IRGP4068DPBF - INTERNATIONAL RECTIFIER

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

IRGP4068DPbF

IRGP4068D-EPbF

1www.irf.com

07/27/09

n-channel

VCES = 600V

IC = 48A, TC = 100°C

tSC ≥ 5μs, TJ(max) = 175°C

VCE(on) typ. = 1.65V

Features

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

•5 μS short circuit SOA

• Square RBSOA

• 100% of the parts tested for ILM

• Positive VCE (ON) Temperature co-efficient

• Ultra-low VF Hyperfast Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low VCE(on), Low Switching Losses

and Ultra-low VF

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Gate Collector Emitter

TO-247AC

IRGP4068DPbF

TO-247AD

IRGP4068D-EPbF

GCE

PD - 97250C

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 96

@ T

= 100°C Continuous Collector Current 48

Pulse Collector Current, V

= 15V 144

Clamped Inductive Load Current, V

= 20V

192 A

@ T

= 160°C Diode Continous Forward Current

8.0

FSM

Diode Non Repetitive Peak Surge Current @ T

= 25°C

175

FRM

@Tc = 100°C Diode Repetitive Peak Forward Current at tp=10μs

100

Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

@ T

= 25°C Maximum Power Dissipation 330 W

@ T

= 100°C Maximum Power Dissipation 170

Operating Junction and -55 to +175

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

θJC

(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W

θJC

(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.0

θCS

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

θJA

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

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Notes:

VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

fsw = 20KHz, refer to figure 19.

Sinusoidal half wave, t=10ms.

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Ref.Fig

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 — — V V

= 0V, I

= 100μA

CT6

ΔV

(BR)CES

/ΔT

Temperature Coeff. of Breakdown Voltage

—0.30—V/°C

= 0V, I

= 1mA (25°C-175°C)

CT6

—1.652.14 I

= 48A, V

= 15V, T

= 25°C

4,5,6

CE(on)

Collector-to-Emitter Saturation Voltage — 2.0 — V I

= 48A, V

= 15V, T

= 150°C

8,9,10

—2.05— I

= 48A, V

= 15V, T

= 175°C

GE(th)

Gate Threshold Voltage 4.0 — 6.5 V V

= V

, I

= 1.4mA

8,9,10,11,20

gfe Forward Transconductance — 32 — S V

= 50V, I

= 48A, PW = 80μs

CES

Collector-to-Emitter Leakage Current — 1.0 150 μAV

= 0V, V

= 600V

— 450 1000 V

= 0V, V

= 600V, T

= 175°C

Diode Forward Voltage Drop — 0.96 1.05 V I

= 8.0A

—0.810.86 I

= 8.0A, T

= 150°C

GES

Gate-to-Emitter Leakage Current — — ±100 nA V

= ±20V

Switching Characteristics @ T

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

Ref.Fig

Total Gate Charge (turn-on) — 95 140 I

= 48A

Gate-to-Emitter Charge (turn-on) — 28 42 nC V

= 15V

CT1

Gate-to-Collector Charge (turn-on) — 35 53 V

= 400V

= 48A, V

= 400V, V

= 15V

off

Turn-Off Switching Loss — 1275 1481 μJR

= 10

, L = 200μH,T

= 25°C

CT4

Energy losses include tail

d(off)

Turn-Off delay time — 145 176 ns I

= 48A, V

= 400V, V

= 15V

Fall time — 35 46 R

= 10Ω, L = 200μH,T

= 25°C

= 48A, V

= 400V, V

= 15V

off

Turn-Off Switching Loss — 1585 — μJR

= 10Ω, L = 200μH,T

= 175°C

CT4

Energy losses include tail

d(off)

Turn-Off delay time — 165 — ns I

= 48A, V

= 400V, V

= 15V

WF1

Fall time — 45 — R

=10

, L=200μH, T

= 175°C

ies

Input Capacitance — 3025 — V

= 0V

oes

Output Capacitance — 245 — pF V

= 30V

res

Reverse Transfer Capacitance — 90 — f = 1.0Mhz

= 175°C, I

= 192A

RBSOA Reverse Bias Safe Operating Area FULL SQUARE V

= 480V, Vp =600V

CT2

Rg = 10

, V

= +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — μsV

= 400V, Vp =600V

16, CT3

Rg = 10

, V

= +15V to 0V

WF2

Conditions

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

025 50 75 100 125 150 175 200

TC (°C)

100

IC (A)

0 25 50 75 100 125 150 175 200

TC (°C)

