PD- 94820 IRF830APbF SMPS MOSFET HEXFET(R) Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN 1001) VDSS Rds(on) max ID 500V 1.40 5.0A TO-220AB GDS Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.0 3.2 20 74 0.59 30 5.3 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies: Two transistor Forward Half Bridge and Full Bridge Notes through are on page 8 www.irf.com 1 11/5/03 IRF830APbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- --- 2.0 --- --- --- --- Typ. --- 0.60 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.4 VGS = 10V, ID = 3.0A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.8 --- --- --- --- --- --- --- --- --- --- --- --- --- Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- --- 10 21 21 15 620 93 4.3 886 27 39 Max. Units Conditions --- S VDS = 50V, ID = 3.0A 24 ID = 5.0A 6.3 nC VDS = 400V 11 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 5.0A ns --- RG = 14 --- RD = 49,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Typ. Max. Units --- --- --- 230 5.0 7.4 mJ A mJ Typ. Max. Units --- 0.50 --- 1.7 --- 62 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 5.0 showing the A G integral reverse --- --- 20 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 5.0A, VGS = 0V --- 430 650 ns TJ = 25C, IF = 5.0A --- 1.62 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF830APbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 4.5V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 1 4.5V 20s PULSE WIDTH TJ = 150 C 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 10 10 TJ = 150 C TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 ID = 5.0A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF830APbF 20 V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd 1000 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 10000 Ciss 100 Coss 10 Crss 1 1 10 100 1000 ID = 5.0A 16 12 8 4 0 A FOR TEST CIRCUIT SEE FIGURE 13 0 4 12 16 20 24 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 8 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.2 0.4 0.6 0.8 1.0 Fig 7. Typical Source-Drain Diode Forward Voltage 10us 10 100us 1ms 1 10ms V GS = 0 V VSD ,Source-to-Drain Voltage (V) 4 VDS = 400V VDS = 250V VDS = 100V 1.2 0.1 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF830APbF 5.0 VDS VGS ID , Drain Current (A) 4.0 RG 3.0 RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.0 t1 , Rectangular Pulse Durat Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V D.U.T RG 20V DRIVER L VDS + V - DD IAS 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRF830APbF 500 ID 2.2A 3.2A BOTTOM 5.0A TOP 400 300 200 100 0 I AS 25 50 75 100 125 Starting TJ , Junction Temperature( C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS 790 QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. 785 780 775 + V - DS 770 0.0 VGS 1.0 2.0 3.0 4.0 5.0 I av , Avalanche Current (A) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 V DSav , Avalanche Voltage (V) 10 V Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com A IRF830APbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF830APbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 3 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 18mH RG = 25, IAS = 5.0A. (See Figure 12) ISD 5.0A, di/dt 370A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ 150C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 8 www.irf.com