IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Halogen-free According to IEC 61249-2-21 Definition * Dynamic dV/dt Rating * Repetitive Avalanche Rated * Surface Mount (IRFR420, SiHFR420) * Straight Lead (IRFU420, SiHFU420) * Available in Tape and Reel * Fast Switching * Ease of Paralleling * Compliant to RoHS Directive 2002/95/EC 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 19 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D DPAK (TO-252) IPAK (TO-251) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. D D G G S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb DPAK (TO-252) SiHFR420-GE3 IRFR420PbF SiHFR420-E3 IRFR420 SiHFR420 DPAK (TO-252) SiHFR420TR-GE3a IRFR420TRPbFa SiHFR420T-E3a IRFR420TRa SiHFR420Ta DPAK (TO-252) SiHFR420TRL-GE3a IRFR420TRLPbFa SiHFR420TL-E3a IRFR420TRLa SiHFR420TLa DPAK (TO-252) SiHFR420TRR-GE3a IRFR420TRRPbFa IRFR420TRRa - IPAK (TO-251) SiHFU420-GE3 IRFU420PbF SiHFU420-E3 IRFU420 SiHFU420 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C SYMBOL LIMIT VDS VGS 500 20 2.4 1.5 8.0 0.33 0.020 400 2.4 4.2 42 2.5 3.5 - 55 to + 150 260d ID Pulsed Drain Currenta IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb EAS Repetitive Avalanche Currenta IAR Repetitive Avalanche Energya EAR Maximum Power Dissipation TC = 25 C PD Maximum Power Dissipation (PCB Mount)e TA = 25 C Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 124 mH, Rg = 25 , IAS = 2.4 A (see fig. 12). c. ISD 2.4 A, dI/dt 50 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). UNIT V A W/C mJ A mJ W V/ns C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91275 S10-1135-Rev. C, 10-May-10 www.vishay.com 1 IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 50 Maximum Junction-to-Case (Drain) RthJC - 3.0 UNIT C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.59 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V nA IGSS IDSS RDS(on) gfs VGS = 20 V - - 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 - - 3.0 1.5 - - S - 360 - - 92 - ID =1.4 Ab VGS = 10 V VDS = 50 V, ID = 1.4 A A Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b - 37 - - 19 - - 3.3 Gate-Drain Charge Qgd - - 13 Turn-On Delay Time td(on) - 8.0 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 250 V, ID = 2.1 A, Rg = 18 , RD = 120 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC - 8.6 - - 33 - - 16 - - 4.5 - - 7.5 - - - 2.4 - - 8.0 - - 1.6 - 260 520 ns - 0.70 1.4 C ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 2.4 A, VGS = 0 Vb TJ = 25 C, IF = 2.1 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91275 S10-1135-Rev. C, 10-May-10 IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 2 -Typical Output Characteristics, TC = 150 C Document Number: 91275 S10-1135-Rev. C, 10-May-10 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91275 S10-1135-Rev. C, 10-May-10 IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. Rg + - IAS V DD VDS 10 V tp 0.01 Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91275 S10-1135-Rev. C, 10-May-10 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91275 S10-1135-Rev. C, 10-May-10 IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 -For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91275. Document Number: 91275 S10-1135-Rev. C, 10-May-10 www.vishay.com 7 Package Information Vishay Siliconix TO-252AA (HIGH VOLTAGE) E b3 E1 L3 D1 D H L4 b2 b A c2 e A1 L1 L c L2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. E 6.40 6.73 0.252 0.265 L 1.40 1.77 0.055 L1 2.743 REF L2 0.070 0.108 REF 0.508 BSC 0.020 BSC L3 0.89 1.27 0.035 0.050 L4 0.64 1.01 0.025 0.040 D 6.00 6.22 0.236 0.245 H 9.40 10.40 0.370 0.409 b 0.64 0.88 0.025 0.035 b2 0.77 1.14 0.030 0.045 b3 5.21 5.46 0.205 e 2.286 BSC 0.215 0.090 BSC A 2.20 2.38 0.087 A1 0.00 0.13 0.000 0.094 0.005 c 0.45 0.60 0.018 0.024 c2 0.45 0.58 0.018 0.023 D1 5.30 - 0.209 - E1 4.40 - 0.173 - 0' 10' 0' 10' ECN: S-81965-Rev. A, 15-Sep-08 DWG: 5973 Notes 1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3. The package top may be smaller than the package bottom. 4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. Document Number: 91344 Revision: 15-Sep-08 www.vishay.com 1 Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) 4 3 E1 E Thermal PAD 4 b4 2 4 A 0.010 0.25 M C A B L2 4 c2 A 1 B D D1 A C 3 Seating plane 5 C L1 L3 (Datum A) C L B B A A1 3 x b2 View A - A 2xe c 3xb 0.010 0.25 M C A B Plating 5 b1, b3 Base metal Lead tip c1 (c) 5 (b, b2) Section B - B and C - C MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 - A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265 4.32 - 0.170 - b 0.64 0.89 0.025 0.035 E1 b1 0.65 0.79 0.026 0.031 e b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050 2.29 BSC 2.29 BSC c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Document Number: 91362 Revision: 15-Sep-08 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000