NVHL040N65S3F - ON SEMICONDUCTOR

July, 2019 − Rev. 1

1Publication Order Number:

NVHL040N65S3F/D

NVHL040N65S3F

MOSFET – Power,

N-Channel, SUPERFET) III,

FRFET)

650 V, 65 A, 40 mW

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET is very suitable for the

various power system for miniaturization and higher efficiency.

SUPERFET III FRFET MOSFET’s optimized reverse recovery

performance of body diode can remove additional component and

improve system reliability.

Features

•700 V @ TJ = 150°C

•Typ. RDS(on) = 33.8 mW

•Ultra Low Gate Charge (Typ. Qg = 153 nC)

•Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF)

•100% Avalanche Tested

•AEC−Q101 Qualified and PPAP Capable

Applications

•Automotive On Board Charger HEV−EV

•Automotive DC/DC converter for HEV−EV

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

NVHL040N65S3F = Specific Device Code

MARKING DIAGRAM

VDSS RDS(ON) MAX ID MAX

650 V 40 mW @ 10 V 65 A

POWER MOSFET

$Y&Z&3&K

NVHL

040N65S3F

TO−247 LONG LEADS

CASE 340CX

NVHL040N65S3F

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)

Symbol Parameter NVHL040N65S3F Unit

VDSS Drain to Source Voltage 650 V

VGSS Gate to Source Voltage − DC ±30 V

− AC (f > 1 Hz) ±30

IDDrain Current − Continuous (TC = 25°C) 65 A

− Continuous (TC = 100°C) 45

IDM Drain Current − Pulsed (Note 1) 162.5 A

EAS Single Pulsed Avalanche Energy (Note 2) 1009 mJ

EAR Repetitive Avalanche Energy (Note 1) 4.46 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 50

PDPower Dissipation (TC = 25°C) 446 W

− Derate Above 25°C 3.57 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C

TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. IAS = 9 A, RG = 25 W, starting TJ = 25°C.

3. ISD ≤ 32.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter NVHL040N65S3F Unit

RqJC Thermal Resistance, Junction to Case, Max. 0.28 _C/W

RqJA Thermal Resistance, Junction to Ambient, Max. 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

NVHL040N65S3F NVHL040N65S3F TO−247 Tube N/A N/A 30 Units

NVHL040N65S3F

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage VGS =0V, I

D= 1 mA, TJ=25_C650 − − V

VGS =0V, I

D= 10 mA, TJ= 150_C700 − − V

DBVDSS / DTJBreakdown Voltage Temperature

Coefficient

ID= 10 mA, Referenced to 25_C−0.64 −V/_C

IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 10 mA

VDS = 520 V, TC= 125_C−103 −

IGSS Gate to Body Leakage Current VGS =±30 V, VDS =0V − − ±100 nA

ON CHARACTERISTICS

VGS(th) Gate Threshold Voltage VGS =V

DS, ID= 2.1 mA 3.0 −5.0 V

RDS(on) Static Drain to Source On Resistance VGS =10V, I

D= 32.5 A −33.8 40 mW

gFS Forward Transconductance VDS =20V, I

D= 32.5 A −40 −S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz −5875 −pF

Coss Output Capacitance −140 −pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V −1333 −pF

Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V −241 −pF

Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID= 32.5 A, VGS =10V

(Note 4)

−153 −nC

Qgs Gate to Source Gate Charge −51 −nC

Qgd Gate to Drain “Miller” Charge −61 −nC

ESR Equivalent Series Resistance f = 1 MHz −1.9 −W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD = 400 V, ID= 32.5 A, VGS =10V

Rg= 2.2 W

(Note 4)

−41 −ns

trTurn-On Rise Time −53 −ns

td(off) Turn-Off Delay Time −96 −ns

tfTurn-Off Fall Time −28 −ns

SOURCE-DRAIN DIODE CHARACTERISTICS

ISMaximum Continuous Source to Drain Diode Forward Current − − 65 A

ISM Maximum Pulsed Source to Drain Diode Forward Current − − 162.5 A

VSD Source to Drain Diode Forward Voltage VGS = 0V, I

SD = 32.5 A − − 1.3 V

trr Reverse Recovery Time VGS = 0V, I

SD = 32.5 A,

dIF/dt = 100 A/ms

−159 −ns

Qrr Reverse Recovery Charge −840 −nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

NVHL040N65S3F

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics

VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V)

1010.2

0.1

100

1010.1

100

200

Figure 3. Transfer Characteristics Figure 4. On−Resistance Variation vs. Drain

Current and Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

8765943

100

200

1801501209060300

0.02

0.03

0.04

0.05

0.06

Figure 5. Body Diode Forward Voltage

Variation vs. Source Current and Temperature

Figure 6. Capacitance Characteristics

VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

2.01.51.00.50

0.001

0.01

0.1

100

1000

100

10K

100K

ID, DRAIN CURRENT (A)

RDS(ON), DRAIN−SOURCE ON−RESISTANCE (W)

IS, REVERSE DRAIN CURRENT (A)

CAPACITANCE (pF)

200 VGS = 10 V 8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

VGS = 10 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

TJ = 150°C

TJ = −55°C

TJ = 25°C

TC = 25°C

VGS = 20 V

VGS = 10 V

TJ = 150°C

TJ = −55°C

TJ = 25°C

f = 1 MHz

VGS = 0 V

Ciss

Coss

Crss

250 ms Pulse Test

TC = 25°C

250 ms Pulse Test

TC = 150°C

20 20

250 ms Pulse Test

VDS = 20 V

250 ms Pulse Test

VGS = 0 V

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

10−1100101102103

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TYPICAL CHARACTERISTICS

Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs.

