13. PL(1dB) versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =3dBm.

(3) Pi(lo) =+3dBm.

(1) Vi(cm) =0.5V.

(2) Vi(cm) =0.25V.

(3) Vi(cm) =1.5V.

(4) Vi(cm) =2.5V.

Fig 14. PL(1dB) versus flo and Pi(lo) Fig 15. PL(1dB) versus flo an d Vi(cm)

LO frequency (MHz)

400 400028001600

aaa-002866

PL(1dB)

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002867

PL(1dB)

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002868

PL(1dB)

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002869

PL(1dB)

(dBm)

(1)

(2)

(3)

(4)

Product data sheet Rev. 4 — 10 January 2013 18 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the four following drawings: VCC =5V; T

mb =25C; Pi(lo) = 0 dBm; two

tones; tone 1: IQ frequency = 4.5 MHz and tone 2: IQ frequency = 5.5 MHz; Po per

tone = 10 dBm; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified.

(1) Tmb = +25 C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V.

Fig 16. IP3o versus flo and Tmb Fig 17. IP3o versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =9dBm.

(3) Pi(lo) =6dBm.

(4) Pi(lo) =+6dBm.

(1) Vi(cm) =0.5V.

(2) Vi(cm) =0.25V.

(3) Vi(cm) =1.5V.

(4) Vi(cm) =2.5V.

Fig 18. IP3o versus flo and Pi(lo) Fig 19. IP3o versus flo and Vi(cm)

LO frequency (MHz)

400 400028001600

aaa-002870

IP3O

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002871

IP3O

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002872

IP3O

(dBm)

(1)

(2)

(3)

(4)

LO frequency (MHz)

400 400028001600

aaa-002873

IP3O

(dBm)

(1)

(2)

(3)

(4)

Product data sheet Rev. 4 — 10 January 2013 19 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the four following drawings: VCC =5V; T

mb =25C; Pi(lo) = 0 dBm; two

tones; tone 1: IQ frequency = 4.5 MHz and tone 2: IQ frequency = 5.5 MHz; Po per

tone = 10 dBm; Vi(cm) = 0.5 V; broadband output match; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V.

Fig 20. IP2o versus flo and Tmb Fig 21. IP2o versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =9dBm.

(3) Pi(lo) =6dBm.

(4) Pi(lo) =+6dBm.

(1) Vi(cm) =0.5V.

(2) Vi(cm) =0.25V.

(3) Vi(cm) =1.5V.

(4) Vi(cm) =2.5V.

Fig 22. IP2o versus flo and Pi(lo) Fig 23. IP2o versus flo and Vi(cm)

LO frequency (MHz)

400 400028001600

aaa-002874

100

IP2O

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002874

100

IP2O

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002876

100

IP2O

(dBm)

(1)

(2)

(3)

(4)

LO frequency (MHz)

400 400028001600

aaa-002877

120

IP2O

(dBm)

(1)

(2)

(3)

(4)

Product data sheet Rev. 4 — 10 January 2013 20 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the five following drawings: VCC =5V; T

mb =25C; Pi(lo) =0dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.42 V (p-p) differential sine wave; Vi(cm) =0.5V;

broadband output match; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V.

Fig 24. Unadjusted CF ve rs u s flo and Tmb Fig 25. Unad justed CF versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =9dBm.

(3) Pi(lo) =6dBm.

(4) Pi(lo) =+6dBm.

(1) Vi(cm) =0.5V.

(2) Vi(cm) =0.25V.

(3) Vi(cm) =1.5V.

(4) Vi(cm) =2.5V.

