AON6992
General Description Product Summary
Q1 Q2
V
DS
30V
30V
I
D
(at V
GS
=10V) 50A 85A
R
DS(ON)
(at V
GS
=10V) < 5.2mΩ < 2mΩ
R
DS(ON)
(at V
GS
=4.5V) < 8.6mΩ < 2.5mΩ
Applications
100% UIS Tested
100% Rg Tested
Symbol
V
DS
V
GS
V
Units
• Trench Power αMOS Technology
• Low R
DS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Max Q1 Max Q2
30Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AON6992 3000DFN 5x6D
30
±20
Tape & Reel
Orderable Part Number Package Type Form Minimum Order Quantity
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
Gate-Source Voltage
Parameter
V
30V Dual Asymmetric N-Channel MOSFET
±12
Bottom View
PIN1
DFN5X6D
Top View Bottom View
G1
D1
D1
D1
S2
S2
S2 PHASE
(S1/D2)
D1
PIN1
G2
Top View
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
PHASE
S1/D2 S1/D2D1
V
GS
I
DM
I
AS
Avalanche energy L=0.01mH
C
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol Typ Q1 Typ Q2 Max Q1 Max Q2
t ≤ 10s
30 30 40 40
Steady-State
50 50 65 65
Steady-State
R
θJC
4.6 2.2 62.8
Continuous Drain
Current
G
°C/W
45
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
3.1
2
V
I
DSM
Thermal Characteristics
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
T
A
=25°C
Power Dissipation
A
2
3.1
Maximum Junction-to-Ambient
A
R
θJA
Parameter
T
A
=70°C
°C
Units
Junction and Storage Temperature Range -55 to 150
P
DSM
W
W
T
C
=25°C
T
C
=100°C 31
100
15
19
±20
50
36
8 18
21
T
A
=70°C
T
A
=25°C
Power Dissipation
B
T
C
=100°C
10µs
P
D
Gate-Source Voltage
Pulsed Drain Current
C
I
D
85
67 A
A
36
V
A
7
38
32
80
mJ
260
31
25
±12
Rev.1.0: October 2014
www.aosmd.com Page 1 of 10
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.2 V
4.3 5.2
T
J
=125°C 6.3 7.6
6.8 8.6 mΩ
g
FS
67 S
V
SD
0.71 1 V
I
S
20 A
C
iss
820 pF
C
oss
340 pF
C
rss
40 pF
R
g
0.6 1.2 1.8 Ω
Q
g
(10V) 13 nC
Q
g
(4.5V) 6.1 nC
Q
gs
2 nC
Q
gd
2.4 nC
t
D(on)
6.5 ns
t
r
16.5 ns
t
D(off)
17 ns
t
f
2.5
ns
V
DS
=V
GS,
I
D
=250µA
Gate-Body leakage current
V
GS
=4.5V, I
D
=20A
Static Drain-Source On-Resistance
Zero Gate Voltage Drain Current
Gate Source Charge
Gate resistance
Forward Transconductance
Input Capacitance
Maximum Body-Diode Continuous Current
V
DS
=5V, I
D
=20A
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Total Gate Charge
SWITCHING PARAMETERS
V
GS
=10V, I
D
=20A mΩ
Diode Forward Voltage
DYNAMIC PARAMETERS
Reverse Transfer Capacitance
I
S
=1A,V
GS
=0V
R
DS(ON)
Turn-On DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Gate Drain Charge
f=1MHz
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
V
DS
=0V, V
GS
=±20V
µA
I
DSS
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
t
f
2.5
ns
t
rr
11 ns
Q
rr
19 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: October 2014
www.aosmd.com Page 2 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
70
012345
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
10
0 5 10 15 20 25 30
RDS(ON) (mΩ)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
10
20
30
40
50
60
70
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=3V
3.5V
4.5V
10V
4V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
0
4
8
12
16
20
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.1.0: October 2014
www.aosmd.com Page 3 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
0.00001 0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
V
> or equal
to 4.5V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
10ms
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal
to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=6°C/W
Rev.1.0: October 2014
www.aosmd.com Page 4 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=65°C/W
Rev.1.0: October 2014
www.aosmd.com Page 5 of 10
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 0.5
T
J
=55°C 100
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.1 1.5 1.9 V
1.6 2
T
J
=125°C 2.4 3
2 2.5 mΩ
g
FS
100 S
V
SD
0.45 0.7 V
I
S
50 A
C
iss
3110 pF
C
oss
930 pF
C
rss
100 pF
R
g
0.9 1.9 2.9 Ω
Q
g
(10V) 49 nC
Q
g
(4.5V) 21 nC
Q
gs
8 nC
Q
gd
5.6 nC
t
D(on)
9 ns
t
r
4 ns
t
D(off)
44 ns
t
f
7
ns
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
STATIC PARAMETERS
Drain-Source Breakdown Voltage ID=10mA, VGS=0V
I
DSS
Zero Gate Voltage Drain Current mA
mΩ
Diode Forward Voltage I
S
=1A,V
GS
=0V
Gate-Body leakage current V
DS
=0V, V
GS
=±12V
V
DS
=V
GS,
I
D
=250µA
V
GS
=4.5V, I
D
=20A
Forward Transconductance V
DS
=5V, I
D
=20A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
t
f
7
ns
t
rr
17.5 ns
Q
rr
43 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: October 2014
www.aosmd.com Page 6 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
01234
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
0 5 10 15 20 25 30
RDS(ON) (mΩ)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
10V
4.5V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
0
1
2
3
4
5
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.1.0: October 2014
www.aosmd.com Page 7 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50 60
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
V
> or equal
to 4.5V
10µs
1ms
DC
RDS(ON)
limited
100µs
10ms
TJ(Max)=150°C
TC=25°C
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal
to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=2.8°C/W
T
on
T
P
D
Rev.1.0: October 2014
www.aosmd.com Page 8 of 10
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
20
40
60
80
100
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=65°C/W
T
on
T
P
D
Rev.1.0: October 2014
www.aosmd.com Page 9 of 10
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
ton
td(off) t
f
toff
L
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev.1.0: October 2014
www.aosmd.com Page 10 of 10
