Stand-off voltage Repetitive surge capability TRANZAP's are silicon PN junction diodes designed, manufactured and specified as Transient Voltage Suppressors having a non-linear current-voltage characteristic which sustains an almost constant voltage over a wide range of current. They are ideally suited to many transient voltage protection applications and their high clamping efficiency and low steady state power dissipation offer considerable circuit advantages over most existing methods of protection. During operation, the ZAP idles at a low current level at the nominal voltage. When a transient voltage occurs, ZAP current increases rapidly, its voltage remaining virtually constant, and the transient energy content is thus absorbed. TRANZAP's are designed for transient voltage suppression, it is not preferable to consume power at the operating voltage. Stand-off voltage is fixed to be of a value 0.9 times the minimum breakdown voltage. Peak pulse power is fixed under non-repetitive conditions. However, in practical use, there are cases when the surge is often repeatedly applied. In this case, even though the one pulse power remains within the peak pulse power, the power is accumulative and exceeds the peak pulse power in some cases. Features Continuous operating power High surge current capability Excellent voltage clamping (1.2 @ 50% peak power) Symmetrical characteristic - use on AC or DC (bipolar) Instantaneous response (pico-second order) Low idling current (5m-Amps) Applications Protection of all types of semiconductors Absorption of surges associated with lightning Suppression of switching surges Protection in inductive switching circuits Prolongation of contact life Voltage clipping Lead wire Epoxy resin Header Solder Silicon chip Construction ZAP construction features PN junctions on both faces of a silicon chip and has been sufficiently designed for thermal dissipation of high surge power in a short period of time. Figure 1 Surge suppression characteristics Surge suppression is shown in Figure 2 when standard surge is applied to test circuit of Figure 3. lp Peak current Figure 2 The current when the stand-off voltage is applied is fixed as the maximum leakage current. This leakage current is an important factor when used in circuits with high impedance. The terminal voltage when a test current is passed, is fixed to be the breakdown voltage. The breakdown voltage is measured in air 25C. The test current is normally 1 mA. The PN junction temperature is determined by the following equation: Tj=(Pq)+Ta P: Applied power Thermal resistance Ta: Ambient temperature Where, q is thermal resistance from the PN junction to ambient space and is determined by following equation: q=(1/K)x(L/S) K: Thermal conductivity L: Length of lead wire S: Sectional area of lead wire In case of Ta=50C, Tj = 150C, the maximum operating power is as follows: Z1 type: 500m Watts Z2 type: 1 Watt Z6 type: 3 Watts Surge capability Surge capability (P) is determined by the following equation: P=i(t)(V(t)dt) it : Pulse current wave Vt : clamping voltage wave Allowable surge capability (Pm) is determined by the following equation: Pm=IP x VC IP : Peak current VC : Maximum clamping voltage The allowable surge capability (peak pulse power) is as shown in Figure 5 and the surge capability derating characteristic as shown in Figure 6. 70 60 50 40 Figure 7 30 20 10 1 2 5 10 20 50 100 200 500 1000 2000 5000 10000 Repeating time (msec) Response time Response time of psec order however, in its operating response time, it depends largely on the influence of capacitance, and the effect of the response time with respect to the clamping voltages is negligible. Capacitance Capacitance is determined by the area of a silicon chip and the breakdown voltage. The capacitance decreases as the bias voltage increases as shown in Figure 8. Figure 8 1nF O Bias Z6 Type Time RO O Bias Figure 5 Peak pulse power (w) Current Voltage 80 105 Maximum clamping voltage Clamping voltage waveform Figure 3 90 Breakdown voltage Test pulse wave form VC 100 Pulse power ratio (%) Leakage current Capacitance Description/Features ZAP 100PF 104 Z6 Type Z2 Type 103 Z2 Type Z1 Type 102 O Bias 50% Bias 10 V(t) 70% Bias 10-4 Test pulse R1 10-3 I(t) 10-2 10-1 1 Time (msec) 10 102 15 20 100 Electrical characteristics Taping Power ratio (%) 80 Figure 4 IT Typically VB F < < 0.9 = 1.10 VB R = Standard taping is available upon request. 60 Forming Standard forming is available upon request. 