1
2
3
10
9
8
4
5
7
6
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND or N/C
GND
VREF
LM4050QML
www.ti.com
SNVS627G –JUNE 2010–REVISED JULY 2013
LM4050QML Precision Micropower Shunt Voltage Reference
Check for Samples: LM4050QML
1FEATURES APPLICATIONS
2• Low Dose Rate Qualified 100 krad(Si) • Control Systems
• SEFI Immune • Data Acquisition Systems
• SET Immune with 60μF CLOAD • Instrumentation
• CLOAD 0μF to 100μF • Process Control
• Fixed Reverse Breakdown Voltage of 2.500V, • Energy Management
5.000V DESCRIPTION
KEY SPECIFICATIONS The LM4050QML precision voltage reference is
available in a 10-Lead Ceramic CLGA package. The
• LM4050-2.5QML LM4050QML's design eliminates the need for an
– Output Voltage Tolerance IR = 100μA ±0.1% external stabilizing capacitor while ensuring stability
@ 25°C with a capacitive load, thus making the LM4050QML
easy to use. The LM4050-2.5QML has a 60 μA
– Low Temperature Coefficient 15 ppm/°C minimum and 15 mA maximum operating current.
– Low Output Noise 50 μVrms(typ) The LM4050-5.0QML has a 74 μA minimum and
– Wide Operating Current Range 60 μA to 15 mA maximum operating current.
15 mA The LM4050QML utilizes fuse and zener-zap reverse
• LM4050-5.0QML breakdown voltage trim during wafer sort to ensure
– Output Voltage Tolerance IR = 100μA ±0.1% that the prime parts have an accuracy of better than
@ 25°C ±0.1% at 25°C. Bandgap reference temperature drift
curvature correction and low dynamic impedance
– Low Temperature Coefficient 23 ppm/°C ensure stable reverse breakdown voltage accuracy
– Low Output Noise 100 μVrms(typ) over a wide range of operating temperatures and
– Wide Operating Current Range 74 μA to currents.
15 mA The LM4050QML operates over the temperature
range of -55°C to +125°C.
Connection Diagram
Figure 1. 10-Lead Ceramic CFP, Top View
See NAC0010A Package
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2010–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM4050QML
SNVS627G –JUNE 2010–REVISED JULY 2013
www.ti.com
PIN DESCRIPTIONS
Pin Number Pin Name Function
1 GND/NC Ground or No Connect
2 GND/NC Ground or No Connect
3 GND/NC Ground or No Connect
4 GND/NC Ground or No Connect
5 GND Ground
6 GND/NC Ground or No Connect
7 GND/NC Ground or No Connect
8 GND/NC Ground or No Connect
9 GND/NC Ground or No Connect
10 VREF Reference Voltage
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)
Reverse Current 20 mA
Forward Current 10 mA
Power Dissipation (TA= 25°C)(2) CLGA Package 467 mW
Lead Temperature (Soldering, 10 seconds) CLGA Package 260°C
Storage Temperature -65°C to +150°C
Package Weight (typical) CLGA Package 241mg
ESD Tolerance (3) Class 2 (2000V)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax −TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the
LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board mounted, is 214°C/W for the 10-Lead Ceramic CLGA
package.
(3) The human body model is a 100 pF capacitor discharged through a 1.5 kΩresistor into each pin.
Operating Ratings (1)
Temperature Range -55°C ≤TA≤+125°C
Reverse Current LM4050-2.5QML 60 μA to 15 mA
LM4050-5.0QML 74 μA to 15 mA
(1) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax −TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the
LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board mounted, is 214°C/W for the 10-Lead Ceramic CLGA
package.
Package Thermal Resistance
θJA θJA
Package θJC
(Still Air) (500LF/Min Air flow)
CLGA Package on 2 214°C/ W 147°C/ W 20.87°C/ W
layer, 1oz PCB
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SNVS627G –JUNE 2010–REVISED JULY 2013
Quality Conformance Inspection
MIL-STD-883, Method 5005 - Group A
Subgroup Description Temp ( C)
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
12 Setting time at +25
13 Setting time at +125
14 Setting time at -55
LM4050-2.5QML Electrical Characteristics SMD: 5962R0923561
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Sub-
Symbol Parameter Conditions Notes Typical(1) Min Max Units groups
Reverse Breakdown Voltage IR= 100 μA 2.500 V
IR= 60µA ±2.5
IR= 100μA ±2.5
IR= 1mA ±3.75 mV 1
IR= 10mA ±10
IR= 15mA ±13
IR= 60µA ±5
IR= 100μA±5
VRReverse Breakdown Voltage IR= 1mA ±6.25 mV 2
Tolerance IR= 10mA ±12.5
IR= 15mA ±14
IR= 60µA ±4.5
IR= 100μA±4.5
IR= 1mA ±5.75 mV 3
IR= 10mA ±13
IR= 15mA ±17.5
40.5 60 μA 1
IRMIN Minimum Operating Current 65 μA 2, 3
(1) Typicals are at TA= 25°C and represent most likely parametric norm.
