VS-ST1200C..K Series
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Phase Control Thyristors
(Hockey PUK Version), 1650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case K-PUK (A-24)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 1650 A
VDRM/VRRM 1200 V, 1400 V, 1600 V, 1800 V, 2000 V
VTM 1.73 V
IGT 100 mA
TJ-40 °C to +125 °C
Package K-PUK (A-24)
Circuit configuration Single SCR
K-PUK (A-24)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
1650 A
Ths 55 °C
IT(RMS)
3080 A
Ths 25 °C
ITSM
50 Hz 30 500 A
60 Hz 32 000
I2t50 Hz 4651 kA2s
60 Hz 4250
VDRM/VRRM 1200 to 2000 V
tqTypical 200 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST1200C..K
12 1200 1300
100
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
VS-ST1200C..K Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
1650 (700) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 3080
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
30 500
t = 8.3 ms 32 000
t = 10 ms 100 % VRRM
reapplied
25 700
t = 8.3 ms 26 900
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
4651
kA2s
t = 8.3 ms 4250
t = 10 ms 100 % VRRM
reapplied
3300
t = 8.3 ms 3000
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 46 510 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.01
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.21 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.19
Maximum on-state voltage VTM Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.9
μs
Typical turn-off time tqITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
VS-ST1200C..K Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 16 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 1.4 -
VTJ = 25 °C 1.1 3.0
TJ = 125 °C 0.9 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.0.42
K/W
DC operation double side cooled 0.021
Maximum thermal resistance,
case to heatsink RthC-hs
DC operation single side cooled 0.006
DC operation double side cooled 0.003
Mounting force, ± 10 % 24 500
(2500)
N
(kg)
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet K-PUK (A-24)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.003 0.003 0.002 0.002
TJ = TJ maximum K/W
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
VS-ST1200C..K Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30°
60°
90°
120°
180°
Conduction Angle
ST1200C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
DC
30°
60°
90°
120°
180°
Conduction Period
ST1200C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
30° 60° 90° 120° 180°
Conduction Angle
ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 600 1200 1800 2400 3000 3600
DC
30°
60° 90°
120° 180°
Conduction Period
ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
0
500
1000
1500
2000
2500
3000
3500
4000
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST1200C..K Series
T = 125°C
J
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
0
1000
2000
3000
4000
5000
0 600 1200 1800 2400 3000 3600
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST1200C..K Series
T = 125°C
J
VS-ST1200C..K Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
12000
14000
16000
18000
20000
22000
24000
26000
28000
11010
0
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
ST1200C..K Series
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
32000
0.01 0.1 1
Versus Pulse Train Duration. Control
Maximum Non Repetitive Surge Current
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Of Conduction May Not Be Maintained.
ST1200C..K Series
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0.5 1 1.5 2 2.5
3
T = 25°C
J
T = 125°C
J
ST1200C..K Series
VS-ST1200C..K Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95081
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Rectangular gate pulse
(3)(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
Device: ST1200C..K Series
- Thyristor
1-Vishay Semiconductors product
2
-Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
9
8
- Critical dV/dt:
5
- Voltage code: code x 100 = VRRM (see Voltage Ratings table)
6
- K = PUK case K-PUK (A-24)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 120 0 C 20 K 1 -
Outline Dimensions
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K-PUK (A-24)
DIMENSIONS in millimeters (inches)
74.5 (2.9) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
4.75 (0.2) NOM.
44 (1.73)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
Pin receptable
AMP. 60598-1
1 (0.04) MIN.
2 places 47.5 (1.87) DIA. MAX.
2 places
27.5 (1.08) MAX.
67 (2.6) DIA. MAX.
C
G
ANote:
A = Anode
C = Cathode
G = Gate
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