Fig 26. Unadjusted CF ve rs u s flo and Pi(lo) Fig 27. Unadjusted CF versus flo and Vi(cm)

LO frequency (MHz)

400 400028001600

aaa-002878

-20

-40

-60

-80

unadjusted carrier

feedthrough

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002879

-20

-40

-60

-80

unadjusted carrier

feedthrough

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002880

-20

-40

-60

-80

unadjusted carrier

feedthrough

(dBm)

(1)

(2)

(3)

(4)

LO frequency (MHz)

400 400028001600

aaa-002881

-20

-40

-60

-80

unadjusted carrier

feedthrough

(dBm)

(1)

(2)

(4)(4)

(3)

Product data sheet Rev. 4 — 10 January 2013 21 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 28. Adjusted CF versus flo and Tmb after nulling at 25 C

LO frequency (MHz)

495 409528951695

aaa-002882

-100

-80

-60

-40

-20

(1)

(2)

(3)

adjusted carrier

feedthrough

(dBm)

Product data sheet Rev. 4 — 10 January 2013 22 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the five following drawings: VCC =5V; T

mb =25C; Pi(lo) =0dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.42 V (p-p) differential sine wave; Vi(cm) =0.5V;

broadband output match; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V.

Fig 29. Unadjusted SBS versus flo and Tmb Fig 30. Unadjusted SBS versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =9dBm.

(3) Pi(lo) =6dBm.

(4) Pi(lo) =+6dBm.

(1) Vi(cm) =0.5V.

(2) Vi(cm) =0.25V.

(3) Vi(cm) =1.5V.

(4) Vi(cm) =2.5V.

Fig 31. Unadjusted SBS versus flo and Pi(lo) Fig 32. Unadjusted SBS versus flo and Vi(cm)

LO frequency (MHz)

400 400028001600

aaa-002883

unadjusted sideband

suppression

(dBc)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002884

unadjusted sideband

suppression

(dBc)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002885

unadjusted sideband

suppression

(dBc)

(1)

(2)

(3)

(4)

LO frequency (MHz)

400 400028001600

aaa-002886

unadjusted sideband

suppression

(dBc)

(1)

(2)

(4)

(3)

Product data sheet Rev. 4 — 10 January 2013 23 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 33. Adjusted SBS versus flo and Tmb after nulling at 25 C

LO frequency (MHz)

495 409528951695

aaa-002887

100

unadjusted sideband

suppression

(dBc)

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 24 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the six following drawings: VCC =5V; T

mb =25C; LO = 0 dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.25 V (p-p) single-ended sine wave;

Vi(cm) = 0.5 V; broadband output match; unless otherwise specified.

Adjusted at 750 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Adjusted at 942.5 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 34. Adjusted CF versus flo and Tmb (750 LTE band) Fig 35. Adjusted CF versus flo and Tmb (GSM band)

LO frequency (MHz)

670 830790710 750

aaa-002951

-50

-70

-30

-10

adjusted carrier

feedthrough

(dBm)

-90

(1)

(2)

(3)

LO frequency (MHz)

860 1020980900 940

aaa-002952

-50

-70

-30

-10

adjusted carrier

feedthrough

(dBm)

-80

(1)

(2)

(3)

Adjusted at 1840 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Adjusted at 2140 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 36. Adjusted CF versus flo and Tmb (PCS band) Fig 37. Adjusted CF versus flo and Tmb (UMTS band)

LO frequency (MHz)

1880 204020001920 1960

aaa-002953

-50

-70

-30

-10

adjusted carrier

feedthrough

(dBm)

-80

(1)

(2)

(3)

LO frequency (MHz)

2060 222021802100 2140

aaa-002954

-50

-70

-30

-10

adjusted carrier

feedthrough

(dBm)

-90

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 25 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Adjusted at 2600 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Adjusted at 3500 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 38. Adjusted CF versus flo and Tmb (2.6 GHz LTE

band) Fig 39. Adjusted CF versus flo and Tmb (Wi MAX/LTE

band)

LO frequency (MHz)

2500 270026602580 26202540

aaa-002955

-50

-70

-30

-10

-90

adjusted carrier

feedthrough

(dBm)

(1)

(2)

(3)

LO frequency (MHz)

3400 360035603480 35203440

aaa-002956

-50

-70

-30

-10

-90

adjusted carrier

feedthrough

(dBm)

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 26 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the six following drawings: VCC =5V; T

mb =25C; LO = 0 dBm;

IQ frequency = 5 MHz; IQ amplitude = 0.25 V (p-p) single-ended sine wave;

Vi(cm) = 0.5 V; broadband output match; unless otherwise specified.