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VHYST = lVR1 - VR2lx 106 ppm
VR
LM4050QML
SNVS627G –JUNE 2010–REVISED JULY 2013
www.ti.com
LM4050-2.5QML Electrical Characteristics SMD: 5962R0923561 (continued)
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Sub-
Symbol Parameter Conditions Notes Typical(1) Min Max Units groups
IR= 60µA ±3 ±15
Average Reverse Breakdown IR= 100μA ±3 ±16
Voltage Temperature IR= 1mA See(2) ±3 ±18 2
Coefficient IR= 10mA ±4 ±20
@ 25°C ≤TA≤125°C IR= 15mA ±6 ±22
ΔVR/ΔT ppm/°C
IR= 60µA ±3 ±18
Average Reverse Breakdown IR= 100μA ±3 ±19
Voltage Temperature IR= 1mA See(2) ±3.5 ±22 3
Coefficient IR= 10mA ±10 ±32
@−55°C ≤TA≤25°C IR= 15mA ±15 ±45
IR= 1 mA, f = 120 Hz,
ZRReverse Dynamic Impedance 0.3 Ω
IAC = 0.1 IR
0.1 Hz ≤f≤10 Hz 9 μVpp
VNOutput Noise Voltage 10 Hz ≤f≤10KHz 50 μVrms
CLOAD Load Capacitor Stable Over Temperature See(3) 60 0 100 µF
VHYST Thermal Hysteresis ΔT = −55°C to 125°C See(4) 1 ppm
(2) Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table.
(3) Capacitive load not required but improves SET stability. This parameter is ensured by design and/or characterization and is not tested in
production.
(4) Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C
measurement after cycling to temperature +125°C.
Where: VHYST = Thermal hysteresis expressed in ppm
VR= Nominal preset output voltage
VR1 = VRbefore temperature fluctuation
VR2 = VRafter temperature fluctuation.
Post Radiation @ 25°C(1)
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Qualification is performed with a 1.5X overtest. See for
TOTAL IONIZING DOSE details. Sub-
Symbol Parameter Conditions 30 krad 50 krad 100 krad groups
IR= 60μA
IR= 100μA
Reverse Breakdown Voltage
VRIR= 1mA Max +0.42% +0.67% +1.75% 1
Tolerance IR= 10mA
IR= 15mA
(1) Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table.
Post Radiation Tempco(1)
TYPICALS
Symbol Parameter Conditions 30 krad 50 krad 100 krad Units
Average Reverse Breakdown Voltage
Temperature Coefficient Drift @ 25°C 60μA≤IR≤15mA +41 +83 +144 ppm/°C
≤TA≤125°C
ΔVR/ΔTAverage Reverse Breakdown Voltage
Temperature Coefficient Drift @ 60μA≤IR≤15mA +46 +87 +166 ppm/°C
−55°C ≤TA≤25°C
(1) Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table.
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Operational Life Test Delta Parameters
This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within
the electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-
Group 5.
