FAIRCHILD SEMICONDUCTOR 84 De Pfsyeie74 ooazsan 2 &j 3469674 FAIRCHILD SEMICONDUCTOR 84D 27536 0D, Reuse re 35t ' FAIRCHILD 2N2710/FTSO2710 ~~ #4~ + NPN Small Signal High Speed Low A Schlumberger C j i chlumberger Company Power Saturating Switch Transistor t ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE i 2N2710 TO-18 Temperatures FTSO2710 TO-236AA/AB Storage Temperature ~65 C to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) \ Total Dissipation at 2N FTSO 25C Ambient Temperature 0.5 W 0.350 W* 25 C Case Temperature 1.2W Voltages & Currents Vceo Collector to Emitter Voltage 20V (Note 4) Vces Collector to Emitter Voitage 30 V Vceo Collector to Base Voltage 40 V Veso Emitter to Base Voltage 5.0 V lo Collector Current 500 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN |MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown 20 V le = 10 mA, le = 0 Voltage BVces Collector to Emitter Breakdown 30 Vv lc = 10 pA, Ip = 0 Voltage BVcso Collector to Base Breakdown 40 Vv Ic = 10 pA, le = 0 Voltage BVeso Emitter to Base Breakdown Voltage 5.0 v le = 10 pA, Io =0 leno Emitter Cutoff Current 1.0 pA Ves =3.0V, Io =0 Icao Collector Cutoff Current 30 nA | Vce = 20 V, le =0 (150C) 30 uA Voce = 20 V, Ta = 150C re DC Current Gain (Note 5) 40 Ic = 10 MA, Vce = 1.0 V 40 Ic = 50 mA, Vce = 1.0 V Vcetsan Collector to Emitter Saturation Voltage 0.25 Vv le = 10 mA, Ip = 1.0mMA 0.40 V ic = 50 mA, lp = 5.0 MA Vaeisat) Base to Emitter Saturation Voltage 0.90 Vv lc = 10 mA, Ip = 1.0 mA 1.30 Vv Ip = 50 mA, Ip = 5.0 mA NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200C and junction-to-case thermal resistance of 146 C/W (derating factor of 6.8 mW/C):; junction-to-ambient thermal resistance of 350 G/W (derating factor 2.8 mW/ C): (TO-236) junction-to-ambient thermal resistance of 357 G/W (derating factor of 2.8 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is towest. 5. Putse conditions: length < 300 us; duty cycle < 2%, and < 1.2 ms pulse duration. 6. For product family characteristic curves, refer to Curve Set T162 * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. Le 3-256FAIRCHILD SEMICONDUCTOR ay DE ff ayean74 0027534 oO 2N2904/5/6/7 T- 31-17 Fee LED PN2904/5/6/7 A Schlumberger Company FTS0O2904/5/6/7 PNP Small Signal General Purpose Amplifiers & Switches Vceo ... -40 V (Min) PACKAGE fre ... 40-120 (2N/PN/FTSO2904/6), 2N2904 TO-39 100-300 (2N/PN/FTSO2905/7) 2N2905 TO-39 * ton... 45s (Max) @ 150 mA, ton... 100 ns (Max) @ 150mA 2N2906 TO-18 * Complements ... 2N/PN/FTSO2218 Series, 2N2907 TO-18 2N/PN/FTSO2218A Series PN2904 TO-92 PN2905 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) PN2906 TO-92 PN2907 TO-92 Temperatures 2N PN/FTSO FTSO2904 TO-236AA/AB Storage Temperature -65C to 200C -55C to 150C FTSO2905 TO-236AA/AB Operating Junction Temperature 175C 150C FTSO2906 TO-236AA/AB FTSO2907 TO-236AA/AB Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2904/5 2N2906/7 26C Ambient Temperature 0.6 W 0.4W 25C Case Temperature 3.0 W 1.8 W Total Dissipation at PN FTSO 25 Ambient Temperature 0.625 W 0.350 W* 25 C Case Temperature 1.0 W Voltages & Currents 