The leadless chip carrier (LCC) package represents the
logical next step in the continual evolution of surface
mount technology. Desinged to be a close replacement
for the TO-39 package, the LCC will give designers the
extra flexibility they need to increase circuit board density.
International Rectifier has engineered the LCC package
to meet the specific needs of the power market by
increasing the size of the bottom source pad, thereby
enhancing the thermal and electrical performance. The
lid of the package is grounded to the source to reduce
RF interference.
01/27/15
www.irf.com 1
LCC-18
Product Summary
Part Number BVDSS RDS(on) ID
IRFE230 200V 0.40Ω 5.5A
Features:
nSurface Mount
nSmall Footprint
nAlternative to TO-39 Package
nHermetically Sealed
nDynamic dv/dt Rating
nAvalanche Energy Rating
nSimple Drive Requirements
nLight Weight
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U
HEXFET® TRANSISTORS
JANTXV2N6798U
SURFACE MOUNT (LCC-18)
REF:MIL-PRF-19500/557
IRFE230
200V, N-CHANNEL
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 3.5
IDM Pulsed Drain Current À22
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á110 mJ
IAR Avalanche Current À5.5 A
EAR Repetitive Avalanche Energy À2.5 mJ
dv/dt Peak Diode Recovery dv/dt Â6.3 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range °C
Pckg. Mounting Surface Temp. 300 (for 5 S)
Weight 0.42 (typical) g
A
PD-91715C
IRFE230, JANTX2N6798U
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 5.0
RthJ-PCB Junction to PC Board — — 19 Soldered to a copper clad PC board
°C/W
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.40 VGS = 10V, ID = 3.5A Ã
Resistance — — 0.46 VGS = 10V, ID = 5.5A Ã
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 3.4 — — S VDS = 15V, IDS = 3.5A Ã
IDSS Zero Gate Voltage Drain Current — — 25 VDS = 160V, VGS = 0V
— — 250 VDS =160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 42 VGS = 10V, ID = 5.5A,
Qgs Gate-to-Source Charge — — 5.3 nC VDS =100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 28
td(on) Turn-On Delay Time — — 30 VDD = 100V, ID = 5.5A,
trRise Time — — 50 VGS = 10V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 50
tfFall Time — — 40
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 740 VGS = 0V, VDS = 25V
Coss Output Capacitance — 240 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 74 —
nA
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 5.5
ISM Pulse Source Current (Body Diode) À—— 22
VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 5.5A, VGS = 0V Ã
trr Reverse Recovery Time — — 500 ns Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 6.0 µC VDD ≤ 50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier website.
www.irf.com 3
IRFE230, JANTX2N6798U
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
456789
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
5.5A
IRFE230, JANTX2N6798U
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
400
800
1200
1600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40 50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.5A
V = 40V
DS
V = 100V
DS
V = 160V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
100µs
DC
OPERATION IN THIS AREA LIMITED
BY R DS(on)
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IRFE230, JANTX2N6798U
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFE230, JANTX2N6798U
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
10V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 2.5A
3.5A
BOTTOM 5.5A
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IRFE230, JANTX2N6798U
Footnotes:
 ISD ≤ 5.5A, di/dt ≤99A/µs, VDD ≤ 200V,
TJ ≤ 150°C, Suggested RG =7.5 Ω
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-18
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, Starting TJ = 25°C, L= 7.3mH
Peak IAS = 5.5A, VGS =10V, RG= 25Ω
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2015
