BSC021N08NS5 MOSFET OptiMOSTM5Power-Transistor,80V TSON-8-3 8 7 Features 5 6 6 5 *OptimizedforSynchronousRectificationinserveranddesktop *100%avalanchetested *Superiorthermalresistance *N-channel *175Crated *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21 ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters 7 8 Pin 1 2 4 3 3 4 2 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 80 V G4 5D RDS(on),max 2.1 m ID 100 A Qoss 110 nC QG(0V..10V) 94 nC Type/OrderingCode Package Marking RelatedLinks BSC021N08NS5 TSON-8-3 021N08N - Final Data Sheet 1 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 1Maximumratings atTA=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 100 27 A VGS=10V,TC=25C VGS=10V,TC=100C VGS=10V,TC=25C,RthJA=50K/W1) - 400 A TC=25C - - 679 mJ ID=50A,RGS=25 VGS -20 - 20 V - Power dissipation Ptot - - 214 3.0 W TC=25C TA=25C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 175 C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics atTj=25C,unlessotherwisespecified Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.4 0.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=146A - 0.1 10 1 100 A VDS=80V,VGS=0V,Tj=25C VDS=80V,VGS=0V,Tj=125C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.6 2.2 2.1 2.9 m VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.9 2.9 - Transconductance gfs 70 140 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 6600 8600 pF VGS=0V,VDS=40V,f=1MHz Coss - 1100 1400 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 47 82 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3 Rise time tr - 17 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3 Turn-off delay time td(off) - 44 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3 Fall time tf - 20 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3 Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 29 - nC VDD=40V,ID=50A,VGS=0to10V Qg(th) - 20 - nC VDD=40V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 20 29 nC VDD=40V,ID=50A,VGS=0to10V Switching charge Qsw - 29 - nC VDD=40V,ID=50A,VGS=0to10V Gate charge total Qg - 94 117 nC VDD=40V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=40V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 81 - nC VDS=0.1V,VGS=0to10V Qoss - 110 147 nC VDD=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See Gate charge waveforms for parameter definition Final Data Sheet 4 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 100 A TC=25C - 400 A TC=25C - 0.83 1.1 V VGS=0V,IF=50A,Tj=25C trr - 50 100 ns VR=40V,IF=50A,diF/dt=100A/s Qrr - 80 160 nC VR=40V,IF=50A,diF/dt=100A/s Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 240 120 200 100 160 80 ID[A] Ptot[W] Diagram1:Powerdissipation 120 60 80 40 40 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 200 100 10 0.5 1 s 10 s 102 0.2 10 -1 0.1 ZthJC[K/W] 100 s ID[A] 175 TC[C] 1 ms 101 10 ms DC 0.05 0.02 0.01 10-2 single pulse 0 10 10-1 10-1 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 6 7V 10 V 360 5 320 5V 6V 280 RDS(on)[m] 240 ID[A] 5.5 V 4 5.5 V 200 160 6V 3 7V 2 5V 120 10 V 80 1 40 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 240 360 200 320 280 160 gfs[S] ID[A] 240 200 120 160 80 120 80 40 175 C 40 0 0 2 25 C 4 6 8 0 0 25 50 VGS[V] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 75 100 125 150 ID[A] gfs=f(ID),VDS=3V,Tj=25C 7 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 5 4 4 1460 A 3 max VGS(th)[V] RDS(on)[m] 3 2 146 A 2 typ 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[C] 60 100 140 180 Tj[C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 C 25 C, max 175 C 175 C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 40 V 8 7 25 C 101 100 C VGS[V] IAV[A] 6 16 V 5 64 V 4 3 150 C 2 1 100 100 101 102 103 tAV[s] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 88 86 VBR(DSS)[V] 84 82 80 78 76 -80 -40 0 40 80 120 160 200 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlineTSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2018-03-19 OptiMOSTM5Power-Transistor,80V BSC021N08NS5 RevisionHistory BSC021N08NS5 Revision:2018-03-19,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-03-19 Release of final version TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2018-03-19