Symbol Parameter Conditions Note Min Max Units Temp
IR= 60µA -0.873 0.873
IR= 100µA -0.873 0.873
Reverse Breakdonwn
VRIR= 1mA -0.998 0.998 mV 1
Voltage Tolerance IR= 10mA -3.93 3.93
IR= 15mA -5 5
Minimum Operating
IRMIN -0.623 0.623 µA 1
Current
LM4050-5.0QML Electrical Characteristics SMD: 5962R0923562
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Sub-
Symbol Parameter Conditions Notes Typical(1) Min Max Units groups
Reverse Breakdown Voltage IR= 100 μA 5.000 V
IR= 74µA ±5.0
IR= 100μA ±5.0
IR= 1mA ±8 mV 1
IR= 10mA ±18
IR= 15mA ±20
IR= 74µA ±10
IR= 100μA±10
VRReverse Breakdown Voltage IR= 1mA ±12 mV 2
Tolerance IR= 10mA ±22.5
IR= 15mA ±28
IR= 74µA ±9
IR= 100μA±9
IR= 1mA ±11.5 mV 3
IR= 10mA ±29
IR= 15mA ±37
53 70 μA 1
IRMIN Minimum Operating Current 74 μA 2, 3
IR= 74µA ±9 ±23
Average Reverse Breakdown IR= 100μA ±9 ±25
Voltage Temperature IR= 1mA See(2) ±10 ±28 2
Coefficient IR= 10mA ±11 ±35
@ 25°C ≤TA≤125°C IR= 15mA ±11 ±40
ΔVR/ΔT ppm/°C
IR= 74µA ±10 ±25
Average Reverse Breakdown IR= 100μA ±10 ±29
Voltage Temperature IR= 1mA See(2) ±10 ±34 3
Coefficient IR= 10mA ±15 ±45
@−55°C ≤TA≤25°C IR= 15mA ±20 ±60
IR= 1 mA, f = 120 Hz,
ZRReverse Dynamic Impedance 0.5 Ω
IAC = 0.1 IR
VNOutput Noise Voltage 10 Hz ≤f≤10KHz 100 μVrms
(1) Typicals are at TA= 25°C and represent most likely parametric norm.
(2) Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table.
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VHYST = lVR1 - VR2lx 106 ppm
VR
LM4050QML
SNVS627G –JUNE 2010–REVISED JULY 2013
www.ti.com
LM4050-5.0QML Electrical Characteristics SMD: 5962R0923562 (continued)
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Sub-
Symbol Parameter Conditions Notes Typical(1) Min Max Units groups
CLOAD Load Capacitor Stable Over Temperature See(3) 60 0 100 µF
VHYST Thermal Hysteresis ΔT = -55°C to 125°C See(4) 20 ppm
(3) Capacitive load not required but improves SET stability. This parameter is ensured by design and/or characterization and is not tested in
production.
(4) Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C
measurement after cycling to temperature +125°C.
Where: VHYST = Thermal hysteresis expressed in ppm
VR= Nominal preset output voltage
VR1 = VRbefore temperature fluctuation
VR2 = VRafter temperature fluctuation.
Post Radiation @ 25°C(1)
The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Qualification is performed with a 1.5X overtest. See for
TOTAL IONIZING DOSE details. Sub-
Symbol Parameter Conditions 30 krad 50 krad 100 krad groups
IR= 74μA
IR= 100μA
Reverse Breakdown Voltage
VRIR= 1mA Max +0.42% +0.67% +1.75% 1
Tolerance IR= 10mA
IR= 15mA
(1) Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table.
Post Radiation Tempco(1)
TYPICALS
Symbol Parameter Conditions 30 krad 50 krad 100 krad Units
Average Reverse Breakdown Voltage
Temperature Coefficient Drift @ 25°C 74μA≤IR≤15mA +87 +166 +387 ppm/°C
≤TA≤125°C
ΔVR/ΔTAverage Reverse Breakdown Voltage
Temperature Coefficient Drift @ 74μA≤IR≤15mA +96 +162 +343 ppm/°C
−55°C ≤TA≤25°C
(1) Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table.
Operational Life Test Delta Parameters
This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within
the electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, Sub-
Group 5.
Symbol Parameter Conditions Note Min Max Units Temp
IR= 74µA −0.8 0.8
IR= 100µA −0.8 0.8
Reverse Breakdonwn
VRIR= 1mA −0.84 0.84 mV 1
Voltage Tolerance IR= 10mA −1.6 1.6
IR= 15mA −2.6 2.6
Minimum Operating
IRMIN −0.623 0.623 µA 1
Current
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10
0 1 2 3 4 5 6 7 8 9
REVERSE VOLTAGE (V)
REVERSE CURRENT (µA)
0
10
20
60
70
80
90
30
40
50
100
110
2.5V
5V
10V
LM4050QML
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SNVS627G –JUNE 2010–REVISED JULY 2013
Typical Performance Characteristics
Output Impedance Output Impedance
vs vs
Frequency Frequency
Figure 2. Figure 3.
Reverse Characteristics and
Minimum Operating Current 2.5V Thermal Hysteresis
Figure 4. Figure 5.
