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Doc. No. 5SYA1651-02 Aug 02
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Maximum Reverse Voltage VRRM 1200 V
DC Forward Current IF100 A
Maximum Forward Current IFM Limited by Tjmax 200 A
Operating Temperature Tj-40 .. +150 °C
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Tj = 25 °C 1.7 1.9 2.3 V
Forward Voltage VFIF = 100 A Tj = 125 °C 1.9 V
Tj = 25 °C 100 µAReverse leakage current IRVR = 1200 V Tj = 125 °C 1.2 mA
Reverse recovery current Irrm 70 A
Reverse recovery charge Qrr 18 µC
Reverse recovery time trr 400 ns
Reverse recovery energy Erec
IF = 100 A, VCC = 600 V,
di/dt = 1600 A/µs, Lσ = 50 nH,
Tj = 125 °C, Inductive load,
Switch : 5SMX12L1251 6.5 mJ
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Overall die L x W 9.24 x 9.24 mm
Exposed
Front metal L x W7.6 x 7.6 mm
Dimensions
Thickness 325 ± 15 µm
Front AISi1 4.2 µm
Metallization Back1) AI / Ti / Ni / A g 1.2 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02.
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Fabri kstra sse 3
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Telephone+41 (0)58 586 1419
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