MBR25xxCT, MBRF25xxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB * Power pack * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop 2 3 1 2 * High forward surge capability 3 * High frequency operation 1 MBR2535CT MBR2545CT * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 MBRF2545CT PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 2 x 12.5 A VRRM 35 V, 45 V IFSM 150 A VF 0.73 V at 30 A TJ max. 150 C Package TO-220AB, ITO-220AB Diode variation Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB Epoxy meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR2535CT MBR2545CT Maximum repetitive peak reverse voltage VRRM 35 45 Working peak reverse voltage VRWM 35 45 Maximum DC blocking voltage VDC 35 45 Maximum average forward rectified current at TC = 130 C total device per diode IF(AV) 25 12.5 UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 Peak repetitive reverse surge current per diode at tp = 2 s, 1 kHz IRRM 1.0 Peak non-repetitive reverse energy (8/20 s waveform) per diode ERSM 25 mJ VC 25 kV dV/dt 10 000 V/s TJ -65 to +150 Storage temperature range TSTG -65 to +175 Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction temperature range A C V Revision: 28-Nov-17 Document Number: 88675 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25xxCT, MBRF25xxCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode SYMBOL TC = 25 C MBR2535CT MBR2545CT 0.82 V VF (1) IF = 30 A TC = 125 C 0.73 TC = 25 C Maximum instantaneous reverse current at blocking voltage per diode UNIT 0.2 IR (1) mA TC = 125 C 40 Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR MBRF UNIT RJC 1.5 4.5 C/W Typical thermal resistance from junction to case per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) TO-220AB MBR2545CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF2545CT-E3/45 1.99 45 50/tube Tube TO-220AB MBR2545CT-E3/4W 1.85 4W 50/tube Tube Note 35 V device available in TO-220AB package only (1) RATINGS AND CHARACTERISTICS CURVES (TC = 25 C unless otherwise noted) 30 150 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 24 18 12 6 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 125 100 75 50 25 0 0 0 50 100 150 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 28-Nov-17 Document Number: 88675 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25xxCT, MBRF25xxCT www.vishay.com Vishay General Semiconductor 100 T J = 150 C 10 Pulse Width = 300 s 1 % Duty Cycle 1.0 T J = 25 C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Transient Thermal Impedance (C/W) Instantaneous Forward Current ( A) 100 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Instantaneous R everse Current ( mA) 100 10 T J = 125 C 1 T J = 75 C 0.1 0.01 T J = 25 C 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Junction Capacitance (pF) 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 28-Nov-17 Document Number: 88675 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25xxCT, MBRF25xxCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45 REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 7 REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 3 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 7 REF. 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) Revision: 28-Nov-17 Document Number: 88675 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: MBR2535CT MBR2545CT MBRB2535CT MBRB2545CT VS-MBRB2535CTTRRP VS-MBRB2545CTTRRP VSMBRB2545CTTRLP VS-MBRB2535CTTRLP MBR2535CT/45 MBR2535CT-E3/45 MBR2535CTHE3/45 MBR2545CT/45 MBR2545CT-E3/45 MBR2545CTHE3/45 MBR2550CT/45 MBR2560CT/45 MBR2560CT-E3/45 MBR2560CTHE3/45 MBRB2535CT/31 MBRB2535CT/45 MBRB2535CT/81 MBRB2535CT-E3/31 MBRB2535CTE3/45 MBRB2535CT-E3/81 MBRB2535CTHE3/45 MBRB2535CTHE3/81 MBRB2545CT/31 MBRB2545CT/45 MBRB2545CT/81 MBRB2545CT-E3/31 MBRB2545CT-E3/45 MBRB2545CT-E3/81 MBRB2545CTHE3/45 MBRB2545CTHE3/81 MBRB2550CT/31 MBRB2550CT/45 MBRB2550CT/81 MBRB2550CT-E3/31 MBRB2550CTE3/45 MBRB2550CT-E3/81 MBRB2550CTHE3/45 MBRB2550CTHE3/81 MBRB2560CT/31 MBRB2560CT/45 MBRB2560CT/81 MBRB2560CT-E3/31 MBRB2560CT-E3/45 MBRB2560CT-E3/81 MBRB2560CTHE3/45 MBRB2560CTHE3/81 MBRF2535CT-E3/45 MBRF2535CTHE3/45 MBRF2545CT-E3/45 MBRF2545CTHE3/45 MBRF2550CT-E3/45 MBRF2550CTHE3/45 MBRF2560CT-E3/45 MBRF2560CTHE3/45 MBRB2535CTTRL MBRB2535CTTRR MBRB2545CTTRL MBRB2545CTTRR MBR2545CT-E3/4W MBRB2545CTHE3-/81 VSMBR2535CTPBF VS-MBRB2535CTPBF MBR2535CT-1 MBR2545CT-1