MBR25xxCT, MBRF25xxCT
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Revision: 28-Nov-17 1Document Number: 88675
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Dual Common Cathode Schottky Rectifier
FEATURES
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 12.5 A
VRRM 35 V, 45 V
IFSM 150 A
VF0.73 V at 30 A
TJ max. 150 °C
Package TO-220AB, ITO-220AB
Diode variation Common cathode
TO-220AB
MBR2535CT
MBR2545CT
ITO-220AB
MBRF2545CT
1
23
123
CASE
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2535CT MBR2545CT UNIT
Maximum repetitive peak reverse voltage VRRM 35 45
VWorking peak reverse voltage VRWM 35 45
Maximum DC blocking voltage VDC 35 45
Maximum average forward rectified current
at TC = 130 °C
total device IF(AV)
25 A
per diode 12.5
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode IFSM 150
A
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz IRRM 1.0
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode ERSM 25 mJ
Electrostatic discharge capacitor voltage human body model: C = 100 pF,
R = 1.5 kVC25 kV
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction temperature range TJ-65 to +150 °C
Storage temperature range TSTG -65 to +175
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V
MBR25xxCT, MBRF25xxCT
www.vishay.com Vishay General Semiconductor
Revision: 28-Nov-17 2Document Number: 88675
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) 35 V device available in TO-220AB package only
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR2535CT MBR2545CT UNIT
Maximum instantaneous forward voltage
per diode IF = 30 A
TC = 25 °C
VF (1)
0.82 V
TC = 125 °C 0.73
Maximum instantaneous reverse current at
blocking voltage per diode
TC = 25 °C
IR (1)
0.2
mA
TC = 125 °C 40
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF UNIT
Typical thermal resistance from junction to case per diode RJC 1.5 4.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR2545CT-E3/45 (1) 1.85 45 50/tube Tube
ITO-220AB MBRF2545CT-E3/45 1.99 45 50/tube Tube
TO-220AB MBR2545CT-E3/4W 1.85 4W 50/tube Tube
0
6
18
12
30
050 100 150
24
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
0
25
75
50
125
100
150
1 100
10
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
MBR25xxCT, MBRF25xxCT
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Revision: 28-Nov-17 3Document Number: 88675
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
10
1.0
0.1
0.01
02.00.15.01.0 0.40.3 0.6 0.7 0.8 0.9
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
)A( tnerruC dr
a
wro
F su
o
enatn
a
t
s
n
I
Instantaneous Forward Voltage (V)
1
10
100
0.01
0.001
0.1
002010 406080
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
)Am( tnerru
C esreve
R suoenatnatsnI
Percent of Rated Peak Reverse Voltage (%)
101 100
1000
10 000
100
0.1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
)Fp( ecnatic
apaC noitcnuJ
0.01 101 100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
MBR25xxCT, MBRF25xxCT
www.vishay.com Vishay General Semiconductor
Revision: 28-Nov-17 4Document Number: 88675
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) max.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
132
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.057 (1.45)
0.045 (1.14)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
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Revision: 08-Feb-17 1Document Number: 91000
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