AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD456 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 m (VGS = 10V) RDS(ON) <10 m (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 193 18 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G G S G S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Avalanche Current C C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A C TA=25C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V 40 IDM 150 A IAR 30 A EAR 45 mJ 50 3 W 2.1 TJ, TSTG -55 to 175 Symbol t 10s Steady-State Steady-State W 25 PDSM TA=70C Maximum Junction-to-Case B 20 ID PD TC=100C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 50 TC=100C Pulsed Drain Current Maximum 25 RJA RJC Typ 15 41 2.1 C Max 20 50 3 Units C/W C/W C/W www.aosmd.com AOD456 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A ID(ON) On state drain current VGS=10V, VDS=5V Static Drain-Source On-Resistance Typ V TJ=55C 1 100 nA 1.74 3 V 5 6 100 VGS=10V, ID=30A TJ=125C A 7.3 8 Forward Transconductance VDS=5V, ID=20A 45 VSD Diode Forward Voltage IS=1A, VGS=0V 0.74 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 gFS Output Capacitance Units 1 VGS=4.5V, ID=20A Coss Max 25 VDS=20V, VGS=0V IDSS RDS(ON) Min Conditions 1850 VGS=0V, VDS=12.5V, f=1MHz m 10 S 1 V 50 A 2220 pF 472 pF 275 pF 0.86 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 31.7 38 nC Qg(4.5V) Total Gate Charge 15.7 19 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A VGS=10V, VDS=12.5V, RL=0.625, RGEN=3 5.8 nC 8.2 nC 7.5 ns 14 ns 30 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 30.9 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 20.3 11.5 ns 37 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev4: Spe 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 6V 80 50 5V VDS=5V 40 60 4.0V ID(A) ID (A) 4.5V 40 30 125C 20 VGS=3.5 20 25C 494 692 10 0 593 830 0 0 1 2 3 4 5 1 2 3 10 5 193 18 Normalized On-Resistance 1.8 8 VGS=4.5V 6 VGS=10V 4 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (m ) 4.63 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1 2 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 59 100 142 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 12 10 ID=20A 125C 10 1 IS (A) RDS(ON) (m ) 25 8 0.1 0.01 125C 25C 0.001 6 0.0001 25C 0.00001 4 0.0 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=12.5V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2000 1500 4.63 Coss 1000 494 692 500 593 830 Crss 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 100s DC Power (W) ID (Amps) 160 10s RDS(ON) limited 1ms 1 TJ(Max)=175C TC=25C 120 80 40 0 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 0.0001 0.001 0.01 59 0.1 142 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z JC Normalized Transient Thermal Resistance 25 200 TJ(Max)=175C, TC=25C 10 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 193 18 1000 100 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 tA = 50 L ID BV - VDD Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 30 20 TA=25C 10 0.000001 50 40 30 4.63 20 494 692 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 T CASE (C) Figure 13: Power De-rating (Note B) 175 193 18 60 50 50 40 40 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 TA=25C 30 20 20 10 10 0 0 0 25 50 75 100 125 150 0.01 175 TCASE (C) Figure 14: Current De-rating (Note B) 10 Z JA Normalized Transient Thermal Resistance 593 830 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W Single Pulse 0.0001 0.001 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD456 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com