HARRIS SEMICOND SECTOR Gi HARRIS CMOS Quad 2-Input NAND Schmitt Triggers High-Voltage Types (20 Voit Rating) @ COD409386 consists of four Schmitt- trigger circuits. Each circuit functions as a two-input NAND gate. with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and negative- going signals. The difference between the positive voltage (Vp) and the negative valt- me 4302271 00397533 T= 5/-2/ YYE D 5 GRHHAS CD4093B Types Features: = Schmitt-trigger action on each input with no \ external components a4 @ Hysteresis voltage typically 0.9 V at al Vpp = 5 V and 2.3 Vat Vpp=10V @ Noise immunity greater than 50% No limit on input rise and fall times 3 4 Standardized, symmetrical output characteristics ct Bi 10 pk & o F ss4 te = 100% tested for quiescent current at 20 V = Maximum input current of 1 yA at 18 V g2CS-2348 FUNCTIONAL DIAGRAM over full package-temperature range, 100 nA at 18 Vand 25C = 5-V, 10-V, and 15-V parametric ratings = Meets all requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications io f ae "BY Series CMOS Devices age (Vjy) is defined as hysteresis voltage (Vj4) or Description of 'B Series C eviees (see Fig. 2). The C040988 types are supplied in 14-lead hermetic dual-in-line ceramic packages (D and F suffixes), 14-lead dual-in-line plastic = Monostable multivibrators package (E suffix),, and in chip form (H = Astable multivibrators suffix). a@ NAND logic Applications: RECOMMENDED OPERATING CONDITIONS For maximum reliability, nominal operating conditions should be selected so that operation is always within the following ranges. @ Wave and pulse shapers @ High-noise-environment systems CHARACTERISTIC |MIN.} MAX.JUNITS Supply-Voltage Range (T, = Fuil Package- Temp. Range) 3 18 Vv MAXIMUM RATINGS, Absolute-Maximum Values: OC SUPPLY-VOLTAGE RANGE, (Vpp) 45,842) O* a.) {> he Osreioun Voltages referenced to Vgg Terminal) 1... ere creccen cece sna nccneneee rere teres eeeeeneeeee -0.5V to +20V 26. 99312 (INPUT VOLTAGE RANGE, ALLINPUTS ... DGC INPUT CURRENT, ANY ONE INPUT ... POWER DISSIPATION PER PACKAGE (Pp): * ave weuts PROTECTED BY CMOS PROTECTION NETWOARI For Ta = 55 to +160G ,,..,. . e For Tp = +1009 to +4259G. cece cece eee e tener ee cree decneeene Derate Linearity at 12mW/G to 200mW DEVICE DISSIPATION PER OUTPUT TRANSISTOR FOR Ta = FULL PACKAGE-TEMPERATURE RANGE (All Package Typas) ......-.6.0s-eseeeeereeee 100mW OPERATING-TEMPERATURE RANGE (Ta)... sce cece cece ee teen eee nnee tn ceneeeeereeceeee -55C to +1259C STORAGE TEMPERATURE RANGE stg) eee rrr -659C to +150C LEAD TEMPERATURE (DURING SOLDERING): At distance 1/16 + 1/32 inch (1.59 + 0.79mm) from case for 10S MAX ....... cee e reece recente enes +265C Ves 92CS-23381R1 Fig. t Logie diagram1 of 4 Schmitt triggers: Yoo vi ay tet Lap Yoo LE ORIVER Loan Yo Yu Yo Vx. Ya e- yw ouTpur inpuT c) Test setup CHARACTERISTIC 00 CHARACTERISTIC Veg r Logie 1* A yon o an a i b) Transfer characteristie I ra Ye oe 7. - * of 1 of 4 gates, s2cM-z3agar You s Sale -o ~--4- wy LE OUTPUT INPUT V5 REGION J ly REGION a} Definition of Vp Vip Vey OL veg 925-2 38a3R3 Fig. 2 Hysteresis definition, characteristic, and test setup. Fig. 2 Input and output characteristics. 