DS30275 Rev. 2 - 2 1 of 2 BC857AT, BT, CT
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
Type Marking
BC857AT 3V
BC857BT 3W
BC857CT 3G
Maximum Ratings @ TA= 25°C unless otherwise specified
Features
·Epitaxial Die Construction
·Complementary NPN Types Available
(BC847AT, BT, CT)
·Ultra-Small Surface Mount Package
Mechanical Data
·Case: SOT-523, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 perJ-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Weight: 0.002 grams (approx.)
·Marking Codes (See Table Below & Diagrams
on Page 2)
·Ordering & Date Code Information: See Page 2
NEW PRODUCT
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
A
M
JL
D
BC
H
K
G
TOP VIEW
C
E
B
a
DS30275 Rev. 2 - 2 2 of 2 BC857AT, BT, CT
Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 2) V(BR)CBO -50 — — V IC= 10mA, IB= 0
Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -45 — — V IC= 10mA, IB= 0
Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO -5 — — V IE= 1mA, IC= 0
DC Current Gain (Note 2) Current Gain A
B
C
hFE
125
220
420
—
290
520
250
475
800
—VCE = -5.0V, IC= -2.0mA
Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) ——
—
-300
-650 mV IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5.0mA
Base-Emitter Saturation Voltage (Note 2) VBE(SAT) —
—
-700
-900
—
—mV IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5.0mA
Base-Emitter Voltage (Note 2) VBE(ON) -600
—
—
—
-750
-820 mV VCE = -5.0V, IC= -2.0mA
VCE = -5.0V, IC= -10mA
Collector-Cutoff Current (Note 2) ICBO
—
—
—
—
-15
-4.0
NA
µA
VCB = -30V
VCB = -30V, TA= 150°C
Gain Bandwidth Product fT100 — — MHz VCE = -5.0V, IC= -10mA,
f = 100MHz
Output Capacitance COB —— 4.5pF
VCB = -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
IC= -0.2mA, VCE = -5.0Vdc,
RS= 2.0KW, f = 1.0KHz,
BW = 200Hz
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details: go to ourwebsite at http://www.diodes.com/datasheets/ap02007.pdf.
@ TA= 25°C unless otherwise specified
NEW PRODUCT
Ordering Information (Note 3)
Device Packaging Shipping
BC857AT-7 SOT-523 3000/Tape & Reel
BC857BT-7 SOT-523 3000/Tape & Reel
BC857CT-7 SOT-523 3000/Tape & Reel
XXYM
Marking Information
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