2N/PN2904 Vceo Collector to Emitter Voltage -40V (Note 4) Veso Collector to Base Voltage 60 V Veso Emitter to Base Voltage 5.0 V Io Collector Current 600 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 2N/PN2904/6 SYMBOL | CHARACTERISTIC MIN MAX TEST CONDITIONS Hre DC Current Gain (Note 5) 40 120 lc = 150 mA, Vce = -10 V 20 lc = 500 mA, Vee = 10 V 35 tc = 10 MA, Vee = 10 V 25 le = 1.0 MA, Vce =-10 V 20 Ile = 0.1 MA, Vee = -10 V NOTES: 1. These ratings are fimiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 G and junction-to-case thermal resistance of 58 3C/W (derating factor of 17.2 mW/C); junction-to-ambient thermal resistance of 202 C/W (derating factor of 3 42 mW/ C) for 2N2904 and 2N2905; junction-to-case thermal resistance of 97.3C/W (derating factor of 10.3 mW/C); junction-to-ambient thermal resistance of 437 C/W (derating factor of 2.28 mW/ C) for the 2N2906 and 2N2907. These ratings give a maximum junction resistance of 150 Cand junction-to-case thermal resistance of 125 CAV (derating factor of 8.0 mW/ C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/ C) for PN2904, PN2905, PN2906, and PN2907; (T0236) junction-to- ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys: duty cycle = 1% 6. For product family characteristic curves, refer to Curve Set T212. Package mounted on 99.5% alumina Bmm x 8mm x 0.6mm. 3-258FAIRCHILD SEMICONDUCTOR 3469674 FATRCHILD SEMICONDUCTOR by De ff) suecn74 d0e7534 e2 i - 84D 27539 2N2904/5/6/7 - PN2904/5/6/7 7-38-17 FTSO2904/5/6/7 D - ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 2N/PN2805/7 SYMBOL | CHARACTERISTIC MIN MAX TEST CONDITIONS nre DC Current Gain (Note 5) 7100 | 300 Ic = 150 MA, Vce = -10 V \ 30 Ic = 500 mA, Vee = 10 V | 75 lo = 10 MA, Vos = 10 V ' 50 lo = 1.0 MA, Voce = 10V . 35 Ic =0.1 MA, Vee = 10 V SYMBOL] CHARACTERISTIC MIN | MAX ;} UNITS TEST CONDITIONS BVeso Emitter to Base Breakdown Voltage 5.0 Vv Ic = 0, le = 10 pA BV cao Collector to Base Breakdown Voltage | 60 Vv lc = 10 pA, Ie = 0 Icex Collector Reverse Current 50 nA Voce = 30 V, Ves = 0.5 V Iceo Collector Cutoff Current 20 NA {| Vea = 50 V, fg =0 20 vA | Vea =50V, le=0, Ta= 150C lp Base Current 50 nA Vce = 30 V, Ves = -0.5 V Veeowuss | Collector to Emitter Sustaining Voltage | 60 Vv lc = 10 mA (pulsed), lp = 0 (Notes 4 & 5) Veetsan Collector to Emitter Saturation Voltage ~0.4 Vv Ic = 150 mA, lp = 15 MA (Note 5) -1.6 Vv ! = 500 mA, Is = 50 mA Vecisan Base to Emitter Saturation Voltage -1.3 Vv Ic = 150 mA, lp = 15 mA (Note 5) ~2.6 Vv lc = 500 mA, ig = 50 mA Cop Output Capacitance 8.0 pF Vos = 10 V, le = 0, f = 100 kHz Ci Emitter Transition Capacitance 30 pF Ves = ~2.0 V, tc = 0, f = 100 kHz Rte High Frequency Current Gain 2.0 lo = 50 MA, Vce = 20 V, f = 100 MHz ta Turn On Delay Time (test circuit no. 224 10 ns le =150 MA, Vec =-30V, Ins =15MA tr Rise Time (test circuit no. 224) 40 ns tc = 150 mA, Veo = -30 V, lai =la2 = 15 MA ts Storage Time (test circuit no. 225) 80 ns Io = 150 MA, Veo = -6.0 V, lai = 15 MA tt Fall Time (test circuit no. 225) 30 ns Io = 150 MA, Veo = -6.0 V, lar = leo = 15 MAFAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 84D 27540 D es 2N2904A/5A/6A/7A ee Sai PN2904A/S5A/G6A/7A 7-35-/7 A Schlumberger Company FTSO2904A/5A/6A/7A PNP Small Signal General Purpose Amplifiers & Switches Pp... 625 mW @ Ta = 25C (PN Series) PACKAGE Vceo ... -60 V (Min) 2N2904A TO-39 fire ... 