1/7May 2004
SD1275-01
RF POWER BIPOLAR TRANSISTORS
VHF MOBILE APPLICATIONS
REV. 2
FEATURES SUMMARY
■160 MHz
■13.6 VOLTS
■COMMON EMITTER
■POUT = 40 W MIN. WITH 9.0 dB GAIN
DESCRIPTION
The SD1275-01 is a 13.6 V Class C epitaxial sili-
con NPN planar transistor designed primarily for
VHF communications. The SD1275-01 utilizes an
emitter ballasted die geometry to withstand severe
load mismatch conditions.
Figure 1. Package
Figure 2. Pin Connection
Table 1. Order Codes
.380 4L FL (M113)
epoxy sealed
1. Collector 3. Base
2. Emitter 4. Emitter
Order Codes Marking Package Packaging
SD1275-01 SD1275-1 M113 PLASTIC TRAYS
SD1275-01
2/7
Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Table 3. Thermal Data
ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Table 4. Static
Table 5. Dynamic
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 16 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 8.0 A
PDISS Power Dissipation 70 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature – 65 to +150 °C
Symbol Parameter Value Unit
RTH(j-c) Junction-Case Thermal Resistance 1.2 °C/W
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BVCES IC = 15 mA; VBE = 0 mA 36 — — V
BVCEO IC = 50 mA; IB = 0 mA 16 — — V
BVEBO IE = 5 mA; IC = 0 mA 4.0 — — V
ICBO VCB = 15 V; IE = 0 mA — — 5 mA
hFE VCE = 5 V; IC = 250 mA 20 — — —
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
POUT f = 160 MHz; PIN = 5.0 W; VCE = 13.6 V 40 — — W
GPf = 160 MHz; PIN = 5.0 W; VCE = 13.6 V 9 — — dB
COB f = 1 MHz; VCB = 15 V — 95 — pF
3/7
SD1275-01
TYPICAL PERFORMANCE
Figure 3. Power Gain vs Frequency Figure 4. Power Output vs Power Input
Figure 5. Power Output vs Supply Voltage
(175 MHz)
Figure 6. Power Output vs Supply Voltage
(145 MHz)
Power Gain vs. Frequency
12
10
8
6
4
2
130 140 150 160 170 180 200
Power Gain (dB)
Frequency (MHz)
Pout = 40W
Vcc = 13.6V
Output Power vs. Input Power
60
50
40
30
20
10
0.25 0.5 1.0 1.5 2.0 2.5 3.0
Pout Output Power (watts)
Pin Input Power (watts)
Vcc = 13.6V
f=145MHz
f=160MHz f=175MHz
Output Power vs. Supply Voltage
F = 175 MHz
60
50
40
30
20
10
8 10 12 14 16 18 20
Pout Output Power (watts)
Vcc Supply Voltage (volts)
Pin = 3 W
Pin = 4 W
Pin = 5 W
Output Power vs. Supply Voltage
F = 145 MHz
60
50
40
30
20
10
8 10 12 14 16 18 20
Pout Output Power (watts)
Vcc Supply Voltage (volts)
Pin = 3 W
Pin = 4 W
Pin = 5 W
SD1275-01
4/7
Figure 7. Power Output vs Supply Voltage
(160 MHz)
Table 6. Impedance Data (1)
Note: 1. PIN = 3.0 W; VCE = 12.5 V
Output Power vs. Supply Voltage
F = 160 MHz
60
50
40
30
20
10
8 10 12 14 16 18 20
Pout Output Power (watts)
Vcc Supply Voltage (volts)
Pin = 3 W
Pin = 4 W
Pin = 5 W
FREQ. ZIN (Ω)Z
CL (Ω)
160 MHz 1.0 + j 0.4 2.3 + j 0.1
5/7
SD1275-01
PACKAGE MECHANICAL
Table 7. M113 Mechanical Data
Figure 8. M113 Package Dimensions
Note: Drawing is not to scale.
Symbol
millimeters inches
Min Typ Max Min Typ Max
A 5.59 5.84 0.220 0.230
B 19.94 0.785
C 18.29 18.54 0.720 0.730
D 24.64 24.89 0.970 0.980
E 9.78 0.385
F 0.10 0.15 0.004 0.006
G 2.16 2.67 0.085 0.105
H 4.06 4.57 0.160 0.180
I 7.11 0.280
J 6.10 6.48 0.240 0.255
SD1275-01
6/7
REVISION HISTORY
Table 8. Revision History
Date Revision Description of Changes
June-1993 1 First Issue
25-May-2004 2 Stylesheet update. No content change.
7/7
SD1275-01
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