___7964142 SAMSUNG 5 SEMICONDUCTOR INC __.. 98D 05104 DD T34%-493 [a DEG ?3b4142 oooszo4 y we ES NGHANNEL . IRF250/251/252/253 - POWER MOSFETS FEATURES Low Rpsjon) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance . Extended safe operating area Improved high temperature reliability TO-3 package (High current) TO-3 PRODUCT SUMMARY Part Number Vos Roston) Ib IRF250 200V 0.0852 380A IRF251 150V | 0.0852 | 30A , rit G - IRF252 200V- | 0.128 265A IRF253 150V 0.129 25A MAXIMUM RATINGS Characteristic Symbol IRF250 IRF251 IRF252 IRF 253 Unit Drain-Source Voltage (1) Voss 200 150 200 150 Vdc Drain-Gate Voltage (Res=1.0MQ) (1) Voer 200 150 200 150 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain, Current Tc=25C Ip 30 30 25 25 Adc Continuous Drain Current Tc=100C - Ib 19 19 16 16 Adc Drain CurrentPulsed (3) : lpm 120 120 100 100 Adc Gate CurrentPulsed lam , +1.5 Ade Total Power Dissipation @ Tc=25C Pp 150 Watts Derate above 25C . 1.2 Wie Operating and Storage Junction Temperature Range Ty, Tstg 55 to 150 C Maximum Lead Temp. for Soldering Purposes, 1/8 from case for & seconds Th 300 c Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300s, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature GE samsunc SEMICONDUCTOR 103__ 98D 05105. 7964142 SAMSUNG SEMICONDUCTOR INC _DT3VB j _ MSUNG _S' i ye te Tee .-7 - - : 46 DER PWb4i4e ooos5105 & i Perera ees ae ne ne om N-CHANNEL IRF250/251/252/253 . POWER MOSFETS ELECTRICAL CHARACTERISTICS (t=25c unless otherwise specified) - Characteristic Symbol] Type |Min| Typ Max Units Test Conditions | IRF250].. . IRF252 200) ~ V iVes=0V | * {Drain-Sourc Breakdown BVpss : t | Voltage IRF251 inF253/12] | | V {lo=250uA | Gate Threshold Voltage Vesith) | ALL {2.0} | 4.0 | .V |Vps=Ves, lp=250uA J Gate-Source Leakage Forward] lass ALL | | + 100] nA |Veg=20V ' Gate-Source Leakage Reverse| lass .| ALL | | |-100] nA Vas=20V Zero Gate Voltage loss | ALL LO} 250 | uA |Vos=Max. Rating, Vas=O0V - | Drain Current | | 1000) yA |Vps=Max. Ratingx0.8, Ves=OV, Te=125C!- : I 0 I On-State Drain- iRezet 30; | | A n-state Drain-Source Ion) : : Vps>lp(on) XRogcon) max. Vas= 10V Current (2) IRF252 inFa53| ] ~ | ~ | A] IRF250) _/0.07 |0.088/ 9 . - Static Drain-Source On-State IRF2514 oo _ Rosjon) : Vas=10V; Ip=16A . Resistance (2) IRF252 : iRF253| |9-09 0.120] 2 Forward Transconductance (2)| gts ALL /8.0/12.5| B{Vos>Ipjon)XRogiton) max., [D=16A Input Capacitance - Ciss ALL | (2640/3000! pF . Output Capacitahce Coss ALL | | 800; 1200] pF Vas=OV, Vos=25V, f=1,.0MHz Reverse Transfer Capacitance! Cryss ALL | | 300] 500 | pF Turn-On Delay Time taony) | ALL |} | | 35 | ns Rise Time t | ALL || | 400 | ns {00=0.5BVoss, lbD=16A, Zo=4.7 9 (MOSFET switching times are essentially Turn-Off Delay Time tao | ALL | | | 125 | ns independent of operating temperature. ) t Fall Time : tt ALL | |] | 100 | ns , Total Gate Charge . (Gate-Source Plus Gate-Drain)| Ga | ALL | | 88 | 120 | AC Iy.. tov, Ip=a8A, Vos=0.8 Max. Rating Gate-Source Charge Qos a. || 4a _ aC (Gate charge is essentially independent of \ hahaa) operating temperature. ) Gate-Drain (Miller) Charge | Qga ALL |}j; 50/ | nc THERMAL RESISTANCE Junction-to-Case . Rime | ALL | } | 0.83 | KW , ; Cas-to-Sink Rines ALL | ~ | 0.1 | KAW |Mounting surface flat, smooth, and greased Junction-to-Ambient Riya | ALL | f| 30 | K/W |Free Air Operation Notes: (1) Tj=25C to 160C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature GE sausunc SEMICONDUCTOR _. 