VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
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Revision: 11-Feb-16 1Document Number: 94092
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Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF1... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 10 A
VR1000 V, 1200 V
VF at IF1.33 V
IFSM 140 A
trr 80 ns
TJ max. 150 °C
Diode variation Single die
Snap factor 0.6
Anode
1
2
3
Cathode
Base
cathode
TO-220AC 1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
VRRM 1000 to 1200 V
IF(AV) Sinusoidal waveform 10 A
IFSM 140
trr 1 A, 100 A/μs 80 ns
VF10 A, TJ = 25 °C 1.33 V
TJ-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-10ETF10PbF, VS-10ETF10-M3 1000 1100 4
VS-10ETF12PbF, VS-10ETF12-M3 1200 1200
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 125 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 115
10 ms sine pulse, no voltage reapplied 140
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 66 A2s
10 ms sine pulse, no voltage reapplied 94
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 940 A2s
VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Feb-16 2Document Number: 94092
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 10 A, TJ = 25 °C 1.33 V
Forward slope resistance rtTJ = 150 °C 22.9 m
Threshold voltage VF(TO) 0.96 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM 0.1 mA
TJ = 150 °C 4
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr IF at 10 Apk
25 A/μs
25 °C
310 ns
Reverse recovery current Irr 4.7 A
Reverse recovery charge Qrr 1.05 μC
Typical snap factor S0.6
IFM trr
dir
dt
IRM(REC)
Qrr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance
junction to case RthJC DC operation 1.5
°C/W
Maximum thermal resistance
junction to ambient RthJA 62
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC (JEDEC) 10ETF10
10ETF12
VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
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Revision: 11-Feb-16 3Document Number: 94092
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
115
0 2 4 6 8 10 12
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
30° 60°
90°
180°
120°
10ETF.. Series
RthJC(DC) = 1.5 °C/W
Conduction angle
145
140
135
130
125
120
Ø
0246810 16
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
30° 60°
90°
180°
120°
10ETF.. Series
RthJC(DC) = 1.5 °C/W
DC
Ø
Conduction period
12 14
150
115
145
140
135
130
125
120
0246810
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
16
0
12
10
8
6
4
2
30°
60°
90°
180°
120°
RMS limit
10ETF.. Series
TJ = 150 °C
14
Conduction angle
Ø
02468 16
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
24
0
16
12
8
4
20
10ETF.. Series
TJ = 150 °C
DC
30°
60°
90°
180°
120°
RMS limit
Ø
Conduction period
10 12 14
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
110100
30
40
50
60
70
80
90
100
110
120
130
VS-10ETF.. Series
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
0
20
40
60
80
100
120
140
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
VS-10ETF.. Series
VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
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Revision: 11-Feb-16 4Document Number: 94092
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
1000
10
1
0.5 1.0 1.5 2.0 2.5 4.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
10ETF.. Series
TJ = 150 °C
TJ = 25 °C
100
4.03.0 3.5
0.6
0.3
0
0 40 80 120 160 200
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.2
0.5
0.4
10ETF.. Series
TJ = 25 °C
IFM = 10 A
IFM = 1 A
IFM = 2 A
IFM = 5 A
IFM = 8 A
0.8
0.6
0
0 40 80 120 160 200
trr - Typical Reverse
Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.2
0.4
10ETF.. Series
TJ = 150 °C
IFM = 8 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 2 A
1.6
0
0 40 80 120 160 200
Q
rr
- Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.4
0.8
1.2
IFM = 1 A
IFM = 2 A
IFM = 5 A
IFM = 10 A
IFM = 8 A
10ETF.. Series
TJ = 25 °C
2.0
5
3
0
0 40 80 120 160 200
Qrr - Typical Reverse
Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
4
10ETF.. Series
TJ = 150 °C
IFM = 1 A
IFM = 2 A
IFM = 5 A
IFM = 10 A
IFM = 8 A
20
12
0
0 40 80 120 160 200
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
4
8
16
10ETF.. Series
TJ = 25 °C
IFM = 1 A
IFM = 2 A
IFM = 5 A
IFM = 10 A
IFM = 8 A
VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Feb-16 5Document Number: 94092
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Fig. 14 - Thermal Impedance ZthJC Characteristics
25
15
0
0 40 80 120 160 200
Irr - Typical Reverse
Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
5
10
20
10ETF.. Series
TJ = 150 °C IFM = 10 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
IFM = 8 A
0.1
1
10
100.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (°C/W)
0.001
0.01 10ETF.. Series
Single pulse
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-10ETF1...PbF Series, VS-10ETF1...-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 11-Feb-16 6Document Number: 94092
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10ETF10PbF 50 1000 Antistatic plastic tube
VS-10ETF10-M3 50 1000 Antistatic plastic tube
VS-10ETF12PbF 50 1000 Antistatic plastic tube
VS-10ETF12-M3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information TO-220AC PbF www.vishay.com/doc?95224
TO-220AC -M3 www.vishay.com/doc?95068
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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