feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS (E9087) 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 ... 5 1.8 1.4 5.08 mm spacing BPW 34 F Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GEO06643 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Speziell geeignet fur Anwendungen bei 950 nm kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BPW 34 FS/(E9087); geeignet fur Vapor-Phase Loten und IR-Reflow Loten Features Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Anwendungen Applications IR remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment Photointerrupters IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Geratefernsteuerungen Lichtschranken fur Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1998-08-27 1.1 0.9 6.7 6.2 0...5 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position feo06861 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.8 0.2 0...0.1 GEO06863 1.1 0.9 6.7 6.2 0...5 0.3 1.2 1.1 Chip position Cathode lead 0.2 0.1 Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS 1.7 1.5 BPW 34 FAS (E9087) Photosensitive area 2.65 mm x 2.65 mm feo06916 4.0 3.7 0.9 0.7 4.5 4.3 1.8 0.2 Cathode lead GEO06916 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code BPW 34 F Q62702-P929 BPW 34 FS Q62702-P1604 BPW 34 FS (E9087) Q62702-P1826 Semiconductor Group 2 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 S 50 ( 40) A Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 950 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax 780 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.65 x 2.65 mm x mm Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity S 0.59 A/W Quantenausbeute Quantum yield 0.77 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 330 ( 275) mV Semiconductor Group 3 LxW 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Kennwerte (TA = 25 C, = 950 nm) Characteristics (cont'd) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 25 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 20 ns Durchlaspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 4.3 x 10- 14 W Hz Nachweisgrenze, VR = 10 V Detection limit D* 6.2 x 1012 cm * Hz W Semiconductor Group 4 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) OHF00368 100 OHF01097 A 10 4 mV 160 mW Ptot 140 10 2 10 3 120 10 3 P S rel % Total power dissipation Ptot = f (TA) OHF00958 80 VO 100 60 10 1 10 2 P 40 80 60 10 0 10 1 40 20 20 0 700 800 900 1000 nm 10 -1 0 10 1200 10 2 W/cm 2 10 10 4 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 0 0 20 40 60 Ee Dark current IR = f (VR), E = 0 R 10 1 0 Dark current IR = f (TA), VR = 10 V, E = 0 OHF00081 100 C pA 80 C 100 TA OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 5 100 120 1998-08-27