VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES * Glass passivated pellet chip junction Base cathode 2 * 150 C max operating junction temperature * Low forward voltage drop and short reverse recovery time 2 3 TO-220AC 1 1 Cathode * Designed and JEDEC(R)-JESD 47 3 Anode according * Material categorization: for definitions of compliance www.vishay.com/doc?99912 please to see APPLICATIONS PRODUCT SUMMARY Package qualified These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. TO-220AC IF(AV) 10 A VR 1000 V, 1200 V VF at IF 1.33 V IFSM 140 A trr 80 ns TJ max. 150 C Diode variation Single die Snap factor 0.6 DESCRIPTION The VS-10ETF1... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 1000 to 1200 V Sinusoidal waveform 10 A 140 IFSM trr 1 A, 100 A/s VF 10 A, TJ = 25 C 80 ns 1.33 V -40 to +150 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA VS-10ETF10PbF, VS-10ETF10-M3 1000 1100 VS-10ETF12PbF, VS-10ETF12-M3 1200 1200 TJ VOLTAGE RATINGS PART NUMBER 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 125 C, 180 conduction half sine wave 10 Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 115 Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, no voltage reapplied 140 10 ms sine pulse, rated VRRM applied 66 10 ms sine pulse, no voltage reapplied 94 t = 0.1 to 10 ms, no voltage reapplied 940 UNITS A A2s A2s Revision: 11-Feb-16 Document Number: 94092 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 C TJ = 150 C TJ = 25 C 1.33 V 22.9 m 0.96 V 0.1 VR = Rated VRRM TJ = 150 C UNITS mA 4 RECOVERY CHARACTERISTICS SYMBOL PARAMETER Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr TEST CONDITIONS IF at 10 Apk 25 A/s 25 C S Typical snap factor VALUES UNITS 310 ns 4.7 A 1.05 C IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device UNITS -40 to +150 C 1.5 62 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Case style TO-220AC (JEDEC) 10ETF10 10ETF12 Revision: 11-Feb-16 Document Number: 94092 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors 24 10ETF.. Series RthJC(DC) = 1.5 C/W 145 140 O Conduction angle 135 130 30 60 125 90 120 120 180 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) 150 115 2 4 6 8 10 16 12 RMS limit 8 O Conduction period 4 12 10ETF.. Series TJ = 150 C 0 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 130 150 10ETF.. Series RthJC(DC) = 1.5 C/W 145 140 O Conduction period 135 130 30 60 125 90 120 120 180 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 20 0 0 110 100 90 80 70 60 50 VS-10ETF.. Series 40 DC 30 115 0 2 4 6 8 10 12 14 1 16 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 140 16 180 120 90 60 30 14 12 120 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180 120 90 60 30 10 RMS limit 8 O 6 Conduction angle 4 10ETF.. Series TJ = 150 C 2 2 4 6 8 80 60 40 20 0 0 100 10 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 0 0.01 VS-10ETF.. Series 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 11-Feb-16 Document Number: 94092 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series Vishay Semiconductors 1000 2.0 10ETF.. Series TJ = 25 C TJ = 150 C TJ = 25 C Qrr - Typical Reverse Recovery Charge (C) Instantaneous Forward Current (A) www.vishay.com 100 10 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 C 5 10ETF.. Series TJ = 150 C Qrr - Typical Reverse Recovery Charge (C) 10ETF.. Series TJ = 25 C 0.5 trr - Typical Reverse Recovery Time (s) 1.6 10ETF.. Series 1 0.5 0.6 IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A 0.4 0.3 0.2 0.1 IFM = 10 A 4 IFM = 8 A 3 IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 8 - Recovery Time Characteristics, TJ = 25 C Fig. 11 - Recovery Charge Characteristics, TJ = 150 C 0.8 20 10ETF.. Series TJ = 25 C 0.6 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 C trr - Typical Reverse Recovery Time (s) IFM = 10 A IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A 0.4 0.2 0 IFM = 10 A 16 IFM = 8 A 12 IFM = 5 A 8 IFM = 2 A IFM = 1 A 4 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 9 - Recovery Time Characteristics, TJ = 150 C Fig. 12 - Recovery Current Characteristics, TJ = 25 C Revision: 11-Feb-16 Document Number: 94092 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors 25 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 C IFM = 10 A 20 IFM = 8 A 15 IFM = 5 A IFM = 2 A 10 IFM = 1 A 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) ZthJC - Transient Thermal Impedance (C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 C 10 Steady state value (DC operation) 1 0.1 0.01 0.001 0.001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.1 10ETF.. Series 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 11-Feb-16 Document Number: 94092 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T F 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: 4 - E = single diode Package: T = TO-220AC 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - Environmental digit 10 = 1000 V 12 = 1200 V PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-10ETF10PbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-10ETF10-M3 50 1000 Antistatic plastic tube VS-10ETF12PbF 50 1000 Antistatic plastic tube VS-10ETF12-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95221 TO-220AC PbF www.vishay.com/doc?95224 TO-220AC -M3 www.vishay.com/doc?95068 Revision: 11-Feb-16 Document Number: 94092 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90 to 93 6, 7 2 2 90 to 93 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000