Temperature

Qg, TOTAL GATE CHARGECHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)

180120600

1751257525−25−75

0.8

0.9

1.0

1.1

1.2

Figure 9. On−Resistance Variation vs.

Temperature

Figure 10. Maximum Safe Operating Area

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V)

1751257525−25−75

0.5

1.0

1.5

2.0

2.5

3.0

1K100101

0.1

100

Figure 11. Maximum Drain Current vs. Case

Temperature

Figure 12. EOSS vs. Drain−to−Source Voltage

TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150125100755025

6505203902601300

VGS, GATE−SOURCE VOLTAGE (V)

BVDSS, DRAIN−SOURCE

BREAKDOWN VOLTAGE (Normalized)

RDS(ON), DRAIN−SOURCE ON−RESISTANCE (Normalized)

ID, DRAIN CURRENT (A)

Eoss (mJ)

ID = 32.5 A VDD = 130 V

VDD = 400 V

VGS = 10 V

ID = 32.5 A

VGS = 0 V

ID = 10 mA

10 ms

1 ms

100 ms

30 ms

Operation in this Area

is Limited by RDS(ON)

TC = 25°C

TJ = 150°C

Single Pulse

300

NVHL040N65S3F

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TYPICAL CHARACTERISTICS

Figure 13. Normalized Power Dissipation vs.

Case Temperature

TC, CASE TEMPERATURE (°C)

1251007550 150250

0.2

0.4

0.6

0.8

1.0

1.2

Figure 14. Peak Current Capability

t, RECTANGULAR PULSE DURATION (s)

100

1000

5000

Figure 15. Unclamped Inductive Switching

Capability

tAV, TIME IN AVALANCHE (ms)

1001010.10.010.001

100

POWER DISSIPATION MULTIPLIERIDM, PEAK CURRENT (A)IAS, AVALANCHE CURRENT (A)

Starting TJ = 25°C

Starting TJ = 125°C

Single Pulse

VGS = 10 V

NOTE: Refer to Application

Notes AN7514 and AN7515

If R = 0

tAV = (L)(IAS)/(1.3*RATED BVDSS − VDD)

If R ≠ 0

tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS − VDD) +1]

TC = 25°C

For temperatures above 25°C

derate peak current as follows:

I+I25 ƪ150 *TC

125

Ǹƫ

10−510−410−310−210−1100101

NVHL040N65S3F

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TYPICAL CHARACTERISTICS

Figure 16. RDS(ON) vs. Gate Voltage Figure 17. Normalized Gate Threshold Voltage

vs. Temperature

VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

10987654

120

140

160

200

16012080400−40−80

0.6

0.8

1.0

1.2

Figure 18. Transient Thermal Response Curve

t, RECTANGULAR PULSE DURATION (s)

10.10.010.0010.00010.00001

0.001

0.01

0.1

RDS(ON), DRAIN−SOURCE ON−RESISTANCE (mW)

NRMALIZED GATE THRESHOLD

VOLTAGE

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

VGS = VDS

ID = 2.1 mA

TA = 150°C

TA = 25°C

100

180

Single Pulse

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

ZqJC(t) = r(t) x RqJC

RqJC = 0.28°C/W

Peak TJ = PDM x ZqJC(t) + TC

Duty Cycle, D = t1 / t2

Pulse Duration = 250 ms

Duty Cycle = 0.5% Max

ID = 32.5 A

NVHL040N65S3F

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Figure 19. Gate Charge Test Circuit & Waveform

Figure 20. Resistive Switching Test Circuit & Waveforms

Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

VGS

DUT

VDD

VDS

VGS

10%

90%

10%

90% 90%

ton toff

trtf

td(on) td(off)

Qgd

Qgs

VGS

Charge

VDS

VGS

DUT

IG = Const.

VDD

VDS

DUT

VGS

VDD

Time

IAS

BVDSS

ID(t)

VDS(t)

EAS +1

2@LIAS

NVHL040N65S3F

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Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDD

ISD

VDS

−

VGS

Same Type

as DUT

−dv/dt controlled by RG

−ISD controlled by pulse period

Driver

VGS

(Driver)

ISD

(DUT)

VDS

(DUT) VSD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

D+Gate Pulse Width

Gate Pulse Period

SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United

States and/or other countries.

TO−247−3LD

CASE 340CX

ISSUE A

DATE 06 JUL 2020

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may

or may not be present. Some products may

not follow the Generic Marking.

XXXXXXXXX

AYWWG

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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