40-120 (2N/PN/FTSO2904A/6A), 100-300 2N2905A TO-39 (2N/PN/FTSO2905A/7A) 2N2906A - TO-18 ton... 451s (Max) @ 150 mA, ton -.. 100 ns (Max) @ 150mA 2N2907A TO-18 Complements ... 2N/PN/FTSO2218 Series, PN2904A TO-92 2N/PN/FTSO2218A Series PN2905A TO-92 PN2906A TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) PN2907A TO-92 FTSO2904A TO-236AA/AB Temperatures 2N PN/FTSO . FTSO2905A TO-236AA/AB Storage Temperature -65 C to 200 C -55C to 150C FTSO2906A TO-236AA/AB Operating Junction Temperature 175C 150C FTSO2907A TO-236AA/AB Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2904/5A 2N2806/7A 25C Ambient Temperature 0.6 W 0.4 W 25C Case Temperature 3.0W 1.8W Total Dissipation at PN FTsO 25C Ambient Temperature 0.625 W 0.350 W* 25C Case Temperature 1.0 W Voltages & Currents 2N/PN Veeco Gollector to Emitter Voltage -40V (Note 4) Veso Collector to Base Voltage 60 V Veso Emitter to Base Voltage -5.0V le Collector Current 600 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) ay DE ayese74 ooazsuo 9 Ef. 2904A/2906A SYMBOL | CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS hee DC Current Gain (Note 5) 40 120 Io = 150 MA, Vee = -10 V 40 ic = 500 mA, Vce = -10 V 40 fe = 10 MA, Vee = 10V 40 lc = 1.0 mA, Vee = 10V 40 lo =0.1 mA, Vce =-10V NOTES: 14. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations, 9. These ratings give a maximum junction temperature of 200 C and junction-to-case thermal resistance of 58.3 C/W (derating factor of 17.2mW/C); junction-to-ambient thermal resistance of 202 C/W (derating factor of 3.42 mW/? C) for 2N2904A and 2N2905A; junction-to-case thermal! resistance of 97.3 C/W (derating factor of 10.3 mW/? GC); junction-to-ambient thermal resistance of 437 C/W (derating factor of 2.28 mW/? GC) for the 2N2806A and 2N2907A. These ratings give a maximum junction resistance of 150C and junction-to-case thermal resistance of 125 O/W (derating factor of 8.0 mW/ C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/ C) for PN2904A, PN2905A, PN2908A, and PN2907A; (TO-236) Junction-to-ambient thermal! resistance of 357 C/W (derating factor of 2.8 mW/?C}. 4, Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ps; duty cycle = 1%. 6. For product famlly characteristic curves, refer to Curve Set T212. Package mounted on 99.5% alumina 8mm x8mmx0.6 mm. de CS 3-260 4 A nn net34 FAIRCHILD SEMICONDUCTOR 69674 FAIRCHILD SEMICONDUCTOR a4 Def sye9e74 ooazsua o LU TOR 84D 27541 2N2904A/SA/6A/7A PN2904A/5A/6A/7A FTSO2904A/5A/6A/7A T- 35-49 D-= ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 2905A/2907A SYMBOL | CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS i hee DC Current Gain (Note 5) 100 | 300 lc = 150 MA, Vce = -10 V j 50 le = 500 mA, Voce = -10 V : 100 Io = 10 MA, Vee = -10 V 100 lc = 1.0 MA, Vee =10V 75 t = 0.1 mA, Vce = -10V BVezo Emitter to Base Breakdown Voltage ~-5.0 Vv le = 0, le = 10 pA BVcxo Collector to Base Breakdown Voltage | -60 Vv Io = 10 pA, le = 0 Icex Collector Reverse Current 50 nA Voce = 30 V, Ves = 0.5 V lon Collector Cutoff Current 10 nA Ves = 50 V, le = 0 10 pA | Vea =5OV, le = 0, Ta = 150C ts Base Current 50 nA Vee = -0 V, Ves = -0.5 V Veeotsus | Collector to Emitter Sustaining Voltage | 40 Vv Ic = 10 mA (pulsed), ls = 0 (Notes 4 & 5) Veetsan Collector to Emitter Saturation Voltage 0.4 Vv Ie = 150 mA, Is = 15 mA (Note 5) 1.6 Vv le = 500 mA, Is = 50 mA Vectsab Base to Emitter Saturation Voltage -1.3 Vv le = 150 mA, la = 15 MA (Note 5) 2.6 Vv Ic = 500 mA, lp = 50 mA Con Output Capacitance 8.0 pF Ves = 10V, le = 0, f = 100 kHz Civ Emitter Transition Capacitance 30 pF Ves = 2.0 V, lo = 0, f = 100 kHz Nte High Frequency Current Gain 2.0 le = 50 mA, Vee = 20 V, f = 100 MHz ta Turn On Delay Time (test circuit no. 224 10 ns Ic = 150 mA, Voc = 30 V, lax = 15 MA tr Rise Time (test circuit no. 224) 40 ns Io = 150 MA, Veo = -30 V, lat = lee =15mA te Storage Time (test circuit no. 225) 80 ns le = 150 MA, Veco = 6.0 V, le, = 15 mA tr Fall Time (test circuit no. 225) 30 ns Ic = 150 mA, Vcc = -6.0 V, le = la2 =15mA ton Turn On Time (test circuit no. 224) 45 ns lc = 150 MA, Vee = 3.0 V, le. = 15 MA tott Turn Off Time (test circuit no. 225) 100 ns lc = 150 MA, Voc = 6.0 V, les = leo = 15 MAon en nemeeneeery . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27544 D =s nnn aA - 2 3 as 2N3019/2N3020 7 ?7- Pe | Oe NPN Small Signal General Purpose Amplifiers Vceo ... 80 V (Min) PACKAGE Voeway -.. 0.5 V (Max) @ 500 mA 2N3019 TO-5 hre ... 100-300 @ 150 mA (2N3019), 50 (Min) @ 100 nA 2N3020 TO-5 & 500 mA (2N3019) Complements ... 2N4031, 2N4033 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 0.8 W 25 C Case Temperature 5.0 W Voltages & Currents Vceo Collector to Emitter Voltage s0V Ves Collector to Base Voltage 140 V Ves Emitter to Base Voltage 7.0V Ic Collector Current 1.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 5) 3019 3020 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown! 80 80 Vv lc = 30 mA, lp = 0 Voltage (Note 4) BVceo Collector to Base Breakdown 140 140 Vv le = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown 7.0 7.0 Vv le = 100 pA, Ie =O Voltage leso Emitter Cutoff Current 10 10 nA Ves = 5.0 V, Ic =0 kao Collector Cutoff Current 10 10 nA Ves = 90 V, le = 0 10 10 BA Vea = 90 V, le =0, Ta = 150 C hee DC Current Gain (Note 4) 50 30 100 Io = 0.1 MA, Vee = 10 V 90 40 120 le = 10 MA, Vee = 10 V 100 | 300 40 120 le = 150 mA, Vee = 10 V 40 Ic = 150 mA, Vee = 10 V, Ta = 56C 50 30 100 lc = 500 mA, Voce = 10 V 15 15 io = 1.0 A, Vee = 10V NOTES: These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 200 C and junction-to-case thermal resistance of 35 C/W (derating factor of 28.6 mW/? C); junction-to-ambient thermal resistance of 217 C/W (derating factor of 4.6 mW/C). Pulse conditions: length < 300 ps; duly cycle < 1%. For product family characteristic curves, refer to Curve Set 7149. 