2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features * Current-Gain - Bandwidth-Product @ IC = 1.0 Adc * * http://onsemi.com 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS - 115, 180 WATTS fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP Safe Operating Area - Rated to 60 V and 120 V, Respectively Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage Symbol 2N3055A MJ15015, MJ15016 Collector-Base Voltage Value Unit VCEO Vdc 60 120 VCBO 2N3055A MJ15015, MJ15016 Vdc 100 200 Collector-Emitter Voltage Base Reversed Biased 2N3055A MJ15015, MJ15016 VCEV Emitter-Base Voltage MARKING DIAGRAMS Vdc 100 200 VEBO 7.0 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C 2N3055A PD 115 0.65 W W/_C 2N3055AG AYWW MEX MJ1501xG AYWW MEX 180 1.03 Total Device Dissipation @ TC = 25_C Derate above 25_C MJ15015, MJ15016 Operating and Storage Junction Temperature Range TO-204AA (TO-3) CASE 1-07 STYLE 1 _C TJ, Tstg -65 to +200 Characteristics Symbol Max Max Unit Thermal Resistance, Junction-to-Case RqJC 1.52 0.98 _C/W THERMAL CHARACTERISTICS 2N3055A = Device Code MJ1501x = Device Code x = 5 or 6 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A) See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 April, 2006 - Rev. 6 1 ORDERING INFORMATION Publication Order Number: 2N3055A/D 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIII IIIII IIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIII IIIII IIII III IIII IIIIIIIIIIIII IIIIIIIII IIIII IIII III IIII IIIIIIIIIIIII IIIIIIIII IIIII IIII III IIII IIIIIIIIIIIII IIIIIIIII IIIII IIII IIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 120 - - Vdc - - 0.7 0.1 - - 5.0 1.0 - - 30 6.0 - - 5.0 0.2 1.95 3.0 - - 10 20 5.0 70 70 - - - - 1.1 3.0 5.0 OFF CHARACTERISTICS (Note 2) Collector-Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N3055A MJ15015, MJ15016 Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) 2N3055A MJ15015, MJ15016 Collector Cutoff Current (Note 3) (VCEV = Rated Value, VBE(off) = 1.5 Vdc) 2N3055A MJ15015, MJ15016 Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) 2N3055A MJ15015, MJ15016 Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) 2N3055A MJ15015, MJ15016 IEBO Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non-repetitive) 2N3055A MJ15015, MJ15016 (VCE = 60 Vdc) IS/b ICEO ICEV mAdc ICEV mAdc mAdc mAdc SECOND BREAKDOWN (Note 3) Adc ON CHARACTERISTICS (Note 2 and 3) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 0.7 1.8 Vdc fT 0.8 2.2 6.0 18 MHz Cob 60 600 pF td - 0.5 ms tr - 4.0 ms ts - 3.0 ms tf - 6.0 ms DYNAMIC CHARACTERISTICS (Note 3) Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) 2N3055A, MJ15015 MJ15016 Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (2N3055A only) (Note 3) RESISTIVE LOAD Delay Time Rise Time Storage Time (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, tp = 25 ms Duty Cycle v 2% Fall Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 3. Indicates JEDEC Registered Data. (2N3055A) http://onsemi.com 2 PD(AV), AVERAGE POWER DISSIPATION (W) 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) 200 150 MJ15015 MJ15016 100 2N3055A 50 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Derating 200 TJ = 150C hFE , DC CURRENT GAIN 100 70 50 -55 C 30 20 25C VCE = 4.0 V 10 7 5 3 2 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 2.8 TJ = 25C 2.4 2 IC = 1 A 1.6 0.8 0.4 0 0.005 0.01 0.02 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TC = 25C V, VOLTAGE (VOLTS) 2.5 2 1.5 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V 0.5 VCE(sat) @ IC/IB = 10 0 0.2 0.3 0.5 0.7 1 2 3 5 7 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 5 Figure 3. Collector Saturation Region 3.5 1 8A 1.2 Figure 2. DC Current Gain 3 4A 10 20 10 5.0 MJ15016 2.0 2N3055A MJ15015 1.0 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) Figure 4. "On" Voltages Figure 5. Current-Gain -- Bandwidth Product http://onsemi.com 3 2.0 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) 10 7 5 VCC +30 V t, TIME (s) 3 7.5 W 25 ms +13 V SCOPE 30 W 0 2 tr 1 0.7 0.5 0.3 1N6073 -11 V VCC = 30 V IC/IB = 10 TJ = 25C 0.2 tr, tf 10 ns DUTY CYCLE = 1.0% -5 V 0.1 td 0.2 10 7 5 400 3 200 7 10 15 TJ = 25C ts 2 tf 0.1 0.7 0.5 0.3 0.2 0.1 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) Figure 7. Turn-On Time C, CAPACITANCE (pF) t, TIME (s) Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) 0.3 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25C 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 2N3055A MJ15015 MJ15016 Cib 100 50 Cob 30 7 10 20 1.0 15 Figure 8. Turn-Off Times 2.0 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances http://onsemi.com 4 500 1000 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) COLLECTOR CUT-OFF REGION NPN PNP 10,000 1000 VCE = 30 V 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VCE = 30 V 100 TJ = 150C 10 100C 1.0 IC = ICES REVERSE 0.1 FORWARD 100 10 TJ = 150C 1.0 100C IC = ICES 0.1 REVERSE 0.01 FORWARD 25C 25C 0.01 +0.2 +0.1 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.001 -0.2 -0.5 Figure 10. 2N3055A, MJ15015 +0.4 0 +0.1 +0.2 +0.3 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.5 Figure 11. MJ15016 20 20 30 ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) -0.1 10 100 ms 1 ms 5 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 2 1 100 ms dc 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1ms 10 5.0 1.0ms 2.0 1.0 0.5 0.2 100 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 Figure 12. Forward Bias Safe Operating Area 2N3055A 20 30 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N3055AG MJ15015 MJ15015G MJ15016 MJ15016G 120 The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. ORDERING INFORMATION 2N3055A dc Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Device 100ms Package Shipping TO-204 TO-204 (Pb-Free) 100 Units / Tray TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) http://onsemi.com 5 100 Units / Tray 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N3055A/D