100

150

200

250

300

350

Ptot (W)

Fig. 3 - Reverse Bias SOA

TJ = 175°C; VGE = 20V

10 100 1000

VCE (V)

100

1000

IC (A)

Fig. 4 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80μs

0246810

VCE (V)

100

120

140

160

180

200

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

Fig. 5 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80μs

0246810

VCE (V)

100

120

140

160

180

200

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80μs

0246810

VCE (V)

100

120

140

160

180

200

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

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Fig. 7 - Typ. Diode Forward Voltage Drop

Characteristics

Fig. 8 - Typical VCE vs. VGE

TJ = -40°C

5 101520

VGE (V)

VCE (V)

ICE = 24A

ICE = 48A

ICE = 96A

Fig. 9 - Typical VCE vs. VGE

TJ = 25°C

5 101520

VGE (V)

VCE (V)

ICE = 24A

ICE = 48A

ICE = 96A

Fig. 10 - Typical VCE vs. VGE

TJ = 175°C

5 101520

VGE (V)

VCE (V)

ICE = 24A

ICE = 48A

ICE = 96A

Fig. 11 - Typ. Transfer Characteristics

VCE = 50V; tp = 10μs

0 5 10 15

VGE (V)

100

120

140

160

180

200

ICE (A)

TJ = 25°C

TJ = 175°C

Fig. 12 - Typ. Energy Loss vs. IC

TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V

0 255075100

IC (A)

1000

2000

3000

4000

5000

6000

Energy (μJ)

EOFF

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Fig. 17 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

020 40 60 80 100

VCE (V)

100

1000

10000

Capacitance (pF)

Cies

Coes

Cres

Fig. 13 - Typ. Switching Time vs. IC

TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V

020 40 60 80 100

IC (A)

100

1000

Swiching Time (ns)

tdOFF

Fig. 14 - Typ. Energy Loss vs. RG

TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V

0 25 50 75 100 125

Rg (Ω)

1000

1500

2000

2500

3000

3500

4000

4500

5000

Energy (μJ)

EOFF

Fig. 15 - Typ. Switching Time vs. RG

TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V

025 50 75 100 125

RG (Ω)

100

1000

Swiching Time (ns)

tdOFF

Fig. 18 - Typical Gate Charge vs. VGE

ICE = 48A; L = 600μH

0 255075100

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

VCES

= 300V

VCES

= 400V

8 1012141618

VGE (V)

Time (μs)

100

150

200

250

300

350

400

Current (A)

Isc

Tsc

Fig. 16 - VGE vs. Short Circuit

VCC = 400V; TC = 25°C

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Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

Fig. 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

Fig 19. Maximum Diode Repetitive Forward

Peak Current vs. Case Temperature

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

Ci i/Ri

Ci= τi/Ri

τC

τ4

R4Ri (°C/W) τi (sec)

0.0248 0.000014

0.0652 0.000050

0.1537 0.001041

0.2065 0.013663

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z thJC ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

Ci i/Ri

Ci= τi/Ri

τC

τ4

R4Ri (°C/W) τi (sec)

0.0400 0.000030

0.7532 0.000717

0.8317 0.004860

0.3766 0.036590

25 50 75 100 125 150 175

Case Temperature (°C)

100

120

140

160

Repetitive Peak Current (A)

D=0.5

D=0.2

D=0.1

Square Pulse,

f = 20KHz

D = t/T

T = 50us

Fig 20. Typical Gate Threshold Voltage

(Normalized) vs. Junction Temperature

25 50 75 100 125 150 175

TJ , Temperature (°C)

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VGE(th),

Gate Threshold Voltage (Normalized)

IC = 1.4mA

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VC C

DUT

80 V DUT

480V

DUT

360V

VCC

DUT

R =

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit

C f orce

400μH

G f orce DUT

D1 10K

C sense

0.0075μ

E sense

E force

Fig.C.T.6 - BVCES Filter Circuit

VCC

DIODE CLAMP /

DUT

DUT /

DRIVER

- 5V

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Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

-100

100

200

300

400

500

600

700

-0.40 0.10 0.60 1.10

Time(µs)

(V)

-20

100

120

140

OFF

Loss

5% V

5% I

90% I

-100

100

200

300

400

500

600

-5.00 0.00 5.00 10.00

time (µS)

(V)

-100

100

200

300

400

500

600

(A )

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TO-247AC Part Marking Information

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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TO-247AD Part Marking Information

TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 07/09

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/