AON6992 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary * Trench Power MOS Technology * Low RDS(ON) * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Applications VDS Q1 30V Q2 30V ID (at VGS=10V) 50A 85A RDS(ON) (at VGS=10V) < 5.2m < 2m RDS(ON) (at VGS=4.5V) < 8.6m < 2.5m 100% UIS Tested 100% Rg Tested * DC/DC Converters in Computing * Isolated DC/DC Converters in Telecom and Industrial S2 S2 Bottom View Top View DFN5X6D Top View S2 Bottom View G2 PHASE PHASE (S1/D2) D1 D1 D1 D1 D1 S1/D2 PIN1 S1/D2 G1 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6992 DFN 5x6D Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage C 12 V 50 85 C L=0.01mH C 10s TC=25C Power Dissipation B TA=25C A 19 31 15 25 IAS 38 80 A EAS 7 32 mJ VSPIKE 36 36 V 21 45 8 18 3.1 3.1 2 2 PDSM TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2014 67 260 PD TC=100C TJ, TSTG Symbol t 10s Steady-State Steady-State A 31 100 IDSM TA=70C VDS Spike Power Dissipation 20 IDM TA=25C Continuous Drain Current Avalanche Current Units V ID TC=100C Avalanche energy Max Q2 30 VGS TC=25C Continuous Drain G Current Pulsed Drain Current Max Q1 30 RJA RJC A W W -55 to 150 Typ Q1 30 50 4.6 www.aosmd.com Typ Q2 30 50 2.2 Max Q1 40 65 6 C Max Q2 40 65 2.8 Units C/W C/W C/W Page 1 of 10 Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250A, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1.4 TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz 100 nA 2.2 V 4.3 5.2 6.3 7.6 6.8 8.6 m 1 V 20 A 67 VGS=0V, VDS=15V, f=1MHz 0.6 A 1.8 0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ m S 820 pF 340 pF 40 pF 1.2 1.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 Qg(4.5V) Total Gate Charge 6.1 nC 2 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A nC Qgd Gate Drain Charge 2.4 nC tD(on) Turn-On DelayTime 6.5 ns VGS=10V, VDS=15V, RL=0.75, RGEN=3 16.5 ns 17 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 2.5 ns IF=20A, dI/dt=500A/s 11 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 19 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2014 www.aosmd.com Page 2 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 70 4V 60 4.5V 50 50 3.5V 10V 40 40 ID(A) ID (A) VDS=5V 60 30 125C 30 20 25C 20 10 10 VGS=3V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.8 8 RDS(ON) (m) 2 VGS=4.5V 6 4 VGS=10V 2 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 20 1.0E+01 ID=20A 1.0E+00 125C 1.0E-01 12 IS (A) RDS(ON) (m) 16 125C 1.0E-02 8 25C 1.0E-03 4 1.0E-04 25C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 200 0 5 10 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 500 10s RDS(ON) limited 10s 10.0 100s 1ms 10ms DC 1.0 0.1 0.0 0.01 TJ(Max)=150C TC=25C 400 Power (W) 100.0 10 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Crss 0 0 ZJC Normalized Transient Thermal Resistance Coss 400 TJ(Max)=150C TC=25C 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.00001 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=6C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2014 www.aosmd.com Page 4 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 60 50 Current rating ID(A) Power Dissipation (W) 20 15 10 5 40 30 20 10 0 0 0 25 50 75 100 125 0 150 25 TCASE (C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=65C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2014 www.aosmd.com Page 5 of 10 Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=12V Gate Threshold Voltage VDS=VGS, ID=250A 1.1 TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V 100 VGS=10V, ID=20A VDS=5V, ID=20A Units 0.5 TJ=55C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz f=1MHz 0.9 mA 100 nA 1.5 1.9 V 1.6 2 2.4 3 2 2.5 m 0.7 V 50 A 100 0.45 m S 3110 pF 930 pF 100 pF 1.9 2.9 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 49 Qg(4.5V) Total Gate Charge 21 nC 8 nC VGS=10V, VDS=15V, ID=20A nC Qgs Gate Source Charge Qgd Gate Drain Charge 5.6 nC tD(on) Turn-On DelayTime 9 ns tr Turn-On Rise Time 4 ns tD(off) Turn-Off DelayTime 44 ns tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 7 ns 17.5 ns nC 43 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2014 www.aosmd.com Page 6 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3V 80 VDS=5V 80 4.5V 10V 60 60 ID(A) ID (A) VGS=2.5V 125C 40 40 20 20 25C 0 0 0 1 2 3 4 0 5 1 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 1.8 3 RDS(ON) (m) 2 VGS=4.5V 2 1 VGS=10V VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+01 ID=20A 1.0E+00 125C 1.0E-01 125C 3 IS (A) RDS(ON) (m) 4 25C 1.0E-02 2 1.0E-03 25C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS=15V ID=20A Ciss 8 Capacitance (pF) VGS (Volts) 3000 6 4 2 2000 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) 25 30 10s 100s DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 400 Power (W) 10s 10.0 300 200 100 TJ(Max)=150C TC=25C 0.0 0.01 ZJC Normalized Transient Thermal Resistance 20 500 100.0 R DS(ON) limited 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 0.1 10 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=2.8C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2014 www.aosmd.com Page 8 of 10 50 100 40 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 60 40 20 0 0 0 25 50 75 100 125 0 150 25 TCASE (C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=65C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2014 www.aosmd.com Page 9 of 10 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10