Central . CZT31C NPN CZT32C PNP Semiconductor Corp. 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. SOT-223 CASE MAXIMUM RATINGS: (T,=25C) SYMBOL UNITS Collector-Base Voltage VcBo 100 Vv Collector-Emitter Voltage VcEO 100 Vv Emitter-Base Voltage VEBO 5.0 Vv Collector Current lo 3.0 A Peak Collector Current lom 6.0 A Base Current IB 1.0 A Power Dissipation Pp 2.0 Ww Operating and Storage Junction Temperature TJ: T stg -65 to +150 C Thermal Resistance ~ BJA 62.5 oC ELECTRICAL CHARACTERISTICS: (T,=25C unless otherwise noted) _ SYMBOL ICES ICEO lEBO BVCEO * VCE(SAT) * VBE(ON) *hFE *HFE fT * Pulsed, 2%D.C. TEST CONDITIONS VoE=100V VcE=60V VeEB=s.0V Ic=30mA I=3.0A, Ip=375mMA VcE=4.0V, Io=3.0A VoeE=4.0V, Ic=1.0A VcE=4.0V, Io=3.0A VoE=10V, Ic=500mA, f=1.0MHz 382 MIN MAX UNITS 200 pA 300 pA 1.0 mA 100 Vv 1.2 V 1.8 V 25 10 100 3.0 MHzAll dimensions in inches (mm). .248(6.30) over -264(6.71) OTT 78) aaa 4 1190(3.30) .146(3.71) 1s | 1 2 | 3 .009(0.23) OTECO-S8) al oe -091(2.31) ~024(0.61) -031(0.79) - 1814.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR 383 ~264(6.71) -287{ 7.29) DATA SHEET R1