Adjusted at 750 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Adjusted at 942.5 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 40. Adjusted SBS versus flo and Tmb (750 LTE

band) Fig 41. Adjusted SBS versus flo and Tmb (GSM900

band)

LO frequency (MHz)

670 830790710 750

aaa-002957

adjusted sideband

suppression

(dB)

(1)

(2)

(3)

LO frequency (MHz)

860 1020980900 940

aaa-002958

adjusted sideband

suppression

(dB)

(1)

(2)

(3)

Adjusted at 1840 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Adjusted at 2140 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 42. Adjusted SBS versus flo and Tmb (PCS band) Fig 43. Adjusted SBS versus flo and Tmb (UMTS band)

LO frequency (MHz)

1880 204020001920 1960

aaa-002959

adjusted sideband

suppression

(dB)

(1)

(2)

(3)

LO frequency (MHz)

2060 2220 21802100 2140

aaa-002960

adjusted sideband

suppression

(dB)

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 27 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Adjusted at 2600 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Adjusted at 3500 MHz and after nulling Tmb at 25 C

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

Fig 44. Adjusted SBS versus flo and Tmb (2.6 GHz LTE

band) Fig 45. Adjusted SBS versus flo and Tmb (Wi MAX/LTE

band)

LO frequency (MHz)

2500 270026602580 26202540

aaa-002961

adjusted sideband

suppression

(dB)

(1)

(2)

(3)

LO frequency (MHz)

3400 360035603480 35203440

aaa-002962

adjusted sideband

suppression

(dB)

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 28 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the three following drawings: noise floor without baseband; VCC =5V;

Tmb =25C; Pi(lo) = 0 dBm; offset frequency = 20 MHz; input baseband ports termin ated

in 50 ; unless otherwise specified.

(1) Tmb =+25C.

(2) Tmb =40 C.

(3) Tmb =+85C.

(1) VCC =5 V.

(2) VCC = 4.75 V.

(3) VCC = 5.25 V.

Fig 46. Nflr(o) versus flo and Tmb Fig 47. Nflr(o) versus flo and VCC

(1) Pi(lo) =0dBm.

(2) Pi(lo) =9dBm.

(3) Pi(lo) =6dBm.

(4) Pi(lo) =+6dBm.

Fig 48. Nflr(o) versus flo and Pi(lo)

LO frequency (MHz)

400 400028001600

aaa-002888

-144

-174

-164

-154

output noise

floor

(dBm/Hz)

(2)

(1)

(3)

LO frequency (MHz)

400 400028001600

aaa-002889

-144

-174

-164

-154

output noise

floor

(dBm/Hz)

(1)

(2)

(3)

LO frequency (MHz)

400 400028001600

aaa-002890

-144

-174

-164

-154

output noise

floor

(dBm/Hz)

(1)

(2)

(3)

(4)

Product data sheet Rev. 4 — 10 January 2013 29 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the two following drawings: noise floor with baseband; VCC =5V;

Tmb =25C; Pi(lo) = 0 dBm; input baseband port s ter minated on short circuit to g round for

MODI_N, MODI_P and MODQ_N; DC signal on MODQ_P; unless otherwise specified.

(1) Pi(lo) =0dBm.

(2) Pi(lo) =3dBm.

(3) Pi(lo) =+3dBm.

(1) RF = 1840 MHz.

(2) RF = 942.5 MHz.

(3) RF = 2140 MHz.

Fig 49. Nflr(o) versus Po at fRF = 2140 MHz with 30 MHz

offset Fig 50. Nflr(o) versus Po at Pi(lo) =0dBm

RF output power (dBm)

-30 2010-10 0-20

aaa-002891

-156

-152

-148

-160

RFoutput noise floor

(dBm/Hz)

(1)

(2)

(3)

RF output power (dBm)

-30 2010-10 0-20

aaa-002892

-156

-152

-148

-160

RFoutput noise floor

(dBm/Hz)

(1)

(2)

(3)

Product data sheet Rev. 4 — 10 January 2013 30 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

Parameters for the following drawing: Tmb =25C; Pi(lo) = 0 dBm; two tones for IM3, IM5,

wanted and IP3o; tone 1: IQ frequency = 4.5 MHz and tone 2: IQ frequency = 5.5 MHz;

Vi(cm) = 0.5 V; for noise floor measurement see preceding conditions; noise floor

measurement has been integrated in 3.84 MHz bandwidth; unless otherwise specified.