5.0V Thermal Hysteresis
Figure 6.
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Product Folder Links: LM4050QML
0 25 50 75 100 125 150
DOSE (krad)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
VR DRIFT (%)
Low Dose Rate Unbiased
Low Dose Rate Biased
LM4050QML
SNVS627G –JUNE 2010–REVISED JULY 2013
www.ti.com
Typical Radiation Characteristics
2.5V Low Dose Rate Drift at 10 mrad(Si)/s 5V Low Dose Rate Drift at 10 mrad(Si)/s
Figure 7. Figure 8.
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Functional Block Diagram
APPLICATIONS INFORMATION
The LM4050QML is a precision micro-power curvature-corrected bandgap shunt voltage reference. The
LM4050QML is available in the 10-Lead Ceramic CLGA package. The LM4050QML has been designed for
stable operation without the need of an external capacitor connected between the “+” pin and the “−” pin. If,
however, a bypass capacitor is used, the LM4050QML remains stable. The LM4050-2.5QML has a 60 μA
minimum and 15 mA maximum operating current. The LM4050-5.0QML has a 74 μA minimum and 15 mA
maximum operating current.
The typical thermal hysteresis specification is defined as the change in +25°C voltage measured after thermal
cycling. The device is thermal cycled to temperature -55°C and then measured at 25°C. Next the device is
thermal cycled to temperature +125°C and again measured at 25°C. The resulting VOUT delta shift between the
25°C measurements is thermal hysteresis. Thermal hysteresis is common in precision references and is induced
by thermal-mechanical package stress. Changes in environmental storage temperature, operating temperature
and board mounting temperature are all factors that can contribute to thermal hysteresis.
In a conventional shunt regulator application (Figure 12) , an external series resistor (RS) is connected between
the supply voltage and the LM4050QML. RSdetermines the current that flows through the load (IL) and the
LM4050QML (IQ). Since load current and supply voltage may vary, RSshould be small enough to supply at least
the maximum ensured IRMIN (spec. table) to the LM4050QML even when the supply voltage is at its minimum and
the load current is at its maximum value. When the supply voltage is at its maximum and ILis at its minimum, RS
should be large enough so that the current flowing through the LM4050QML is less than 15 mA.
RSis determined by the supply voltage, (VS), the load and operating current, (ILand IQ), and the LM4050QML's
reverse breakdown voltage, VR.
(1)
Radiation Environments
Careful consideration should be given to environmental conditions when using a product in a radiation
environment.
TOTAL IONIZING DOSE
Radiation hardness assured (RHA) products are those part numbers with a total ionizing dose (TID) level
specified in the Ordering Information table on the front page. Testing and qualification of these products is done
on a wafer level according to MIL-STD-883, Test Method 1019. Wafer level TID data is available with lot
shipments.
Testing and qualification is performed at the 30, 50 and 100 krad TID levels at a dose rate of 10 mrad/s, using a
1.5X overtest at each TID level. For the 30 krad level units are tested to 50 krad, for 50 krad units are tested to
80 krad and for 100 krad units are tested to 150 krad, with all parameters remaining inside the post irradiation
test limits.
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LM4050-5.0QML
DAC121S101QML
DIN
SCLK
SYNC VOUT = 0V to 5V
60 PF
+12V
20 k:
VZ
LM4050QML
LM4050QML
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SNVS627G –JUNE 2010–REVISED JULY 2013
SINGLE EVENT EFFECTS (SEE)
One time single event effects characterization was performed according to EIA/JEDEC Standard, EIA/JEDEC57.
A test report is available upon request.
SINGLE EVENT TRANSIENTS (SET)
With a 60 µF capacitor on the output, no single event transients were seen at the highest linear energy transfer
(LET) tested: 59 MeV-cm2/mg.
SET characterization with other capacitor values is in the SEE report, available upon request.
SINGLE EVENT FUNCTIONAL INTERRUPT (SEFI)
No single event functional interrupts were detected to the highest linear energy transfer (LET) tested: 100 MeV-
cm2/mg.
