193
18
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
15 20
41 50
R
θJC
2.1 3
T
A
=70°C 2.1Power Dissipation
A
T
A
=25°C P
DSM
3
45
A
mJ
W
Junction and Storage Temperature Range
A
P
D
°C
50
25
-55 to 175
T
C
=100°C
Avalanche Current
C
30
I
D
50
40
150Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
T
C
=25°C
T
C
=100°C
Repetitive avalanche energy L=0.1mH
C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 25
Maximum UnitsParameter
t ≤ 10s R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
W
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
AOD456
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 25V
I
D
= 50A (V
GS
= 10V)
R
DS(ON)
<6 mΩ (V
GS
= 10V)
R
DS(ON)
<10 mΩ (V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
General Description
The AOD456 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
G
D
S
G
D-PAK
Top View
S
Bottom View
D
G
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD456
Symbol Min Typ Max Units
BV
DSS
25 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1 1.74 3 V
I
D(ON)
100 A
5 6
T
J
=125°C 7.3
8 10
g
FS
45 S
V
SD
0.74 1 V
I
S
50 A
C
iss
1850 2220 pF
C
oss
472 pF
C
rss
275 pF
R
g
0.86 1.5 Ω
Q
g
(10V) 31.7 38 nC
Q
g
(4.5V) 15.7 19 nC
Q
gs
5.8 nC
Q
gd
8.2 nC
t
D(on)
7.5 ns
t
r
14 ns
t
D(off)
30 ns
t
f
11.5 ns
t
rr
30.9 37 ns
Q
rr
20.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=12.5V,
R
L
=0.625Ω, R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=12.5V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
Forward Transconductance
Diode Forward Voltage
Static Drain-Source On-Resistance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
R
DS(ON)
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
,
I
D
=250µA
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250uA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/µs
V
GS
=0V, V
DS
=12.5V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev4: Spe 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.63
494 593
692 830
193
18
59
142
0
10
20
30
40
50
60
12345
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
2
4
6
8
10
0 10 20 30 40 50 60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
V
GS
=10V, 20A
V
GS
=4.5V, 20A
4
6
8
10
12
3 4 5 6 7 8 9 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=10V
I
D
=20A
25°C
125°C
0
20
40
60
80
100
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3.5
5V
4.0V
10V
6V
4.5V
V
GS
=4.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.63
494 593
692 830
193
18
59
142
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=12.5V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
0.1
1
10
100
1000
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10µs
100µs
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C, T
C
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.63
494 593
692 830
193
18
59
142
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
20
30
40
50
60
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A), Peak Avalanche Current
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating I
D
(A)
DD
D
A
VBV
IL
t−
⋅
=
T
A
=25°C
0
10
20
30
40
50
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD456
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Alpha & Omega Semiconductor, Ltd. www.aosmd.com