MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
DESCRIPTION: Designed for general-purpose RF amplifier applications,
such as; pre-drivers, Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 20 Vdc
VCBO Collector-Base Voltage 40 Vdc
VEBO Emitter-Base Voltage 2.0 Vdc
ICCollector Current 400 mA
Thermal Data
PDTotal Device Dissipation @ TC = 25ºC
Derate above 25ºC1.5
12.5 Watts
mW/ ºC
Tstg Storage Temperature -65 to + 150 ºC
RθJA Thermal Resistance, Junction to Ambient 125 ºC/W
SO-8
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
• Low Voltage Version of MRF3866
• Maximum Available Gain – 20dB(typ) @ 200MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 20 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 40 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.0 - - Vdc
ICEO Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc) - - .02 mA
(on)HFE DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 360 mAdc, VCE = 5 Vdc) 10
5.0 -
-200
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mA) 60 -mVdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) -1.3 -GHz
Cob Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz) --3.4 GHz
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
GU max Maximum Unilateral Gain
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz 16 18 -dB
MAG Maximum Available Gain
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz 18 20 -dB
|S21|2Insertion Gain (calculated)
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz 12 14 -dB
Table 1. Common Emitter S-Parameters, @ VCE = 12 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
50 .672 -145 20.15 112 .021 45 .447 -59
100 .721 -163 10.78 96 .026 44 .271 -67
200 .743 -174 5.37 85 .037 54 .199 -72
500 .768 170 2.18 63 .070 59 .264 -86
750 .775 161 1.53 48 .096 62 .356 -98
1000 .778 152 1.07 36 .122 65 .437 -109
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
Efficiency (%)
Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection Guide
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866ANPN 400 1 10 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 6 12 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Ftau (MHz)
Ccb
(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 2 70 400
TO-39 MRF544 NPN 13.5 1500 70 400
RF (LNA / General Purpose) Selection Guide
2
1
2
3
4
3
4
1
4
8
RF Low Power PA, LNA, and General Purpose Discrete Selector GuideRF Low Power PA, LNA, and General Purpose Discrete Selector Guide
MRF4427.PDF 4-24-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF4427, R1, R2
.
1. 4.
8. 5.
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