3-214HARRIS SEMICOND SECTOR YYE D CD4093B Types STATIC ELECTRICAL. CHARACTERISTICS y402271 0037534 ? HAS CHARACTER- | CONDITIONS LIMITS AT INDICATED TEMPERATURES (C) ISTIC UNITS Vo | Vin |Yoo +25 *T tv) (vi } ivi l-ss |-40 [sas +125 [Min. | Typ, [MAx. Oui Device | - | 051 5] 1 1{ 30] 30f - 0.02] 1 Current, Ippo - foto! 1of 2 60 60 | - 0.02 uA Max. - form! is] 4 4{ 1207 1207 0.02] 4 - [0,20] 20; 20] 20] cool coo] 0.04] 20 Positive Trigger ~| a} 5] 22] 22] 22] 22] 22] 29] - Threshold Vottage| a 10 | 4.6 4.6 46 4.6 4.6 5.9] - Vp Min, -|a{1u5l]es] 68! 6a] self es] asl -~|b | 5]26] 26/ 26] 26] 26] 331 v -|b{ 10] s56/ s6/ se] sel se 7| = ~|b[6]63] 63f 63/ 63] 63!) oa] Vp Max. -{| a] s[36/ se] 36] 367 29] 3.6 ~|afiularoamfomy~omt 59 | 7.1 - | a] sfios| 108 | tos!) 18] 8.8 | 10.8 Vv =[ofosl 4 4 4 a| 33 [4 -{b]tolse2/ s2/ a2) e2| 7] a2 ~ | o | 15 ]i27] 127 | 127} 1277 9.4 112.7 Negative Trigger | ~[ @ | s[o09| o9 | 09 | o@ | o9 ro] Threshold Voltage] a 10 | 2.5 2.5 2.6 2.5 25 3.94 - Vn Min. [alti a 4 4 4 4 5.8 | Vv ~{o] sf14] 14] 1a] 14a] 14 23 | - ~| bj 0]34] a4f 34[ 34] a4 51] - -|b]5las] ae] ae] 4aa/ ae 73|- Vy Max. -~|{ aj] s|2s] 28[ 2ef 2a [ to | 28 -~{aj]wls2f s2{ sal s2) 3.9 1 5.2 ~| a] isj74af ra] 7a] 74a [- 5.8 | 7.4 Vv -|o7;] s[32] 32] a2] 32] 23} 3.2 ~}{b]t0fse/ 66] 66| 66] 5.1 | 66 ~|b]6lo6el o6 | o6 | o6 | 7.3 | 9.6 Hysteresis. Voltage |_ a 5] 03] 03 9.3 9.3 0.3 09} - Vu Min. -~fa]wots2} 12] 12f a2] iat a3] _ -|alisfiel ie] tel tel tel a6} Vv ~j}et s{o3sf os [ os [ o3 | oa[ a9] -~| bj tol 12} 12] ore] a2) oi2! aaf -~[b]is[tel te? ie! 16] 16) a6] Vu Max. -faf]sftel ie] ie] tel] 0.9 | 1.6 -][afiwl34] a4] 34] a4], 23 | 34 ~Ta [ils 6 5 5 | - a5[ 5 | y -~f{b]sfref tel ie | te | 09 | 1.6 -{[b fiol3a] 34] 34] 34 [_ 23 | 34 -]o [is] s 6 5 5 | - 36] 5 Input on terminals 1,5,8,42 or 2,6,9,13; other inputs to Voo- binpur Oa terminals 1 and 2, 5 and 6,8 and 9, ar 12 and $3; other inputs.to Vo. 3-215 T-5/-d) AMQIENT TEMPERATURE ORAIN CURRENT (Ig)ma > I - 2 z 3 $s 3 2 2 3 o wcs-2eaar Fig. 4 Typical current and voltage transfer characteristics. ALL OTHER y PACKAGE => InFuTs 10 oo IMPUT VOLTAGE tv) =v s2e8-2a620 Fig. Typical voltage transfer Characteristics as a function of temperature. ORAIN-TO-SOVACE VOLTAGE (Vogiv ST vast Fig. 6 Typical output love (sink) current characteristics. . ORAIH~TO-SOURCE VOLTAGE (Yp3i s2cr-ente Fig. 7 Minimum output tow {sink} current. characteristics. COMMERCIAL CMOS HIGH VOLTAGE ICsHARRIS SEMICOND SECTOR H4E D BM 4302271 0037535 9 BMHAS CD4093B Types STATIC ELECTRICAL CHARACTERISTICS (CONT'D) CHARACTER: CONDITIONS LIMITS AT INDICATED TEMPERATURES (C) istic UNITS Vo [Yin] po +25 (vy | (vi | tv) +55) f-40) F485) [+125 | MIN. | TYP. [ MAX. Output Low (Sink) |2-4/ 0.5] 5 | 064 | a1 | 042] 036] O51 1} Current, 0.510,10) 10 1.6 Ls 11 0.9 1.3 26] - lor Mio. tsjois| te] 42 4} 28] 24] 34[ asl - mA Output High 4.6]0,5.