9550 ,) 9 $ 'LRGH'LH 6/;+ 'LHVL]H[PP Doc. No. 5SYA1651-02 Aug 02 )DVW5HFRYHU\/RZORVVHV 6RIWUHYHUVHUHFRYHU\ +LJKUXJJHGQHVV 0D[LPXP5DWHG9DOXHV 3DUDPHWHU Maximum Reverse Voltage (Tj = 25C, unless specified otherwise) 6\PERO &RQGLWLRQV 9DOXHV 8QLW VRRM 1200 V DC Forward Current IF 100 A Maximum Forward Current IFM 200 A Operating Temperature Tj -40 .. +150 C &KDUDFWHULVWLF9DOXHV 3DUDPHWHU Forward Voltage Reverse leakage current Limited by Tjmax (Tj = 25C, unless specified otherwise) 6\PERO VF IR &RQGLWLRQV IF = 100 A VR = 1200 V PLQ W\S PD[ 8QLW Tj = 25 C 1.7 1.9 Tj = 125 C 1.9 Tj = 25 C Tj = 125 C 2.3 V V 100 A 1.2 mA Reverse recovery current Irrm IF = 100 A, VCC = 600 V, 70 A Reverse recovery charge Qrr di/dt = 1600 A/s, L = 50 nH, 18 C Reverse recovery time trr Tj = 125 C, Inductive load, 400 ns Switch : 5SMX12L1251 6.5 mJ Reverse recovery energy Erec $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH 6/;+ 0HFKDQLFDO&KDUDFWHULVWLFV 3DUDPHWHU 8QLW 9.24 x 9.24 mm Exposed LxW Front metal 7.6 x 7.6 mm Thickness 325 15 m AISi1 4.2 m AI / Ti / Ni / Ag 1.2 m Overall die Dimensions Metallization 1) Front Back 1) LxW For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH'UDZLQJ 1RWH$OOGLPHQVLRQVDUHVKRZQLQPP $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1651-02 Aug 02