Semiconductor Group 1 1998-08-27
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter
NEW: in SMT and as Reverse Gullwing
BPW 34 F
BPW 34 FS
BPW 34 FS (E9087)
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
GEO06643
4.0
3.7 4.3
4.5
5.4
4.9
0.6
0.4
0.6
0.4
1.2
0.7
0.3
0.5
0.8
0.6
Cathode marking
0.6
0.8
1.9
2.2
3.0
3.5
0.6
0.4
Chip position
0.4
0.6
0.35
0.2
0 ... 5˚
5.08 mm
spacing
Approx. weight 0.1 g
1.4
Photosensitive area
2.65 mm x 2.65 mm
1.8
feo06075
BPW 34 F
Wesentliche Merkmale
●Speziell geeignet für Anwendungen
bei 950 nm
●kurze Schaltzeit (typ. 20 ns)
●DIL-Plastikbauform mit hoher
Packungsdichte
●BPW 34 FS/(E9087); geeignet für
Vapor-Phase Löten und IR-Reflow Löten
Anwendungen
●IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerungen
●Lichtschranken für Gleich- und
Wechsellichtbetrieb
Features
●Especially suitable for applications
of 950 nm
●Short switching time (typ. 20 ns)
●DIL plastic package with high packing density
●BPW 34 FS/(E9087); suitable for vapor-
phase and IR-reflow soldering
Applications
●IR remote control of hi-fi and TV sets,
video tape recorders, remote controls of
various equipment
●Photointerrupters
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group 2 1998-08-27
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type Bestellnummer
Ordering Code
BPW 34 F Q62702-P929
BPW 34 FS Q62702-P1604
BPW 34 FS (E9087) Q62702-P1826
4.5
4.3
4.0
3.7 1.5
1.7
0.9
0.7
Photosensitive area Cathode lead
GEO06863
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5˚
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
±0.2
feo06861feo06916
BPW 34 FAS (E9087)
BPW 34 FS
4.5
4.3
4.0
3.7 1.5
1.7
0.9
0.7
Photosensitive area Cathode lead
GEO06916
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5˚
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
±0.2
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group 3 1998-08-27
Grenzwerte
Maximum Ratings
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top;Tstg – 40 ... + 85 °C
Sperrspannung
Reverse voltage VR32 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Fotoempfindlichkeit
Spectral sensitivity
VR = 5 V, Ee = 1 mW/cm2
S50 (≥ 40) µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 950 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von Smax
Spectral range of sensitivity
S = 10 % of Smax
λ780 ... 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A7.00 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.65 ×2.65 mm ×mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity Sλ0.59 A/W
Quantenausbeute
Quantum yield η0.77 Electrons
Photon
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO330 (≥ 275) mV
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group 4 1998-08-27
Kurzschlußstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 25 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR= 5 V; λ = 850 nm; Ip = 800 µA
tr,tf20 ns
Durchlaßspannung, IF= 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR= 0 V, f= 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR= 10 V
NEP 4.3 ×10– 14 W
√Hz
Nachweisgrenze, VR= 10 V
Detection limit D* 6.2 ×1012 cm · √Hz
W
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics (cont’d)
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group 5 1998-08-27
Directional characteristics Srel =f (ϕ)
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Relative spectral sensitivity
Srel =f (λ)
Dark current
IR=f (VR), E = 0
Photocurrent IP=f (Ee), VR = 5 V
Open-circuit voltage VO=f (Ee)
Capacitance
C=f (VR), f = 1 MHz, E = 0
Total power dissipation
Ptot =f (TA)
Dark current
IR=f (TA), VR= 10 V, E = 0
λ
OHF00368
0
rel
S
700
20
40
60
80
%
100
nm
800 900 1000 1200
0
OHF00080
Ι
R
R
V
0 5 10 15 V 20
1000
2000
3000
4000
pA
E
OHF01097
e
0
10
P
Ι
10
1
10
2
10
4
10
-1
10
0
10
1
10
2
4
10
3
10
2
10
1
10
10
0
µ
AmV
Ι
P
V
O
3
10
µ
W/cm
2
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