3-264 MFAIRCHILD SEMICONDUCTOR ay DE sub5b74 poe7suy 4 TtFALRCHILD SEMICONDUCTOR eterepninen 3469674 FAIRCHILD SEMICONDU By DE fj ayeab74 OOe7545 4 a CTOR 2N3019/2N3020 84D 27545 D h.a9-23 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 5) i 3019 3020 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX = | UNITS TEST CONDITIONS Veetsat Collector to Emitter Saturation 0.2 0.2 Vv Ic = 150 mA, lp = 15 MA Voltage (Note 4) 0.5 05 Vv Ic = 500 mA, Ip = 50 mA Veewan Base to Emitter Saturation 1.1 14 Vv lc = 150 mA, lp = 15 MA Voltage (Note 4) Cop Output Capacitance 12 12 pF Ves = 10 V, le =0, f =1.0 MHz Cip input Capacitance 60 60 pF Ves =0.5 V, Ic =0, f = 1.0 MHz Nie Small Signal Current Gain 80 | 400 | 30 200 Ic = 1.0 MA, Vce = 5.0 V, f = 1.0 kHz Nite Current Gain Bandwidth Product] 5.0 5.0 lc = 50 MA, Vee = 10 V, f = 20 MHz Ip Ce Collector Base Time Constant 400 400 ps lc = 10 MA, Vce = 10 V, f = 4.0 MHz NF Noise Figure 4.0 dB ic = 100 pA, Vee = 10 V, f= 1.0 kHz, Rs = 10 kn 3-265DE ff sye3e74 oo27544 O i ma FAIRCHILD SEMICONDUCTOR a4 3469674 FAIRCHILD SEMICONDUCTOR 640 27546 D -_ FAIRCH =) 2N3053 TRI a NPN Small Signal General A Schlumberger Company Purpose Amplifier Vceo ... 40 V (Min) PACKAGE bre... 50-250 @ 150 mA 2N3053 TO-39 e f;... 100 MHz (Min) @ 50 mA { ABSOLUTE MAXIMUM RATINGS (Note 1) 1 Temperatures ' Storage Temperature -65C to 200C Operating Junction Temperature 176C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Case Temperature 5.0 W Linear Derating Factor 28.6 mW/C Voltages & Currents Vceo Collector to Emitter Voltage 40 V Vcpo Collector to Base Voltage 60V Veso Emitter to Base Voltage 5.0 V le Collector Current (Continuous) 700 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL | CHARACTERISTIC MIN |MAX | UNITS TEST CONDITIONS BVeco Collector to Emitter Breakdown Voltage| 40 Vv tc = 100 pA, le = 0 BVcer Collector to Emitter Breakdown Voltage| 50 Vv le = 100 pA, Ree = 100 BVcso Collector to Base Breakdown Voltage | 60 v lc = 100 pA, le = 0 BVeso Emitter to Base Breakdown Voltage 5.0 Vv lo = 0, le = 100 pA Icex Collector Cutoff Current 0.25 BA Voce = 30 V, Vesiorn = 1.5 V leso Emitter to Base Cutoff Current 0.25 BA Ves = 4.0 V, le =0 hee DC Pulse Current Gain (Note 4) 25 lc = 150 mA, Vce = 2.5 V 50 250 le = 150 MA, Vee = 10 V Veetsatt Collector to Emitter Saturation Voltage 1.4 Vv tc = 150 mA, lp = 1.5 mA (Note 4) Vecteat Base to Emitter Saturation Voltage 1.7 Vv le = 150 mA, Ig = 15 MA (Note 4) Veeion) Base to Emitter On Voltage 1.7 Vv Ic = 150 MA, Vce = 2.5 V Cab Output Capacitance 15 pF Vea = 10 V, le =0, f = 140 kHz Cw Input Capacitance 80 pF Ves = 0.5 V, le = 0, f = 140 kHz hte Current Gain Bandwidth Product 5.0 lc = 50 mA, Vce = 10 V, f = 20 MHz NOTES: 1. These ratings are limiting vatues above which the serviceability of any individual semiconductor device may be impaired. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200C and junctron-to-case thermal resistance of 35 C/W (derating factor of 28.6 mW/C). 4. Pulse conditions: length = 300 ps; duty cycle = 2%. 5. For product family characteristic curves, refer to Curve Set T149. 