NVHL040N65S3F MOSFET - Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 40 mW @ 10 V 65 A D G Features * * * * * * 700 V @ TJ = 150C Typ. RDS(on) = 33.8 mW Ultra Low Gate Charge (Typ. Qg = 153 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF) 100% Avalanche Tested AEC-Q101 Qualified and PPAP Capable S POWER MOSFET Applications G * Automotive On Board Charger HEV-EV * Automotive DC/DC converter for HEV-EV S TO-247 LONG LEADS CASE 340CX D MARKING DIAGRAM $Y&Z&3&K NVHL 040N65S3F $Y &Z &3 &K NVHL040N65S3F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 July, 2019 - Rev. 1 1 Publication Order Number: NVHL040N65S3F/D NVHL040N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current NVHL040N65S3F Unit 650 V - DC 30 V - AC (f > 1 Hz) 30 - Continuous (TC = 25C) 65 - Continuous (TC = 100C) 45 IDM Drain Current 162.5 A EAS Single Pulsed Avalanche Energy (Note 2) 1009 mJ EAR Repetitive Avalanche Energy (Note 1) 4.46 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD - Pulsed (Note 1) A Power Dissipation (TC = 25C) - Derate Above 25C TJ, TSTG TL Operating and Storage Temperature Range 446 W 3.57 W/C -55 to +150 C 300 C Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 9 A, RG = 25 W, starting TJ = 25C. 3. ISD 32.5 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. NVHL040N65S3F Unit 0.28 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL040N65S3F NVHL040N65S3F TO-247 Tube N/A N/A 30 Units www.onsemi.com 2 NVHL040N65S3F ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 - - V VGS = 0 V, ID = 10 mA, TJ = 150_C 700 - - V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C - 0.64 - V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 mA VDS = 520 V, TC = 125_C - 103 - IGSS Gate to Body Leakage Current VGS = 30 V, VDS = 0 V - - 100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.1 mA 3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 32.5 A - 33.8 40 mW Forward Transconductance VDS = 20 V, ID = 32.5 A - 40 - S VDS = 400 V, VGS = 0 V, f = 1 MHz - 5875 - pF - 140 - pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 1333 - pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 241 - pF Total Gate Charge at 10 V VDS = 400 V, ID = 32.5 A, VGS = 10 V (Note 4) - 153 - nC - 51 - nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance - 61 - nC f = 1 MHz - 1.9 - W VDD = 400 V, ID = 32.5 A, VGS = 10 V Rg = 2.2 W (Note 4) - 41 - ns - 53 - ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time - 96 - ns Turn-Off Fall Time - 28 - ns Maximum Continuous Source to Drain Diode Forward Current - - 65 A ISM Maximum Pulsed Source to Drain Diode Forward Current - - 162.5 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 32.5 A - - 1.3 V trr Reverse Recovery Time - 159 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 32.5 A, dIF/dt = 100 A/ms - 840 - nC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVHL040N65S3F TYPICAL CHARACTERISTICS 10 5.5 V 1 200 1 10 Figure 2. On-Region Characteristics 4 5 6 7 8 9 0.06 TC = 25C 0.05 VGS = 10 V 0.04 VGS = 20 V 0.03 0.02 0 CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) TJ = 25C 0.01 TJ = -55C 0.5 150 180 Ciss 10K 1K f = 1 MHz VGS = 0 V 100 1.0 1.5 1 2.0 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0 120 100K 1 0.001 90 1M TJ = 150C 0.1 60 Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage 250 ms Pulse Test VGS = 0 V 10 30 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics 100 20 10 Figure 1. On-Region Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) 1000 1 VDS, DRAIN-SOURCE VOLTAGE (V) TJ = -55C 3 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) TJ = 150C 1 5.5 V 10 1 TJ = 25C 10 7.0 V 6.0 V 20 250 ms Pulse Test VDS = 20 V 100 VGS = 10 V 8.0 V 6.5 V 250 ms Pulse Test TC = 25C 0.2 250 ms Pulse Test TC = 150C 100 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) ID, DRAIN CURRENT (A) 7.0 V 6.5 V 6.0 V 0.1 ID, DRAIN CURRENT (A) 200 8.0 V VGS = 10 V ID, DRAIN CURRENT (A) 200 100 10-1 100 101 Crss 102 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 103 NVHL040N65S3F VDD = 130 V ID = 32.5 A VDD = 400 V 8 6 4 2 0 0 60 120 180 1.2 VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 -75 25 75 125 175 TJ, JUNCTION TEMPERATURE (C) Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 300 3.0 VGS = 10 V ID = 32.5 A 2.0 1.5 1.0 0.5 0 -75 -25 25 75 125 10 ms Operation in this Area is Limited by RDS(ON) DC 1 0.1 175 100 ms 1 ms 10 TC = 25C TJ = 150C Single Pulse 1 10 100 1K TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. On-Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 80 40 70 35 60 30 50 25 40 30 20 15 20 10 10 5 25 30 ms 100 ID, DRAIN CURRENT (A) 2.5 0 -25 Qg, TOTAL GATE CHARGECHARGE (nC) Eoss (mJ) ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) VGS, GATE-SOURCE VOLTAGE (V) 10 BVDSS, DRAIN-SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 50 75 100 125 0 150 0 130 260 390 520 650 TC, CASE TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain-to-Source Voltage www.onsemi.com 5 NVHL040N65S3F TYPICAL CHARACTERISTICS POWER DISSIPATION MULTIPLIER 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 13. Normalized Power Dissipation vs. Case Temperature IDM, PEAK CURRENT (A) 5000 VGS = 10 V TC = 25C For temperatures above 25C derate peak current as follows: 1000 I + I 25 150 * T C 125 100 Single Pulse 10 10-5 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION (s) Figure 14. Peak Current Capability IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] Starting TJ = 25C 10 Starting TJ = 125C 1 NOTE: Refer to Application Notes AN7514 and AN7515 0.001 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) Figure 15. Unclamped Inductive Switching Capability www.onsemi.com 6 101 NVHL040N65S3F 1.2 200 NRMALIZED GATE THRESHOLD VOLTAGE 180 160 140 120 100 TA = 150C 80 60 Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID = 32.5 A 40 20 0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mW) TYPICAL CHARACTERISTICS 4 5 6 TA = 25C 7 8 9 VGS = VDS ID = 2.1 mA 1.0 0.8 0.6 -80 10 -40 0 40 80 120 160 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 16. RDS(ON) vs. Gate Voltage Figure 17. Normalized Gate Threshold Voltage vs. Temperature 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 0.001 t1 Single Pulse 0.00001 0.0001 0.001 t2 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 18. Transient Thermal Response Curve www.onsemi.com 7 ZqJC(t) = r(t) x RqJC RqJC = 0.28C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.1 1 NVHL040N65S3F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 19. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 20. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 8 Time NVHL040N65S3F + DUT VDS - ISD L Driver RG Same Type as DUT VGS - dv/dt controlled by RG - ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO-247-3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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