40 20 IL VB IT VS: Stand-off voltage VB: Break down voltage VC: Maximum clamping voltage IL: Maximum leakage current IT: Test current IP: Peak pulse current 30 40 50 60 80 100 Break down voltage (V) Figure 6 Figure 4 shows an almost symmetrical breakdown voltage (VB) ratio between VC forward (VBF) and VB reverse breakdown VS voltage (VBR). IP 20 40 Z1 Type 10PF 50 80 100 120 Ambient temperature (C) 140 200 Z1 type (Bidirectional) Maximum ratings Peak pulse power: 250 watt (10 x 1,000 msec) 3.03 KWatt (8 x 20 msec) Steady state power dissipation: 500 mWatts Operating and storage temperature: -40C to 150C Symbol mark 27.51 3.60.3 Type No. & Lot No. Cathode mark 60.3 Epoxy resin Bi-polar type Z1015 Z1018 Z1022 Z1027 Z1033 Z1039 Z1047 Z1056 Z1068 Z1082 Z1100 Z1120 Z1150 Stand-off Maximum voltage leakage current VS V IL 12.1 5 14.5 5 17.8 5 21.8 5 26.8 5 31.6 5 38.1 5 45.4 5 55.1 5 66.4 5 81.0 5 97.2 5 121 5 Breakdown voltage Test current VB 13.5-16.5 16.2-19.8 19.8-24.2 24.3-29.7 29.7-36.3 35.1-42.9 42.3-51.7 50.4-61.6 61.2-74.8 73.8-90.2 90.0-110 108-132 135-165 IT mA 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum clamping voltage & Maximum peak pulse current 10/1000 msec 8/20 msec VC IP VC IP V A V A 22.0 11.4 28.5 106 26.5 9.43 34.4 88.0 31.9 7.84 41.4 73.1 39.1 6.39 50.7 59.7 47.7 5.24 61.8 49.0 56.4 4.43 73.1 41.4 67.8 3.69 88.1 34.4 80.5 3.11 10.4 29.1 98.0 2.55 127 23.8 118 2.12 153 19.8 144 1.74 187 16.2 173 1.45 224 13.5 215 1.16 279 10.8 Max temp. coef. of VB %/C 0.076 0.079 0.082 0.085 0.087 0.090 0.092 0.094 0.096 0.099 0.101 0.103 0.105 VZ10% and Bi-polar 0.8f Soldered copper wire Z2 type Maximum ratings Peak pulse power: 600 Watt (10/1,000msec) 7.28 KWatt (8/20msec) Steady state power dissipation: 1 Watt Operating and storage temperature: -40C to 150C Symbol mark 27.51 3.60.3 Type No. & Lot No. Cathode mark 60.3 Epoxy resin 0.8f Soldered copper wire Bi-polar type Z2008 Z2010 Z2012 Z2015 Z2018 Z2022 Z2027 Z2033 Z2039 Z2047 Z2056 Z2068 Z2082 Z2100 Z2120 Z2150 Z2180 Uni-polar type Z2008U Z2010U Z2012U Z2015U Z2018U Z2022U Z2027U Z2033U Z2039U Z2047U Z2056U Z2068U Z2082U Z2100U Z2120U Z2150U Z2180U Stand-off voltage VS V 6.63 8.10 9.72 12.1 14.5 17.8 21.8 26.8 31.6 38.1 45.4 55.1 66.4 81.0 97.2 121 146 Maximum Breakdown Test leakage voltage current current IL VB IT mA V mA 500 7.38-9.02 10 10 9.00-11.0 1 5 10.8-13.2 1 5 13.5-16.5 1 5 16.2-19.8 1 5 19.8-24.2 1 5 24.3-29.7 1 5 29.7-36.3 1 5 35.1-42.9 1 5 42.3-51.7 1 5 50.4-61.6 1 5 61.2-74.8 1 5 73.8-90.2 1 5 90.0-110 1 5 108-132 1 5 135-165 1 5 162-198 1 Maximum clamping voltage & Maximum peak pulse current 10/1000 msec 8/20 msec VC IP VC IP V A V A 12.5 48.0 16.2 449 15.0 40.0 19.4 375 17.3 34.6 22.4 325 22.0 27.2 28.5 255 26.5 22.6 34.4 298 31.9 18.8 41.4 175 39.1 15.3 50.7 143 47.7 12.5 61.8 117 56.4 10.6 73.1 99.5 67.8 8.84 78.9 92.2 80.5 7.45 104 70.0 98.0 6.12 127 60.6 118 5.08 153 47.5 144 4.16 187 38.9 173 3.46 224 32.5 215 2.79 279 26.0 258 2.32 335 21.7 Note: Nonsuffix: VZ10% and Bi-polar, suffix "U": Uni-polar Z6 type Maximum ratings Peak pulse power: 1.5 KWatt (10 x 1,000msec) 18.2 KWatt (8 x 20msec) Steady state power dissipation: 3 Watts Operating and storage temperature: -40C to 150C Symbol mark 262 5.30.5 Type No. & Lot No. Cathode mark 90.5 Epoxy resin 1f Soldered copper wire Bi-polar type - Z6010 Z6012 Z6015 Z6018 Z6022 Z6027 Z6033 Z6039 Z6047 Z6056 Z6068 Z6082 Z6100 Z6120 Z6150 Uni-polar type Z6008U Z6010U Z6012U Z6015U Z6018U Z6022U Z6027U Z6033U Z6039U Z6047U Z6056U Z6068U Z6082U Z6100U Z6120U Z6150U Stand-off voltage VS V 6.63 8.10 9.72 12.1 14.5 17.8 21.8 26.8 31.6 38.1 45.4 55.1 66.4 81.0 97.2 121 Maximum Breakdown Test leakage voltage current current IL VB IT mA V mA 500 7.38-9.02 10 10 9.00-11.0 1 5 10.8-13.2 1 5 13.5-16.5 1 5 16.2-19.8 1 5 19.8-24.2 1 5 24.3-29.7 1 5 29.7-36.3 1 5 35.1-42.9 1 5 42.3-51.7 1 5 50.4-61.6 1 5 61.2-74.8 1 5 73.8-90.2 1 5 90.0-110 1 5 108-132 1 5 135-165 1 Maximum clamping voltage & Maximum peak pulse current 10/1000 msec 8/20 msec VC IP VC IP V A V A 12.5 120 16.2 1124 15.0 100 19.4 938 17.3 87 22.4 813 22.0 68 28.5 639 26.5 56 34.4 529 31.9 47 41.4 440 39.1 38 50.7 359 47.7 31 61.8 295 56.4 26 73.1 249 67.8 22.2 78.9 231 80.5 18.6 104 175 98.0 15.3 127 143 118 12.7 153 119 144 10.4 187 97.4 173 8.7 224 81.3 215 7.0 279 65.2 Note: Nonsuffix: VZ10% and Bi-polar, suffix "U": Uni-polar CKE P.O. 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