| 5 |-0.64 |-0.61 |-0.42 | -0.36 | -0.51 -1] - {Source} 2.51 0,5 5 -2 | -18 | -1.3 [-1.15] -16 | -3.2] - Current, 95]o.10/ 10 | -16 | -1.5 | -1.1] -o9] -1.3[ a6[ lop Min. 13.9/0,15| 15 | +4.2 -4 |] -28| -24] -34] -68] - Output Voltage ~ [05] 5 0.05 - 0 |0.05 Low-Level, - {0,10} to. 0.05 - 0 [0.05 Vou Max. - [ors] ts 0.05 - ofo05 | y Output Voltage ~ 105] 4.96 4.95 5] - High-Level, 10,10] 10 9,95 9,95 10} - Vou Min. Jos] 15 14.95 14.95 Input Current, tyty Max. - (0,18) 18} 201] #01 41 ti] - J410-5 +01 | uA DYNAMIC ELECTRICAL CHARACTERISTICS AtT a = 29C; Input t,, tp= 200s, Cy = 50 pF, Ay = 200kQ TEST CONDITIONS LIMITS CHARACTERISTIC - UNITS Vv, DD | tye. MAX. VOLTS ; Propagation Delay Time: 5 190 380 PHL 10 90 180 ns PLH 16 65 130 5 100 200 Transition Time, tTHL. 10 50 100 ns 'TLH 15 40 80 Input Capactance, Ci iy Any Input 5 7.5 pF TRANSITION TIME 7H. ATL An CS 40 y 100 LOAD CAPACITANCE (0) pI TCS 2d gaz Fig. 11 Typical transition time vs. load capacitance: LNPUT ON TER! MIN ALS OTHER INPUTS TIEO 12 OF 2.6,9,13; SUPPLY VOLTAGE (YopIV axs- Taye: . Fig. 12 Typical trigger threshald voltage vs. Yoo 3-216 Fig. 8 Typical output high (source) current HYSTERESIS T-S/-2\ ORAIN- TO+SOURCE VOLTAGE IpsIV. pebesbabaet ' TQ-SOURCE aaeg-zayza0y characteristics, ORAIN-TO-SOURCE VOLTAGE [osi-V vecg-zanzes Fig. 9 Minimum output high (source) current characteristics, suppuy (00) sacs-zuacana Fig. 10 Typical propagation delay time. vs, supply voltage. AMBIENT TEMPERATURE. SUPPLY VOLTAGE {o91- 9209-24832m Fig. 13 Typical per cent liysteresis. ys. supply vaitage. CURRENTIL OH = mA 5 a 2 6HARRIS SEMICOND SECTOR Ls i 3 : : : z 19% 1! 192 192 FREQUENCY {tt }-hHe 9205-24033 Fig. 14 Typical power dissipation vs. frequency characteristics. 00 r9 cournon SIGNAL n Yoo be R v, W3c04007A : 3 | , | oo vl | | SHS 174c040938 ie y, f00_ ss ves tee RC dn (eos) SOLER SREINA 100 pF SC $ Inf FOR TIME RANGE OF R ANO C GIVEN Sua < ty < a2cS- 23486 Fig. 17 Monostable multivibrator, IMP NOTE MEASURE INPUTS SEQUENTIALLY, TO GOTH Yop ANO Ys5 CONHECT ALL UNUSED INPUTS TO EITHER Yop OR Veg Yoo Vs ttt tf es-2AG2 Fig. 20 - input current test circuit. 2 s = & : 2 WUE D> BM 4302271 0037536 O BAHAS CD4093B Types LGAO CAPACITANCE SUPPLY VOLTAGE Lgg} #15 FREQUENCT {1} +100 RHE 0 103 108 RISE AMO FALL TIME Mette aecs-20asa Fig. 18 Typical power dissipation vs, rise and fall times. TO CONTROL SIGNAL OR Yop ria 144.0040938 % 3 Ys tase sol i) e rea SORNSASIMA 100 pF ECS lpr BOA THE RANGE OF A ANOC GIVEN 2pr<tat 92CS-23a@7a Fig. 18 Astable multivibrator. (TOP view) 9208-24455 TERMINAL ASSIGNMENT T-S5/-A | APPLICATIONS TO CONTROL SIGNAL OR Vp Yoo 7\~- - = = a0 f 3 Yoo - -- 2 JILL $s sg v4 cO40938 g2c5- 23865 FREQUENCY RANGE OF WAVE SHAPE Is FROM OC TO | MHz Fig. 16 Wave shaper. veo t INPUTS co) Yss yees-27agian Fig. 19 Quiescent device current test circuit. Yop R= 120KR SWITCH OR RELAY CONTACT. cD40038 Tf. 1" 0.001),.F Fig. 21 - Contact Debaucer COMMERCIAL CMOS 3 inch). 41-49 (1041-1245) 6 : te ton 3 = I0 25 Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. th B05- PaoT Grid graduations are in mils (10 92c8-35099 Dimensions and Pad Layout for CD4093BH 3-217 HIGH VOLTAGE ICs