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PTB 20235
70 Watts, 2.1–2.2 GHz
Wideband CDMA Power Transistor
Package 20225 *
20235
LOT CODE
0
20
40
60
80
100
120
048121620
Input Power (Watts)
Output Power (Watts)
VCC = 26 V
ICQ = 150 mA Total
f = 2.2 GH z
Typical Output Pow er vs. Input Power
Description
The 20235 is a class AB, NPN, push-pull RF power transistor intended
for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in Wide CDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
70 Watts, 2.1–2.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 55 Vdc
Collector-Base Voltage VCBO 55 Vdc
Emitter-Base Voltage (collector open) VEBO 3.5 Vdc
Collector Current (continuous) IC12 Adc
Total Device Dissipation at Tflange = 25°C PD320 Watts
Above 25°C derate by 1.83 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 0.547 °C/W
* This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation.
9/28/98
PTB 20235
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 20 mA V(BR)CES 55 — — Volts
Breakdown Voltage E to B IC = 0 A, IE = 20 mA V(BR)EBO 3.5 4.0 — Volts
DC Current Gain VCE = 10 V, IC = 1.5 A hFE 30 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 26 Vdc, POUT = 15 W, ICQ = 150 mA, f = 2.2 GHz) Gpe 7.5 8.0 — dB
Gain Compression
(VCC = 26 Vdc, ICQ = 150 mA, f = 2.2 GHz) P-1dB 70 — — Watts
Collector Efficiency
(VCC = 26 Vdc, POUT = 70 W, ICQ = 150 mA, f = 2.2 GHz) ηC—40—%
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 70 W(PEP), ICQ = 150 mA, f = 2.2 GHz Ψ— — 5:1 —
—at all phase angles)
Typical Performance
5
6
7
8
9
10
2050 2100 2150 2200 2250
Frequency (MHz)
Gain
20
40
60
80
100
120
Output Power & Efficiency
VCC = 26 V
ICQ = 150 mA Total
POUT, G ain & Efficiency (a t P-1dB) vs. Frequency
Output Powe r (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
0
2
4
6
8
10
2100 2120 2140 2160 2180 2200
Frequency (MHz)
Gain
0
10
20
30
40
50
60
VCC = 26 V
ICQ = 150 mA Total
POUT = 70 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
EfficiencyReturn Los
s
-5
-15
-25
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PTB 20235
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Output Pow er vs. Supply Volt age
60
70
80
90
100
110
22 23 24 25 26 27
Supply Voltage (Volts)
Output Power (Watts)
ICQ = 150 mA Total
f = 2.2 GH z
Power Gain vs. Out put Power
6
7
8
9
10
1 10 100
Output Power (Watts)
Power Gain (d B)
VCC = 26 V
f = 2.2 GH z
ICQ = 150 m A Total ICQ = 75 mA Total
ICQ = 38 mA Total
Int ermodulat ion Dist ortion vs. O utput Power
-50
-45
-40
-35
-30
-25
-20
10 20 30 40 50 60 70 80
Output Power (Watts-PEP)
IMD (dBc)
VCC = 26 V
ICQ = 150 mA
f1 = 2.200 GHz
f2 = 2.199 GHz
Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
2.05 6.18 -6.7 6.4 -5.8
2.10 7.58 -6.9 5.9 -5.0
2.15 8.76 -6.2 5.5 -4.1
2.20 9.16 -4.8 5.0 -3.0
2.25 7.96 -3.6 4.8 -2.6
Impedance Data
VCC = 26 Vdc, POUT = 70 W, ICQ = 150 mA
8/19/97
PTB 20235
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Placement Diagram (not to scale)
Test Circuit
Block Diagram for f = 2 GHz
Q1 PTB 20235 NPN RF Transistor
l1, l2, l21, l22 0.25λ 2GHz Microstrip 50 Ω
l3, l4 0.085λ 2GHz Microstrip 80 Ω
l5, l6 0.067λ 2GHz Microstrip 20 Ω
l7, l8, l11, l12 0.0217λ 2GHz Microstrip 11.7 Ω
l9, l10 0.053λ 2GHz Microstrip 8.15 Ω
l13, l14 0.055λ 2GHz Microstrip 6.7 Ω
l15, l16 0.052λ 2GHz Microstrip 11.45 Ω
l17, l18 0.060λ 2GHz Microstrip 16.9 Ω
l19, l20 0.160λ 2GHz Microstrip 75 Ω
Q1
L1, L2 6.8 nh SMT Inductor
L3, L4 56 nh SMT Inductor
L5, L6 4 mm. SMT Ferrite
C1, C2 0–4 pF Johanson Piston Trimmer
C3-8, C17, C18 20 pF (B ATC 100)
C9, C11, C13, C15 0.1 µF 1206
C10, C12, C14, C16 10 µF SMT Tantalum
R1, R2 10 Ω SMT
T1, T2 UT 70-50
Board 0.031” G200, Solid Copper
Bottom, AlliedSignal
9/10/97
PTB 20235
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Artwork (1 inch )
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
L3
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20235 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
9/28/98