3-266 " tgs ye 1FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR | ce FAIRCHILD Pinte oe A Schlumberger Company 2N31 2N31 ay DE s4esu74 oo27547 4 i 84D 27547 p T-L9-2/ 07/2N3108 09 NPN Small Signal General Purpose Amplifiers & Saturated Switches Vero ... 40 V (Min) (2N3109), 60 V (Min) (2N3107/8) Veetan ... 1.0 V (Max) @ 1.0A Hre ... 100-300 @ 150 mA (2N3107/9), 40 (Min) @ 500 mA (2N3107/9, 40 (Min) @ 500 mA (2N3107/9) ton ... 200 ns (Max) @ 150 mA tot -.. 600 ns (Max) (2N3108), 1.0 us (Max) (2N3107/9) @ 150 mA NF ... 7.0dB (Max) @ 1.0 kHz ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65C to 200C Operating Junction Temperature 200 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 0.8 W 25 C Case Temperature 5.0 W Voitages & Currents 3107/8 3109 Vceo Collector to Emitter Voltage 60 V 40V (Note 4) Veso Collector to Base Voltage 100 V 80 V Veao Emitter to Base Voltaqe 7.0V 7.0V PACKAGE 2N3107 TO-39 2N3108 TO-39 2N3109 TO-39 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 7) NO 1. 2. 3. MOOS 3107/9 3108 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage (2N3107 only) 100 Vv Ic = 100 pA, le = 0 (2N3108 only) 100 v Ic = 100 vA, le =0 (2N3109 only) 80 Vv Io = 100 pA, le = 0 BVego Emitter to Base Breakdown 7.0 7.0 Vv le = 100 vA, 6 =O Voltage leso Emitter Cutoff Current 10 10 nA Ves = 5.0 V, le =0 lego Collector Cutoff Current 10 10 BA Vea = 60 V, le =0, Ta = 150C Ices Collector Reverse Current 10 10 nA Vce = 60 V, Ven =O TES: These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 200 C and junction-to-case thermal resistance of 35 C/W (derating factor of 28.6 mW/* C); junction-to-ambient thermal resistance of 218 C/W (derating factor of 45 mW/ C). Rating refers to a high current point where collector to emitter voltage Is fowest Pulse conditions: length = 300 us; duty cycle = 1%. Saturation voltage measured with 1/4 tead length. For product family characteristic curves, refer to Curve Set T149,BFAIRCHILD SEMICONDUCTOR ay DEB sse9e74 ooa7sua a 84D 275486 2N3107/2N3108/2N3109 Te AA AY Ds ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3107/9 $108 SYMBOL] CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS Rre DCG Pulse Current Gain (Note 5)j 100 | 300 7 40 120 Ip = 150 mA, Vee = 1.0 V 40 25 Ic = 500 mA, Vce = 10 V 35 20 Io = 0.1 MA, Vee = 10 V 30 15 Ic = 150 mA, Voe = 10 V, Ta = 55C Veeoteus | Collector to Emitter Sustaining Voltage (Notes 4 & 5) (2N3107)| 60 Vv Ic = 30 mA, ls =O (2N3108) 60 v Ic = 30 mA, fp =O (2N3109) 40 Vv Ic = 30 mA, ls =0 Veetsat Collector to Emitter Saturation 0.25 0.25 V Ic = 150 mA, Ip = 15 MA Voltage (Note 5) (Notes 5 & 6) 1.0 1.0 Vv tc = 1.0A, ls = 100 mA Veetean Base to Emitter Saturation 1 1.1 Vv Ie = 150 mA, ls = 15 mA Voltage (Note ) (Notes 5 & 6) 2.0 2.0 Vv le = 1.0 A, ls = 100 mA Cap Open Circuit Output Capacitance (2N3107) 20 pF Vea = 10 V, le = 0, f= 140 kHz (2N3108) 20 pF Ves = 10 V, le =0, f =140 kHz (2N3109) 25 pF Ver = 10V, le = 0, f =140 kHz Co Open Circuit Input Capacitance 80 80 pF Ven = 0.5V, le =0, f =140 kHz ton Turn On Time 200 200 ns Io = 150 mA, lpi = 7.5 mA, (test circuit no. 288) lp2 ~ 7.5 mA tot Turn Off Time 1000 600 ns Io = 150 mA, Ini 7.5 mA, (test circuit no. 289) lee = 7.5 mA 3-268