2N4338-2N4876 Numerical Index ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS || REPLACE- | PAGE P Blu y y = fee @ | Vi @l Bl a cd D J CE PE FE c CESAT ic = -_ 5 Tee 2) | nent | numper | USE 3 ce = g| Koom@le) 4, 5 ale == @ 25C | B| C | (volts) | (volts) |S | (min) (max) 5] (volts) 5 3 5/2 2N4338 thru Field Effect Transistors, see Table on Page 1-166 2N4343 2N4346 LPA 5.0W]A 60} 0 2N4347 S|N LPA 100W | c 140} 120] 0 15 60 2.0A 2N4348 S}N LPA 120W ) Cc 140} 120] 0 15 60 5.0A 2N4350 S|[N LPA 7.0W]C 65 40 }0 10 |] 200 | 0.35A 300M } T pu Field Effect Transistors, see Table on Page 1+166 2N4354 S| P LNA 350M } A 125 60! 69) 0 25 O.1M 500M 7 T 2N4355 s|P LNA 350M | A 125 60 60,0 60 0.1M 500M | T 2N4356 | S| P LNA} 350M]A] 125] so} 80}0] 25 0.1M 500M | T 2N4359 S| P LNA 360M {A 200 45 4510 50 | 600 1.0M 0,25 LOM 50 j,E 2N4360 Field Effect Transistor, see Table on Page 1-166 2N4361 thru Thyristors, see Table on Page 1-154 2N4380 Breet) Field Effect Transistors, see Table on Page 1-166 2N4383 S|N RFA 800M | A 200 40 3010 1000 |E 120M | T 2N4384 S|N RFA 500M | A 200 40 3040 1000 | E 120M | T 2N4385 S|[N RFA 800M {A 200 40 30 | 0 1000 |E 120M [T 2N4.386 S|N RFA 500M FA 200) 40 30 | 0 1000 | E 120M | T 2N4387 S|] P 20W | A 200 40 40 | 0 25 | 100 500M 2N4388 S|] P 20W | A 200 60 6040 25 | 100 500M 2N4389 S|P HSS 200M 1A 125! 12 12 10 30 | 180 LOM Q.15 10M 4 4.0 JE 2N4390 S{N MSS 500M [A 175 120) 120 ]/0 20 2.0M 50M | T 2N4391 thru Field Effect Transistors, see Table on Page 1-166 2N4393 2N4395 S|N 2N3715 | 7-125 LPA | 62.5W }C 60 40 |0 50 | 170 2.0A 4M |T 2N4396 S|N 2N3715 | 7-125 LPA | 62.5W | C 80 60/0 40 1170 2,0A 4M |T 2N4398 S|P 7-167 LPA 200W | C 200 40 40 |0 15 60 154A 1.0 15A 40 /E AM |T 2N4399 S| P 7-167 LPA 200W | C 200 60 60/0 15 60 15A 1.0 15A 40 ]E 4M [T 2n4400 S|N 5-34 HSA 310M FA 135 66 40 40 50 | 150 150M 0.4 150M 20 |E 200M |T 2N4401 SIN 5-34 HSA 310M | A 135 60 40 | 0 |100 | 300 150M 0.4 150M 40 /E 250M | T 2N4402 S|P 5-39 HSA 310M | A 135 40 40/0 50 | 150 150M 0.4 150M 30 |E 150M |T 2N4403 S| P 5-39 HSA 310M |A 135 40 40 10 |100 | 300 150M 0.4 150M 60 |E 200M | T 2N4409 S}N 5-45 MSS 310M TA 135 80 50 [0 60 | 400 1.0M 0.2 1.0M 2N4410 S|N 5-45 MSS 310M | A 135 120 80 | 0 60 | 400 1.0M. 0.2 1.0M 2N4411 |S] P 8-302 | MSA| 150M ]A | 200 15} 12 ]0 | 40 0.5M 400M | T 2N4412 S|N RFA 600M | A 200 40 30 |0 1000 JE LOOM | T 2N4412A |S] P RFA 600M }A 200) 60 60 )0 120 |E 20M |T 2N4413 S|P RFA 400M FA 200 40 30 |0 1000 |E 100M /T 2N4413A |S | P RFA 400M }A 200 60 60 ]0 120 JE 20M |T 2N4414 S|]P RFA 600M |A 200 40 30 |0 1000 JE 100M |T 2N4414A |S | P REA 600M 1A 200 60 60 1O 100 JE 20M )T 2N4415 S| P RFA 400M FA 200 40 30/0 1000 | E 100M jT 2N4415A |S | P RFA 400M | A 200 60 60 |O 100 JE 20M | T pune Field Effect Transistors, see Table on Page 1-166 2N4418 S|N 2N4 264 | 5-29 MSA 250M 4A 125 40 40 |s 40 | 120 10M 500M {T 2N4419 SIN 2N4264 | 5-29 MSA 250M [A 125 30 30 {4S 30 LOM 400M 1 T 2N4420 S|N MPS3646] 5-95 MSA 250M |A 125 40 40/5 30 | 120 30M 350M }T 2N4421 SIN MPS 3646] 5-95 MSA 250M [A 125 30 30 1S 25 30M 300M )T 2N4422 |S |N | MPS3646] 5-95 MSA | 250M {A | 125 40] 40 |s { 30 ]120 30M 350M |T 2N4423 SIN MPS3640] 5-93 MSA 250M | A 125 12 1248 40 1150 30M 400M | T 2N4424 SIN MPS 3711) 5-100 MSA 360M |A 150 40 40 |0 180 |E 2N4425 SUN MSA 560M [A 150 40 40 |O {180 2M 2N4427 S|N LPA 3.5W ]C 40 20 |0 10 | 200 O.1A 500M | T 2N44 28 S]N LPA 3.5W [C 55 35 |0 20 | 200 |0.05A 700M |T 2N4429 S JN LPA 5.0W |C 55 35 |0 20 | 200 |0.05A 700M | T 2N4430 S[N LPA 10W 1c 55 40 |0 20 | 200 Q.,1A 600M |T 2N4431 S|N LPA 18w | Cc 55 40 ]0 20 | 200 O.1A 600M | T 2N4432 S|N RFA 600M ;A 50 30 10 40 {130 6.0M 45 }E 2N4432A 1S [N RFA 600M |A 50 30 |0 80 1150 6.0M 90 JE 2N4440 SIN LPA | 11.6W |C 65 40 |0 10 | 200 |0.1254 400M |T 2N4441 thru Thyristors, see Table on Page 1-154 2N4444 2n4576 [Ss |N | 2N3716 ]7-125 | HPA | 150W |c | 200| 100] 80 ]o | 50/150] 1.0A | 0.8] 5.0A | 25 |B | 30K JE 2N4851 they Unijunction Transistors, see Table on Page 1-174 2N4853 2N4854 c 1 aa HSS 300M JA 200 60 40 |o 50 1.0M 200M |T 2N4855 omplementary Pair Hss | 300M JA | 200] 60] 40 jo } 25 1.0M 200M |T 2N4856 thru Field Effect Transistors, see Table on Page 1-166 2N4861 ane Unijunction Transistors, see Table on Page 1+174 2N4872 S |P HSS 700M |C 200 12 12 |0 50 |120 10M 0.13 1L.OM | 9.0 {E 2N4873 SIN HSS 360M 1A 200 40 15 {oO {110 {150 10M 0.2 10M 7.0 1E 2N4874 SIN RFA 720M |A 175 30 20 [0 200 |E 900M [T 2N4875 Ss |N RFA 720M |A 175 40 25 |0 200 JE 800M |T 2N4876 S {N RFA 720M {A 175 40 30 10 200 |E 650M |T 1-148