VS-ST1200C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 1650 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case K-PUK (A-24) * High profile hockey PUK * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS K-PUK (A-24) * DC motor controls * Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 1650 A VDRM/VRRM 1200 V, 1400 V, 1600 V, 1800 V, 2000 V VTM 1.73 V IGT 100 mA TJ -40 C to +125 C Package K-PUK (A-24) Circuit configuration Single SCR * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 3080 A 25 C 30 500 60 Hz 32 000 50 Hz 4651 60 Hz 4250 Typical TJ UNITS 1650 50 Hz VDRM/VRRM tq VALUES A kA2s 1200 to 2000 V 200 s -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1200C..K VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 Revision: 27-Sep-17 Document Number: 94394 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms Maximum for fusing I2t A C 3080 No voltage reapplied 30 500 100 % VRRM reapplied 25 700 No voltage reapplied 32 000 Sinusoidal half wave, initial TJ = TJ maximum 4651 4250 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 46 510 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.01 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.21 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.19 Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 VTM IH Typical latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 3000 High level value of threshold voltage Maximum holding current A 26 900 Low level value of threshold voltage Maximum on-state voltage UNITS 55 (85) 3300 t = 8.3 ms I2t VALUES 1650 (700) 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 200 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 27-Sep-17 Document Number: 94394 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger TYP. 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 V 200 - TJ = 25 C 100 200 50 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 C TJ = 125 C VGD A 20 TJ = -40 C TJ = -40 C DC gate voltage not to trigger W 5.0 VGT IGD UNITS 3.0 TJ = TJ maximum, tp 5 ms IGT DC gate current not to trigger MAX. TJ = TJ maximum, tp 5 ms TJ = 125 C DC gate voltage required to trigger VALUES TEST CONDITIONS TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TJ -40 to 125 TStg -40 to 150 RthJ-hs Maximum thermal resistance, case to heatsink TEST CONDITIONS RthC-hs DC operation single side cooled 0.0.42 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled K/W 0.003 Mounting force, 10 % Approximate weight Case style C See dimensions - link at the end of datasheet 24 500 (2500) N (kg) 425 g K-PUK (A-24) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.003 0.003 0.002 0.002 120 0.004 0.004 0.004 0.004 90 0.005 0.005 0.005 0.005 60 0.007 0.007 0.007 0.007 30 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94394 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series 130 Vishay Semiconductors ST1200C..K Series (Single Side Cooled) RthJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 30 60 70 90 60 120 180 50 40 0 200 400 600 800 1000 1200 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 130 ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 80 Conduction Period 70 60 50 30 60 90 40 30 20 120 180 0 110 100 90 80 Conduction Period 70 60 30 50 60 90 120 180 40 30 20 0 400 800 1200 DC 1600 2000 4000 180 120 90 60 30 RMS Limit 3500 3000 2500 2000 1500 1000 Conduction Angle 500 ST1200C..K Series T J = 125C 0 0 Average On-state Current (A) 110 100 90 Conduction Angle 80 70 30 60 60 50 90 40 30 0 400 800 1200 120 180 1600 800 1200 1600 2000 2000 Fig. 5 - On-State Power Loss Characteristics Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 130 3600 Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 DC 1800 2400 3000 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 600 1200 5000 DC 180 120 90 60 30 4000 3000 RMS Limit 2000 Conduction Period 1000 0 ST1200C..K Series TJ = 125C 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94394 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series 28000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 26000 24000 22000 20000 18000 16000 ST1200C..K Series 14000 12000 1 10 100 32000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 28000 No Voltage Reapplied 26000 Rated VRRM Reapplied 30000 24000 22000 20000 18000 16000 14000 ST1200C..K Series 12000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 1000 TJ = 25C TJ = 125C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 0.01 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) 0.001 0.001 ST1200C..K Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94394 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1200C..K Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (a) (b) Tj=-40 C VGD Tj=25 C 1 Tj=125 C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) (2) (3) IGD Device: ST1200C..K Series 0.1 0.001 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 120 0 C 20 K 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code: code x 100 = VRRM (see Voltage Ratings table) 7 - K = PUK case K-PUK (A-24) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 9 - 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95081 Revision: 27-Sep-17 Document Number: 94394 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors K-PUK (A-24) DIMENSIONS in millimeters (inches) Creepage distance: 28.88 (1.137) minimum Strike distance: 17.99 (0.708) minimum 1 (0.04) MIN. 2 places 47.5 (1.87) DIA. MAX. 2 places C G Pin receptable AMP. 60598-1 27.5 (1.08) MAX. Note: A = Anode C = Cathode G = Gate A 67 (2.6) DIA. MAX. 20 5 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95081 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: ST1200C12K0P ST1200C12K1 ST1200C14K0P ST1200C16K0P ST1200C16K1 ST1200C16K1L ST1200C18K0L ST1200C18K0P ST1200C18K1 VS-ST1200C20K0L ST1200C20K0LP ST1200C20K0P ST1200C20K1 ST1200C20K1P ST1200C12K0 ST1200C14K0 ST1200C16K0 ST1200C18K0 ST1200C20K0 VS-ST1200C20K0 VS-ST1200C14K0 VS-ST1200C12K0 VS-ST1200C16K0 VS-ST1200C18K0