©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4597, REV. B
HERMETIC SCHOTTKY RECTIFIER
Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form (Single)
30
A
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form (Common Cathode)
60
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(per leg)
570
A
Non-Repetitive Avalanche Energy
EAS
TJ = 25 C, IAS = 3.0 A,
L = 4.4 mH (per leg)
20
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
3.0
A
Maximum Thermal Resistance
RJC
DC operation
7.07
C/W
Max. Junction Temperature
TJ
-
-65 to +200
C
Max. Storage Temperature
Tstg
-
-65 to +200
C
Electrical Characteristics
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 30A, Pulse, TJ = 25 C
0.92
V
(per leg)
VF2
@ 30A, Pulse, TJ = 125 C
0.76
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 C
0.2
mA
(per leg)
IR2
@VR = 200V, Pulse,
TJ = 125 C
2.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
600
pF
SHD118436
SHD118436A
SHD118436B
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
TECHNICAL DATA
DATA SHEET 4597, REV. B
MECHANICAL DIMENSIONS: In Inches / mm
1 2 3
PINOUT TABLE
DEVICE TYPE
PIN 1
PIN 2
PIN 3
DUAL RECTIFIER, COMMON CATHODE (P)
COMMON CATHODE
ANODE
ANODE
Note: The Vf curves shown are for the SD175SCU200 unpackaged die only.
SHD118436
SHD118436A
SHD118436B
2
3
.370±.010
(9.40±.254)
.610±.010
(15.5±.254)
.125±.010
(3.17±.254)
.110 (2.79) Max
Alumina Ring
.510±.020
(12.9±.508)
.320±.010
(8.13±.254)
.030±.010
(.762±.254)
Moly Lid
Moly Base
Terminal 1
.060±.010
(1.52±.254)
.020±.002
(.508±.051)
.020±.005 R
(.508±.127 )
2
3
.370±.010
(9.40±.254)
.610±.010
(15.5±.254)
.090±.010
(2.29±.254)
.130 (3.30) Max
Alumina Ring
.520±.020
(13.2±.508)
.320±.010
(8.13 ±.254)
.030±.010
(.762±.254)
Moly Lid
Moly Base
Terminal 1
.060±.010
(1.52±.254)
.015±.002
(.381±.051)
.020±.005 R
(.508±.127 )
Copper Terminals
.370±.010
(9.40±.254)
2
3
.610±.010
(15.5±.254)
.030±.010
(.762±.254)
.110 (2.80) Max
Alumina Ring
Terminal 1
SHD-5
SHD-5A
SHD-5B
SHD-5A
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V
F (V)
10
-2
10
-1
10
0
10
1
Instantaneous Forward Current - I F (A)
Typical Forward Characteristics
125 °C
200 °C
175 °C
25 °C
040 80 120 160 200 240
Reverse Voltage - V
R (V)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Instantaneous Reverse Current - I R (mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
200 °C
175 °C
040 80 120 160 20 0 240
Reverse Voltage - V
R (V)
0
150
300
450
600
Junction Capacitance - CT (pF)
Typical Junction Capacitance
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com
TECHNICAL DATA
DATA SHEET 4597, REV. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
SHD118436
SHD118436A
SHD118436B
