MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION OUTLINE DRAWING
note(3)
1.3±0.4
0.62±0.2
:Copper of the ground work is exposed in case of frame separation.
2.5
2.5
3.1±0.6
9.5MAX
note:
(1)Torelance of no designation means typical value.
Dimension in mm.
(3)
(2) :Dipping area
5deg
4.5±0.5
PINS
1:GATE
2:SOURCE
3:DRAIN
4:FIN(SOURCE)
9.1±0.7
0.8±0.15
1.2±0.4
3.6±0.2
9±0.4
12.3±0.6
12.3MIN
12
4.8MAX
3.2±0.4
3
9.3MIN
7.5MIN
4
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/- 20 V
Pch Channel dissipation Tc=25°C 27.8 W
Pin Input power Zg=Zl=50Ω 0.6 W
ID Drain current - 3 A
Tch Channel temperature - 150 °C
Tstg Storage temperature - -40 to +150 °C
Rth j-c Thermal resistance junction to case 4.5 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.9 - 4.9 V
Pout Output power VDD=12.5V, Pin=0.3W, 6 10 - W
ηD Drain efficiency f=175MHz, Idq=0.3A 60 65 - %
Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control)
f=175MHz,Idq=0.3A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
10
20
30
40
50
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
CHANNEL DISSIPATION
Pch(W)
Vgs-Ids CHARACTERISTICS
0
1
2
3
4
5
0246810
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
0102030
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
20
40
60
80
100
0102030
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Ciss CHARACTERISTICS
0
10
20
30
40
50
60
0102030
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
0246810
Vds(V)
Ids(A)
Ta=+25°C
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Vgs=10V
3/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS

Vgs-Ids CHARACTORISTICS 2
0
1
2
3
4
5
0246810
Vgs(V)
Ids ( A ) , GM( S)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
Vgs-
g
m CHARACTORISTICS
0.0
0.5
1.0
1.5
2.0
0123456789
Vgs(V)
g
m( S)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
Pin-Po CHARACTERIS TICS
0
10
20
30
40
50
0 5 10 15 20 25 30
Pi n( d B m)
Po(dBm) , Gp(dB) , Idd(A)
0
20
40
60
80
100
ηd(%)
Ta=+ 25°C
f= 175MHz
Vdd=12.5V
Idq= 0.3A
Po
η
ｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS
0
2
4
6
8
10
12
14
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Pin ( W)
Pout(W) , Idd(A)
30
40
50
60
70
80
90
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f= 175MHz
Vdd=12.5V
Idq= 0.3A
Vdd-Po CHARACTERISTICS
0
2
4
6
8
10
12
14
16
468101214
Vdd(V)
Po ( W )
0
1
2
3
4
Idd( A )
Idd
Ta=25°C
f= 175MHz
Pin= 0.3W
Idq= 0.3A
Zg=ZI=50 ohm
Po
4/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=175MHz)
L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
75
92
10pF
72
70
30pF5pF
9.1kOHM
L6
52
25
7
100
87
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Note:Board material-Teflon substrate
C1:2200pF 10uF in parallel
C2
RF-OUT
C1
L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire
100OHM
Vgg Vdd
RF-IN
300pF
Dimensions:mm
82pF
5
92
55
8.2kOHM
L4
C2:2200pF*2 in parallel
C3
C3:2200pF,330uF in parallel
L5
L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
175MHz
RD06HVF1
30
33
100
L1 L3L2
300pF
L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire
5/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=175MHZo
f=135MHzZo
f=175MHz Zout*
f=175MHz Zin*
Zo=50ohm
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
175 4.25-j25.6 5.64-j1.05
Po=10W, Vdd=12.5V,Pin=0.3W
6/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
RD06HVF1 S-PARAME TER DATA (@Vdd= 12. 5 V, Id=5 00m A)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
10 0.985 -18.8 34.407 165.9 0.008 76.2 0.826 -17.3
30 0.900 -50.4 30.427 143.3 0.021 59.4 0.767 -43.6
50 0.799 -74.4 24.979 126.1 0.029 43.2 0.677 -65.0
100 0.667 -109.6 15.565 100.7 0.032 27.3 0.547 -96.8
150 0.636 -129.0 10.953 85.1 0.032 23.1 0.523 -113.4
200 0.630 -140.1 8.194 73.7 0.029 25.3 0.528 -124.7
250 0.645 -148.2 6.528 63.9 0.027 34.5 0.561 -132.7
300 0.663 -155.0 5.315 55.2 0.027 49.1 0.588 -139.6
350 0.685 -160.7 4.437 47.4 0.031 61.8 0.622 -145.9
400 0.708 -165.9 3.771 39.9 0.039 71.0 0.657 -151.7
450 0.729 -170.8 3.233 33.2 0.048 75.8 0.686 -157.0
500 0.752 -175.4 2.826 26.8 0.059 77.9 0.715 -162.3
550 0.771 179.9 2.475 20.7 0.070 76.9 0.743 -167.6
600 0.789 175.4 2.186 15.2 0.083 76.1 0.763 -172.3
650 0.804 171.2 1.943 9.7 0.095 73.7 0.789 -177.3
700 0.819 166.9 1.738 4.6 0.108 71.0 0.804 178.1
750 0.834 162.6 1.560 0.0 0.120 68.1 0.820 173.5
800 0.842 158.5 1.410 -4.5 0.133 65.0 0.837 169.0
850 0.851 154.3 1.275 -8.7 0.145 61.6 0.847 164.8
900 0.859 150.3 1.160 -12.6 0.157 58.2 0.858 160.2
950 0.866 146.2 1.058 -16.9 0.167 54.5 0.869 155.7
1000 0.870 142.3 0.963 -20.0 0.179 51.0 0.876 151.8
S11 S21 S12 S22
7/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
warning !
8/8