MPS6511 (SILICON) (1) Raja is measured with the device soldered into a typical printed circuit board. NPN SILICON NPN SILICON ANNULAR VHF/UHF VHF/UHF AMPLIFIER AMPLIFIER TRANSISTOR TRANSISTOR ... designed for use in VHF/UHF amolifier applications. @ High Coliector Emitter Breakdown Voltage BYVCEQ = 20 Vdc (Min) @ Ic = 0.5 mAdce @ Low Output Capacitance Cob = 1.25 pF (Typ) @ Vcg = 10 Vde he A | c | } 4 N MAXIMUM RATINGS seainc/ 6 1 | Rating Symbol Value Unit PLANE t K Collector-Emitter Voltage VcEO 20 Vde Collector-Emitter Voitage Voces 30 Vide o~| mel Emitter-Base Voltage Ves 3.0 Vode STYLE 2: R Collector Current Continuous le 100 mAdc PIN , anaes ~| a Total Power Dissipation @ Ta = 25C Pp 350 mw 3. COLLECTOR |_| | Derate Above 25C 2.8 mWw/c Total Power Dissipation @ Te = 25C Po 1.0 Watt Derate Above 25C 8.0 mw /c Operating and Storag Junction Ty.Tetg | -55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermat Resistance, Junction to Ambient Royal?) 357 c Thermal Resistance, Junction to Case ReJC 125 cw CASE 29-02 TO0-92 912MPS6511 (continued) ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Characteristic ] Symbot min | typ Max Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) BYVcEO 20 - ~ Vde {Ig = 0.5 mAdc, !g = 0} Collector-Emitter Breakdown Voltage (1) BYVcES 30 - ~- Vde (ig = 100 uAdc, Veg = O} Collector Cutoff Current Icpo = _ 50 nAdc (Vcp = 15 Vde, Ie = 0} ON CHARACTERISTICS OC Current Gain (1) hee 25 76 ~ - (I = 10 mAdc, VcgE = 10 Vde) OYNAMIC CHARACTERISTICS Output Capacitance Cob - 1.25 25 pF (Vcp = 10 Vde, te = 0, f = 100 kHz} FUNCTIONAL TEST Common-Emitter Amplifier Power Gain Gpe 30 - - dB (Ic = 10 mAde, Veg = 12 Vde, f = 45 MHz) {1} Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 913