14. Marking

15. Package information

The BGX7101 uses an HVQFN 24-pin package with underside heat spreader ground.

(1) Measured IP3o.

(2) Pout/Tone 1 dB step.

(3) Measured IM3.

(4) Trendline IM3.

(5) Noise floor in 3.84 MHz.

(6) Measured IM5.

(7) Trendline IM5.

Fig 51. IP3o, wanted, IM3, IM5 tone and noise floor

I/Q input level (dBfs)

aaa-002893 30

-110

-90

-70

-50

-30

-10

dBm

noise floor contribution no more negligeable

3 dB slope area

(2)

(1)

(7)

(6)

beginning of strong swing non linearity

BGX7101

frequency 2.14 GHz

Pout = -10 dBm

(5)

(3)

(4)

Table 14. Marking codes

Type number Marking code

BGX7101HN 7101

Product data sheet Rev. 4 — 10 January 2013 31 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

16. Package outline

Fig 52. Package outline SOT616-3 (HVQFN24)

0.51 0.2

A1Eh

UNIT ye

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 4.1

3.9

2.75

2.45

4.1

3.9 2.75

2.45

2.5

0.30

0.18

0.05

0.00 0.05 0.1

DIMENSIONS (mm are the original dimensions)

SOT616-3 MO-220 04-11-19

05-03-10

- - -- - -

0.5

0.3

0.1

0.05

0 2.5 5 mm

scale

SOT616-3

HVQFN24: plastic thermal enhanced very thin quad flat package; no leads;

24 terminals; body 4 x 4 x 0.85 mm

A(1)

max.

AA1c

detail X

y1C

712

24 19

terminal 1

index area

terminal 1

index area

1/2 e

E(1)

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

D(1)

Product data sheet Rev. 4 — 10 January 2013 32 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

17. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

17.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

17.2 Wave and reflow soldering

W ave soldering is a joinin g technology in which the joint s are made by solder coming from

a standing wave of liquid solder. The wave solder ing process is suit able for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circui t board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

•Board specifications, including the board finish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus SnPb soldering

17.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath specifications, including temperature and impurities

Product data sheet Rev. 4 — 10 January 2013 33 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

17.4 Reflow soldering

Key characteristics in reflow soldering are:

•Lead-free ve rsus SnPb soldering; note th at a lead-free reflow process usua lly leads to

higher minimum peak temperatures (see Figure 53) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enoug h for the solder to make reliable solder joint s (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classified in accordance with

Table 15 and 16

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reflow

soldering, see Figure 53.

Table 15. SnPb eutectic process (from J-STD-0 20C)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350  350

< 2.5 235 220

 2.5 220 220

Table 16. Lead-free pr ocess (from J-STD-020C)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

Product data sheet Rev. 4 — 10 January 2013 34 of 40

NXP Semiconductors BGX7101

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For further information on temperature profiles, refer to Application Note AN10365

“Surface mount reflow soldering description”.

18. Abbreviations

MSL: Moisture Sensitivity Level

Fig 53. Temperature profiles for large and small components

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 17. Abbreviations

Acronym Description

DAC Digital-to-Analog Converter

DC Direct Current

ESD ElectroStatic Discharge

FCDM Field-induced Charged-De vice Model

HBM Human Body Model

IF Intermediate Frequency

LO Local Oscillator

PCB Printed-Circuit Board

RF Radio Frequency

TDD T ime Division Duplex

Product data sheet Rev. 4 — 10 January 2013 35 of 40

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19. Revision history

Table 18. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGX7101 v.4 20130110 Product data sheet - BGX7101 v.3

Modifications: •Table 7: updated

•Table 8: updated

•Table 9: updated

•Table 10: updated

•Table 11: updated

•Table 12: updated

•Table 13: updated

BGX7101 v.3 20120903 Product data sheet - BGX7101 v.2

BGX7101 v.2 20120809 Product data sheet - BGX7101 v.1

BGX7101 v.1 20120425 Product data sheet - -

Product data sheet Rev. 4 — 10 January 2013 36 of 40

NXP Semiconductors BGX7101

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20. Legal information

20.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

20.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

20.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or envi ronmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expr essly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by cust omer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Pro duction This document contains the product specification.