Typical Applications
Figure 12. Shunt Regulator
Figure 13. The LM4050QML as a power supply and reference
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60 PF
12V
LM4050-5.0QML
2.2k
VA
30 PF
VD
IN0
IN7
IN6
IN5
IN4
IN3
IN2
IN1 SCLK
CS
DIN
DOUT
ADC128S102QML
VZ
LM4050QML
SNVS627G –JUNE 2010–REVISED JULY 2013
www.ti.com
Figure 14. The LM4050QML as a power supply and reference
The LM4050QML is a good choice as a power regulator for the DAC121S101QML or ADC128S102QML. The
minimum resistor value in the circuit of Figure 13 or Figure 14 should be chosen such that the maximum current
through the LM4050QML does not exceed its 15 mA rating. The conditions for maximum current include the input
voltage at its maximum, the LM4050QML voltage at its minimum, the resistor value at its minimum due to
tolerance, and the DAC121S101QML or ADC128S102QML draws zero current. The maximum resistor value
must allow the LM4050QML to draw more than its minimum current for regulation plus the maximum
DAC121S101QML or ADC128S102QML current in full operation. The conditions for minimum current include the
input voltage at its minimum, the LM4050QML voltage at its maximum, the resistor value at its maximum due to
tolerance, and the DAC121S101QML or ADC128S102QML draws its maximum current. These conditions can be
summarized as
R(min) = ( VIN(max) −VZ(min) / (IA(min) + IZ(max) (2)
and R(max) = ( VIN(min) −VZ(max) / (IA(max) + IZ(min) (3)
where VZ(min) and VZ(max) are the nominal LM4050QML output voltages ± the LM4050QML output tolerance
over temperature, IZ(max) is the maximum allowable current through the LM4050QML, IZ(min) is the minimum
current required by the LM4050QML for proper regulation, IA(max) is the maximum DAC121S101QML or
ADC128S102QML supply current, and IA(min) is the minimum DAC121S101QML or ADC128S102QML supply
current.
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LM4050-2.5QML
LM4050-10QML
LM4050QML
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SNVS627G –JUNE 2010–REVISED JULY 2013
Nominal clamping voltage is ±11.5V (LM4050QML's reverse breakdown voltage +2 diode VF).
Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.
Figure 15. Bounded amplifier
The bounding voltage is ±4V with the LM4050-2.5QML
(LM4050QML's reverse breakdown voltage + 3 diode VF).
Figure 16. Protecting Op Amp input
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LM4050-2.5QML
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www.ti.com
Figure 17. Precision 1 μA to 1 mA Current Sources
(4)
Engineering Samples (Parts with MPR suffix)
Engineering samples are available for order and are identified by the "MPR" in the orderable device name (see
Package Options Addendum at the end of the datasheet). Engineering (MPR) samples meet the performance
specifications of the datasheet at room temperature only and have not received the full space production flow or
testing. Engineering samples may be QCI rejects that failed tests that would not impact the performance at room
temperature, such as radiation or reliability testing.
Revision History
Date Released Revision Section Changes
New Product Low Dose Qualified LM4050WG2.5RLQV Initial
08/20/2010 A Initial Release Release
General Description, Features, Key Specifications, Ordering
General Description, Features, Table, Operating Ratings, Package Thermal Table, Electrical
Key Specifications, Ordering Section — Added the 5.0 V option information for all
01/20/2012 B Table, Operating Ratings, sections. Added new NSIDS LM4050WG5.0RLQV and
Package Thermal Table, LM4050WG5.0–MPR Voltage option to data sheet. Revision
Electrical Section A will be Archived.
Electrical Section — Updated Delta Vr/Delta T for typical
05/23/2012 C Electrical Section limits for both the 2.5 and 5.0 versions. Revision B will be
Archived.
04/01/2013 F All Changed layout of National Data Sheet to TI format.
Changed 5V and 2.5V Post Radiation limits so they are the
Post Radiation @ 25°C; Added
07/12/2013 G same for both voltages. Added information about orderable
Engineering Samples engineering samples.
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PACKAGE OPTION ADDENDUM
www.ti.com 12-Jul-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
5962R0923561VZA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM4050WG
2.5RLQV Q
5962R09235
61VZA ACO
61VZA >T
LM4050WG2.5-MPR ACTIVE CFP NAC 10 TBD Call TI Call TI 25 LM4050WG
2.5-MPR
ES ACO
ES >T
LM4050WG2.5RLQV ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM4050WG
2.5RLQV Q
5962R09235
61VZA ACO
61VZA >T
LM4050WG5.0RLQV PREVIEW CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM4050WG
5.0RLQV Q
5962R09235
62VZA ACO
62VZA >T
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
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(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
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