104 {qa pe ff raeyiy2 ooos1os 3 govern me IRF250/251/252/253 | _ Z964142 | _SAMSUNG SEMICONDUCTOR ING 38D_ 05106 __ Dt: 3). 13 N-CHANNEL POWER MOSFE Ts SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbol| Type |Min| Typ | Max [Units Test Conditions , mr25o| | _ | ao | a Continuous Source Current ts IRF251 . Body Diod: . (Body Diode) fAF262; | _ + 25 | A |Modified MOSFET symbol : . IRF253 . . : showing the integra! IRF250} _ | _ | 490] a |reverse P-N junction rectifier Pulse Source Current Ism IRF251 . _ |(Body Diode) (3) " HIRF2521 | | yoy |g 1 IRF253 . \ : nears |~ | 20] V lTc=25C, Is=30A, Vas=0V Diode Forward Voltage (2) Vsp IRF252 lRF253| 7 | 7 1.8 Vi |To=28C, Is=25A, Vas=OV Reverse Recovery Time tr ALL | | 750 - ns | Ty=150C, Ie=30A, dle/dt=100A/ps Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, (3) Repetitive rating: Pulse width limited by max. junction temperature 60 Boys Puse Test 2 cod & < E =z w ce ce = ao Zz q a a 4 o 10 20 40 50 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS} Typical Output Characteristics a we & 3 & 2 a 7 o z j 4 0.4 08 1.2 _ 16 Vos, ORAIN-TO-SQURCE VOLTAGE (VOLTS) - Typical Saturation Characteristics 20 Ip, DRAIN CURRENT (AMPERES) tp, DRAIN CURRENT (AMPERES) 1 Duty Cycle<2% 3 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics 1S UMITED: T= iso 8a 2 6 10 20 0 100 200 500 1000 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area ce SAMSUNG SEMICONDUCT OR 1057964142 SAMSUNG SEMICONDI ... 98D_O5107 _ 98 Deg escyiue ooosic7 o Of: "NL CHANNEL IRF250/251/252/253 POWER MOSFETS ~ 9 a ZthactWRinscs NORMALIZED EFFECTIVE TRANSIENT ce z > e Ww & g g 02 4 2 w = 01 at Z oo & t = - 1 Duty Factor. Dat 0.02 Per Unt Base =P 20 83 Deg CAV TarTe=Pou Ze tt) 5 5 2 5 4 5 107 2 5 1 2 5 10 t1. SQUARE WAVE PULSE DURATION (SECONDS) . Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration g & @ = - < & = a 5 wy . g & > < 3 5 z 2B = z & a 3 8 = # a i 4 = 5 g 10 20 30 40 0 1 3 4 5 6 i . fp, DRAIN CURRENT (AMPERES) Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS} Typical Transconductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 25 = u 2.0 8 1.05 Ls N a 4 z S 095 2 1.0 Os BVnss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 ~40 0 40 80 120 160 -40 0 40 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Ve. Temperature : Normalized On-Resistance Vs. Temperature te sawsune SEMICONDUCTOR . 106 _DT 733 : meee age AO ey~ IRF250/251/252/253 20 16 N C,CAPACITANCE (pF) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) 9 10 20 30 40 Vpbs, ORAIN-TO-SOURCE VOLTAGE {VOLTS) Typical Capacitance Vs. Drain to Source Voltage Rosjon}, DRAIN-TO-SOURCE ON RESISTANCE (OHMS) Ip, DRAIN CURRENT (AMPERES) 0.06 -0 Ip, DRAIN CURRENT (AMPERES) \ Typical Or-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) 20. 40 60 806 100 120 440 160 Ta, AMBIENT TEMPERATURE (C) - Power Vs. Temperature Derating Curve PIBYR4Ye O905108 4 i 80 0 28 7964142 SAMSUNG SEMICONDUCTOR INC __ ___980 05108 pT-39-13 ; N-CHANNEL - ~ POWER MOSFETS 160, IRF250, 56 - 84 412 140 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage a0 60 90 120 150 25 50 75 100 125 Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature ce SAMSUNG SEMICONDUCTOR 107