Product data sheet Rev. 4 — 10 January 2013 37 of 40

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Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

20.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

21. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 4 — 10 January 2013 38 of 40

NXP Semiconductors BGX7101

Transmitter IQ modulator

22. Tables

Table 1. Ordering information . . . . . . . . . . . . . . . . . . . . .2

Table 2. Pin description . . . . . . . . . . . . . . . . . . . . . . . . . .3

Table 3. Shutdown control . . . . . . . . . . . . . . . . . . . . . . . .4

Table 4. Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . .5

Table 5. Thermal characteristics . . . . . . . . . . . . . . . . . . .6

Table 6. Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .6

Table 7. Characteristics at 750 MHz . . . . . . . . . . . . . . . .7

Table 8. Characteristics at 910 MHz . . . . . . . . . . . . . . . .7

Table 9. Characteristics at 1.840 GHz . . . . . . . . . . . . . . .8

Table 10. Characteristics at 1.960 GHz . . . . . . . . . . . . . . .9

Table 11. Characteristics at 2.140 GHz . . . . . . . . . . . . . . .9

Table 12. Characteristics at 2.650 GHz . . . . . . . . . . . . . .10

Table 13. Characteristics at 3.650 GHz . . . . . . . . . . . . . .11

Table 14. Marking codes . . . . . . . . . . . . . . . . . . . . . . . . .30

Table 15. SnPb eutectic process (from J-STD-020C) . . .33

Table 16. Lead-free process (from J-STD-020C) . . . . . .33

Table 17. Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . .3 4

Table 18. Revision history . . . . . . . . . . . . . . . . . . . . . . . .35

Product data sheet Rev. 4 — 10 January 2013 39 of 40

NXP Semiconductors BGX7101

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23. Figures

Fig 1. Functional block diagram. . . . . . . . . . . . . . . . . . . .2

Fig 2. Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . .3

Fig 3. LO input return loss variation (S11_LO). . . . . . . . .5

Fig 4. Typical wide band application diagram. . . . . . . . .12

Fig 5. Typical interface. . . . . . . . . . . . . . . . . . . . . . . . . .13

Fig 6. Current consumption versus flo and Tmb . . . . . . .14

Fig 7. Po versus flo and Tmb . . . . . . . . . . . . . . . . . . . . . .15

Fig 8. Po versus flo and VCC. . . . . . . . . . . . . . . . . . . . . .15

Fig 9. Po versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . . .15

Fig 10. Po versus flo and Vi(cm). . . . . . . . . . . . . . . . . . . . .15

Fig 11. Po versus baseband voltage at 2140 MHz. . . . . .16

Fig 12. PL(1dB) versus flo and Tmb. . . . . . . . . . . . . . . . . . .17

Fig 13. PL(1dB) versus flo and VCC . . . . . . . . . . . . . . . . . .17

Fig 14. PL(1dB) versus flo and Pi(lo) . . . . . . . . . . . . . . . . . .1 7

Fig 15. PL(1dB) versus flo and Vi(cm) . . . . . . . . . . . . . . . . .17

Fig 16. IP3o versus flo and Tmb . . . . . . . . . . . . . . . . . . . .18

Fig 17. IP3o versus flo and VCC . . . . . . . . . . . . . . . . . . . .18

Fig 18. IP3o versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . .18

Fig 19. IP3o versus flo and Vi(cm) . . . . . . . . . . . . . . . . . . .18

Fig 20. IP2o versus flo and Tmb . . . . . . . . . . . . . . . . . . . .19

Fig 21. IP2o versus flo and VCC . . . . . . . . . . . . . . . . . . . .19

Fig 22. IP2o versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . .19

Fig 23. IP2o versus flo and Vi(cm) . . . . . . . . . . . . . . . . . . .19

Fig 24. Unadjusted CF versus flo and Tmb . . . . . . . . . . . .20

Fig 25. Unadjusted CF versus flo and VCC. . . . . . . . . . . .20

Fig 26. Unadjusted CF versus flo and Pi(lo) . . . . . . . . . . .20

Fig 27. Unadjusted CF versus flo and Vi(cm). . . . . . . . . . .20

Fig 28. Adjusted CF versus flo and Tmb after

nulling at 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . .21

Fig 29. Unadjusted SBS versus flo and Tmb. . . . . . . . . . .22

Fig 30. Unadjusted SBS versus flo and VCC . . . . . . . . . .22

Fig 31. Unadjusted SBS versus flo and Pi(lo) . . . . . . . . . .22

Fig 32. Unadjusted SBS versus flo and Vi(cm) . . . . . . . . .22

Fig 33. Adjusted SBS versus flo and Tmb after

