COMPLEMENTARY The 2N3773 SILICON and 2N6609 signed for high power audio, POWER TRANSISTORS are EPI-BASE A power transistors disk head positioners and other de- linear applications, These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters, I +1 ,' c B ,~=~+ r E ~: * MAXIMUM RATINGS ..~ I Collector Emitter Voltage Collector-Emitter Voltaget;4* Collector-Base Emitter-Base Collector `":$: ,. ,,.:<,,4. . ,. Voltage $, %:~,,~?' ..... ....>\.~:.t, ~ Voltaq~+Ia,fi Currenr"*~~tinuous .,.$v:~-%ak Base Curre#~ - Symbol I Value Opefiting THERMAL Vdc VCEX 160 Vdc VCBO 160 Vdc VEBO 7 Vdc 16 Adc Ic $~;tinUOUS IB pD @ Tc = 25C Ranqe 4 15 Adc 150 Watts 0.855 Wloc `c I TJ r Tstg I Symbol Max Unit ROJC 1.17 Oclw -65 to +200 I Junction [ H 4 to Case I 1 CHARACTERISTICS Resistance, DIA. Q 30 Characteristic Thermal Unit 140 (1) and Storage Junction Temperature I VPFO .,t*!]\ ,4,s .. `X:**+$?ea ~ (I ] To~l `p~=er~issipation `:~~ti--abo"e *50C d F J :$r~>s;~x{> Rating K' D SEATING PLANE . \ r. [ R .,. ,.,;: .. ,' ,, ,1 .,, : ELECTRICAL CHARACTERISTICS I (Tc = 25C unless otherwise Characteristic OFF CHARACTERISTICS Collector-Emitter (IC `0.2 I Sustaining Voltage 140 -- VCEX(su~) 160 -- VCER(~u~} 150 0,2 Sustaining Voltage Adc, RBE = 100 Ohms) Cutoff Current !cEX (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, Tc = 150C) Current (VCB = 140 Vdc, Cutoff IcBO IE = O) .\.i~' ,..+ ,, ".:f?~~~ Q /,.\ ,. ~.~ ~~~ :,.,* ..'. .:.,, ,,,. *?F~ ,:\:l)'" 2 -,,. . . ..,,,,, "\.-$,'b. :.,,K,y _.:\,, 10 *L,\ .,....' ,, ~*:j_ 2 .~:x<,>,~.. 1,,: `.~:~;\. ,:\:,,. ,:-~~!..,y, Current 5 (VBE = 7 Vdc, IC "O) ON CHARACTERISTICS (1) ,. DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE `4 Collector-Emitter Vdc) Saturation (lC=16Adc, Voltag6 = 4 Vdc) DYNAMIC CHARACTERISTICS Magnitude of Common-Emitter Small-Signal, (lC=l Short-Circuit, Forward A, f=50kHz) *Small-Signal Current Gain (lC=l Adc, VCE=4Vdc, WITCHING ,$'? .~!:.,\ ` `k;, *$), `~ $$$:ps ,*,k:, .3!&,,:+` i:>+ lB=3.2Adc) On Voltage (IC = B AdC,'VCE CHARACTER mAdc mAdc mAdc .* ~ 8 Adc, IB = 800 mAdc) *Base-Emitter mAdc -- = 1.5 Vdc Cutoff .** , t*\ icEO (VCE = 140 Vdc, VBE(off) *{Ic'= Max = 1.5 Vdc, RBE = 100 Ohms) *Collector Cutoff Current (VCE = 120 Vdc, IB =0) *Emittar VCEO(sus) I Adc, tB `O) `: Collector-Emitter Collector Min ,<.>:,+" t, . -**$,~.\ Voltaga (Ic = 0.1 Adc, VBE(off) *Collector SVmbol (1) Breakdown *Collector-Emitter (Ic = noted.) i:'!> .'..!. .**,*,,l>!~ ,,.$%; ~~+ Curregt~~~~~& Ratio `,?.s \ ` .*, ,-,, $.,,,.-~' -..;,. .' .,*,4$. -S\ ;$j ,,, !.~, "..