MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222AT Features * * * * Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT2907AT) A Ultra-Small Surface Mount Package C Available in Lead Free/RoHS Compliant Version (Note 2) Mechanical Data * * * * * * * * * B E Typ 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 3/4 3/4 0.50 H G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 M N Moisture Sensitivity: Level 1 per J-STD-020C J L D Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 C Terminal Connections: See Diagram Marking (See Page 2): 1P All Dimensions in mm Ordering & Date Code Information, See Page 2 Weight: 0.002 grams (approx.) Maximum Ratings Max A G K Terminals: Solderable per MIL-STD-202, Method 208 Min D Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 B C TOP VIEW Dim B E @ TA = 25C unless otherwise specified Symbol MMBT2222AT Unit Collector-Base Voltage Characteristic VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V IC 600 mA Pd Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead DS30268 Rev. 5 - 2 1 of 4 www.diodes.com MMBT2222AT a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 3/4 V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 10mA, IC = 0 ICEX 3/4 10 nA VCE = 60V, VEB(OFF) = 3.0V IBL 3/4 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 3/4 3/4 3/4 3/4 3/4 3/4 IC = 100mA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 3/4 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 3/4 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 30 pF OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain 10V 10V 10V 10V 10V SMALL SIGNAL CHARACTERISTICS VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz fT 300 3/4 MHz Input Impedance hie 0.25 1.25 kW VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz Voltage Feedback Ratio hre 3/4 4.0 10-4 VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz Small-Signal Current Gain hfe 75 375 3/4 VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz Output Admittance hoe 25 200 mS VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz Noise Figure NF 3/4 4.0 dB VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0kHz Delay Time td 3/4 10 ns Rise Time tr 3/4 25 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 60 ns Current Gain-Bandwidth Product X SWITCHING CHARACTERISTICS Ordering Information Notes: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA (Note 4) Device Packaging Shipping MMBT2222AT-7 SOT-523 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT2222AT-7-F. Marking Information 1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 1PYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30268 Rev. 5 - 2 2 of 4 www.diodes.com MMBT2222AT 1000 250 200 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 150 100 TA = 125C 100 TA = -25C TA = +25C 10 50 VCE = 1.0V 1 0 0 100 1000 100 2.0 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve Cibo 10 5.0 Cobo 1.0 0.1 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 50 10 IC = 30mA IC = 1mA IC = 10mA 1.8 1.0 0.1 0.01 10 1 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region REVERSE VOLTS (V) Fig. 3 Typical Capacitance 0.5 1.0 IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 TA = -50C 0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1 0.1 200 VCE = 5V 0.9 TA = -50C 0.8 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 10 1 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current DS30268 Rev. 5 - 2 3 of 4 www.diodes.com 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current MMBT2222AT fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30268 Rev. 5 - 2 4 of 4 www.diodes.com MMBT2222AT