nulling at 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . .23

Fig 34. Adjusted CF versus flo and Tmb

(750 LTE band) . . . . . . . . . . . . . . . . . . . . . . . . . .24

Fig 35. Adjusted CF versus flo and Tmb

(GSM band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Fig 36. Adjusted CF versus flo and Tmb

(PCS band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Fig 37. Adjusted CF versus flo and Tmb

(UMTS band). . . . . . . . . . . . . . . . . . . . . . . . . . . .24

Fig 38. Adjusted CF versus flo and Tmb

(2.6 GHz LTE band). . . . . . . . . . . . . . . . . . . . . . .25

Fig 39. Adjusted CF versus flo and Tmb

(Wi MAX/LTE band). . . . . . . . . . . . . . . . . . . . . . .25

Fig 40. Adjusted SBS versus flo and Tmb

(750 LTE band) . . . . . . . . . . . . . . . . . . . . . . . . . .26

Fig 41. Adjusted SBS versus flo and Tmb

(GSM900 band). . . . . . . . . . . . . . . . . . . . . . . . . .26

Fig 42. Adjusted SBS versus flo and Tmb

(PCS band) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26

Fig 43. Adjusted SBS versus flo and Tmb

(UMTS band). . . . . . . . . . . . . . . . . . . . . . . . . . . .26

Fig 44. Adjusted SBS versus flo and Tmb

(2.6 GHz LTE band) . . . . . . . . . . . . . . . . . . . . . . 27

Fig 45. Adjusted SBS versus flo and Tmb

(Wi MAX/LTE band). . . . . . . . . . . . . . . . . . . . . . . 27

Fig 46. Nflr(o) versus flo and Tmb . . . . . . . . . . . . . . . . . . . 28

Fig 47. Nflr(o) versus flo and VCC . . . . . . . . . . . . . . . . . . . 28

Fig 48. Nflr(o) versus flo and Pi(lo) . . . . . . . . . . . . . . . . . . . 28

Fig 49. Nflr(o) versus Po at fRF = 2140 MHz with

30 MHz offset . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Fig 50. Nflr(o) versus Po at Pi(lo) = 0 dBm. . . . . . . . . . . . . 29

Fig 51. IP3o, wanted, IM3, IM5 tone and noise floor. . . . 30

Fig 52. Package outline SOT616-3 (HVQFN24). . . . . . . 31

Fig 53. Temperature profiles for large and small

components. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

NXP Semiconductors BGX7101

Transmitter IQ modulator

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 January 2013

Document identifier: BGX 7101

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

24. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Device family . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Functional description . . . . . . . . . . . . . . . . . . . 4

8.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

8.2 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 4

9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Thermal characteristics . . . . . . . . . . . . . . . . . . 6

11 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

12 Application information. . . . . . . . . . . . . . . . . . 12

12.1 External DAC interfacing . . . . . . . . . . . . . . . . 12

12.2 RF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Test information. . . . . . . . . . . . . . . . . . . . . . . . 14

14 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

15 Package information . . . . . . . . . . . . . . . . . . . . 30

16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 31

17 Soldering of SMD packages . . . . . . . . . . . . . . 32

17.1 Introduction to soldering. . . . . . . . . . . . . . . . . 32

17.2 Wave and reflow soldering . . . . . . . . . . . . . . . 32

17.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 32

17.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 33

18 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 34

19 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 35

20 Legal information. . . . . . . . . . . . . . . . . . . . . . . 36

20.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 36

20.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

20.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 36

20.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 37

21 Contact information. . . . . . . . . . . . . . . . . . . . . 37

22 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

23 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

24 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

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