2SK3490 Ordering number : EN9085 N-Channel Silicon MOSFET 2SK3490 General-Purpose Switching Device Applications Features * * * Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS 20 V 8 A Drain Current (DC) ID Drain Current (Pulse) IDP V PW10s, duty cycle1% 32 A Mounted on a ceramic board (250mm20.8mm) 1.5 W Allowable Power Dissipation PD 3.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Tc=25C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V 30 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=4A 1.2 RDS(on)1 RDS(on)2 ID=4A, VGS=10V ID=2A, VGS=4V Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS td(off) tf 4.8 Unit max V 1 A 10 A 2.6 V 30 39 m 40 56 m 8 S 690 pF 160 pF VDS=10V, f=1MHz See specified Test Circuit. 88 pF 10 ns See specified Test Circuit. 60 ns See specified Test Circuit. 27 ns See specified Test Circuit. 32 ns Marking : LG Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 90505PA MS IM TA-100579 No.9085-1/4 2SK3490 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 16 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 3.4 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=8A Diode Forward Voltage VSD IS=8A, VGS=0V Package Dimensions unit : mm 7007-003 2.4 1.2 V Switching Time Test Circuit VDD=15V VIN Top View 10V 0V 4.5 1.5 1.6 ID=4A RL=3.75 VIN 2 VOUT PW=10s D.C.1% 4.0 1.0 2.5 D 1 nC 0.85 G 3 0.4 2SK3490 0.4 P.G 0.5 S 50 1.5 3.0 1 : Gate 2 : Drain 3 : Source Bottom View SANYO : PCP ID -- VDS VDS=10V 4.0V 3.5 7 2 2.5V 5 4 3 C 3 6 2 1 --25 C Drain Current, ID -- A 4 Ta=7 5 V 3.0 4.5V 10V 1 0 0 VGS=2.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT06300 25 C Drain Current, ID -- A 5 ID -- VGS 8 V 6.0V 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT06301 No.9085-2/4 2SK3490 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 70 60 50 4A ID=2A 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 2 = Ta Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 2 C C 5 7 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 30 , VG I D=4A 10 --40 --20 0 Ciss, Coss, Crss -- pF tf td(on) 80 100 120 140 160 IT10067 3 2 1.0 7 5 3 2 0.1 7 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT06305 Ciss, Coss, Crss -- VDS f=1MHz Ciss 5 td(off) 10 7 5 60 VGS=0V 7 3 2 3 2 40 IS -- VSD 1000 VDD=15V VGS=10V 100 7 5 20 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 0V S=1 20 0.01 0.2 5 7 10 IT10068 Drain Current, ID -- A Switching Time, SW Time -- ns 40 3 2 2 0.1 0.01 tr 3 2 3 2 Coss 100 Crss 7 5 3 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 IT10069 7 5 3 2 VDS=10V ID=8A 9 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC 14 16 18 IT10080 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V =4V , VGS A I D=2 10 7 5 7 5 --2 50 Ambient Temperature, Ta -- C 10 C 5 60 0 --60 20 VDS=10V 3 70 IT10066 yfs -- ID 2 RDS(on) -- Ta 80 Ta=7 5C 25C --25 C 80 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT06307 ASO IDP=32A 10 s 10 0 s ID=8A DC 1m 10 0m s op era s 10 ms tio n Operation in this area is limited by RDS(on). Tc=25C Single pulse 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10070 No.9085-3/4 2SK3490 PD -- Ta 1.5 M ou nte do na ce ram 1.0 ic bo ard PD -- Tc 4.0 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 (2 50 mm 0.5 2 0 .8m m) 0 3.5 3.0 2.0 1.0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT10071 0 20 40 60 80 100 120 140 Case Tamperature, Tc -- C 160 IT10072 Note on usage : Since the 2SK3490 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2005. Specifications and information herein are subject to change without notice. PS No.9085-4/4