$ ,',,, ...!}.,. \..,$. ..,,{$;: >J,!{>rt VCE(~at) t? ..$'+ 15 Vdc -- 1.4 4 VBE(on) I hfe I 60 5 2.2 4 -- 1.5 -- Vdc f=lk ISTICSJ$' Second Breakdown Collector ~g~y~~~}h Base Forward t = 1 s (non-repetitive), V~&fF 1,$0 V, See Figure 12 Biased lsib Adc I FIGURE 300 1 - DC CURRENT GAIN 1 1500C 200 .250c FIGURE 2- 1 1 DC CURRENT GAIN 300 - 200 7 " 1 h U.1 1.U Z.u Ic, COLLECTOR I FIGURE 3 - COLLECTOR 3.U 5.U CURRENT (AMPSt SATURATION /.u lU 1 I 1 I 1 1 D\t 7.0 . . Zu i 111111 1 1 1 I I I I I I I I I I I I 1 1 1 I 1 1 REGION z ~ i 0 u ~ >- >U 0.4 I 1 Tc = 25C , I I 11 o 0.050.07 0.1 0.2 0.5 0.3 0,7 [B, BASE CURRENT FIGURE 2. 6- "ON" 1.0 2,0 3.0 5.0 (AMPSt VOLTAGE 2.0 / // r 1. / j ,1 lR I Ic, COLLECTOR L@ CURRENT (AMPS) MQTOROLA ! ! ! ! ! ! I I tc, COLLECTOR Semiconductor Products I I CURRENT Inc. I I (AMPSt VI 111/ , II I FIGURE 7 - TURN-ON TIMES : 0.2 I 1 1 1 I 1 I I I -I 2N3773, SWITCHING F!GURE 2N6609 8 - TURN-OFF TIMES I 1 I I 1 I 1 I 1 I I I l-h+ Y 1 I % - I - 1 1 I 1 1 1 1 - 2N3773, SWITCHING 2N6609 F -' 0.1 0,07 0,05 I 0.03 0.02 I I I I Ill Llll 0.1 I -. 0.2 0.3 0.5 0.7 1.0 2.0 Ic, COLLECTOR FIGURE 9 - CURRENT CURRENT-GAIN PRODUCT 3.0 - 2N3773, 5.0 7,0 10 ,,' 0.07 0.05 0.2 20 0.3 5,0 7.0 10 20 (AMPS) - BANDWIDTH 2N6609 VR, REVERSE VOLTAGE Tl 1 I 1 I 1111 w I I 1 1 1 1 1 OUTY CYCLE, O = tl/t2 n p(;k) I n I - ,. I, -b,"" ("!.. I ,,1 0 CURVES APPLY FOIR POWER PULSE TRAIN SHOWN I 1< --REAOTIMEATtl ,* --TJ(pk) - T: = :!~k)le;l I "!-- ,,J~ (VOLTS) II I I u u u . ..-. 0.02 0,05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 t, TIME (ins) I : ",,,!. .,. 1,,. ,, `,$, FIGURE 30, 1 ) 12 ~ - FORWARD 1r BIAS SAFE - OPERATING \ 1 r+!-_ `},1, `There transistor: are two average junction Safe operating sister that limitations on the powerhandling temperature area curves indicate sister must not be subjected to greater dissipation $ 60 <- . @ MOTOROLA Figure 12 is based on TJ(pk) = 200C; on conditions. Second breakdown \ I I Tut:""., 1 Tc is variable pulse limits are valid fo$. d~$y cycles to 10% provided TJ(Pk) < 200C. At high case i.e., tha tran - ,+$ temperatures, thermal limitations will reduce the power that can * ..>.,.,:$$:. than the curv~ `~.ii be handled to values less than the limitations imposad bv second `i$\ \ ,~?:) l;..s,: $+?,. breakdown (see AN-41 5A). I 201 dep'MhQ limits of the tran-- operation: indicate, 6 I I lous r-- s' iii. \.J," !* ~:~~$k~-~of of a and second breakdown. Ic - VCE must be observed for reliable ability AREA 1 1 I I x I Semiconductor I I I I I I I I I I I ~ I I Products jnc.