© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6 1Publication Order Number:
2N3055A/D
2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
Current−Gain − Bandwidth−Product @ IC = 1.0 Adc
fT= 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage 2N3055A
MJ15015, MJ15016
VCEO 60
120
Vdc
Collector−Base Voltage 2N3055A
MJ15015, MJ15016
VCBO 100
200
Vdc
Collector−Emitter Voltage Base
Reversed Biased 2N3055A
MJ15015, MJ15016
VCEV 100
200
Vdc
Emitter−Base Voltage VEBO 7.0 Vdc
Collector Current − Continuous IC15 Adc
Base Current IB7.0 Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C 2N3055A
Total Device Dissipation @ TC = 25_C
Derate above 25_CMJ15015, MJ15016
PD115
0.65
180
1.03
W
W/_C
Operating and Storage Junction
Temperature Range TJ, Tstg 65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATT
S
http://onsemi.com
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
Preferred devices are recommended choices for future use
and best overall value.
MJ1501xG
AYWW
MEX
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) 2N3055A
(IC = 200 mAdc, IB = 0) MJ15015, MJ15016
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
60
120
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A
(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
0.7
0.1
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (Note 3) 2N3055A
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEV
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
5.0
1.0
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A
TC = 150_C) MJ15015, MJ15016
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEV
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
30
6.0
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Emitter Cutoff Current 2N3055A
(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016
ÎÎÎÎÎ
Î
ÎÎÎ
Î
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎ
Î
Î
Î
5.0
0.2
ÎÎÎÎ
Î
ÎÎ
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non−repetitive) 2N3055A
(VCE = 60 Vdc) MJ15015, MJ15016
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IS/b
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.95
3.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2 and 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
10
20
5.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
70
70
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
1.1
3.0
5.0
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.7
ÎÎÎ
Î
Î
Î
ÎÎÎ
1.8
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product 2N3055A, MJ15015
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.8
2.2
ÎÎÎ
Î
Î
Î
ÎÎÎ
6.0
18
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
60
ÎÎÎ
Î
Î
Î
ÎÎÎ
600
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RESISTIVE LOAD
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
ÎÎÎÎÎ
ÎÎÎÎÎ
td
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
ÎÎÎÎ
ÎÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
4.0
ÎÎÎÎ
ÎÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎ
ÎÎÎÎÎ
tf
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
6.0
ÎÎÎÎ
ÎÎÎÎ
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
http://onsemi.com
3
200
00 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
MJ15015
MJ15016
P , AVERAGE POWER DISSIPATION (W)
D(AV)
150
100
50 2N3055A
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
Figure 2. DC Current Gain
200
0.2
IC, COLLECTOR CURRENT (AMP)
20.3 0.5 0.7 1 2 3 5 7 15
70
30
10
5
100
50
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
−55 °C
VCE = 4.0 V
20
7
3
10
Figure 3. Collector Saturation Region
2.8
0.005
IB, BASE CURRENT (AMP)
00.01 0.02 0.05 0.1 0.2 0.5 1 2 5
2
1.6
0.8
0.4
IC = 1 A
TJ = 25°C
4 A
2.4
1.2
8 A
f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
T
3.5
0.2
IC, COLLECTOR CURRENT (AMP)
0.3 0.5 0.7 1 2 3 5 7 20
2.5
1.5
1
0.5
0
TC = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
Figure 4. “On” Voltages
3
2
10
VBE(on) @ VCE = 4 V
10
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3 0.5 1.0 2.0
5.0
2.0
1.0
MJ15016
Figure 5. Current−Gain — Bandwidth Product
2N3055A
MJ15015
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
http://onsemi.com
4
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
+13 V
25 ms
0
−11 V
30
W
−5 V
1N6073
SCOPE
VCC
+30 V
7.5 W
tr, tf 10 ns
DUTY CYCLE = 1.0%
10
0.2
Figure 7. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
7
5
3
2
1
0.7
0.5
0.1 0.3 0.5 0.7 1 2 3 7 15
VCC = 30 V
IC/IB = 10
TJ = 25°C
0.3
0.2
510
tr
td
10
0.2
Figure 8. Turn−Off Times
IC, COLLECTOR CURRENT (AMPS)
7
5
3
2
0.1
0.5
0.1 0.3 0.5 0.7 1 3 5 15
VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25°C
0.3
t, TIME (s)μ
tf
ts
2
0.7
0.2
710
400
1.0
Figure 9. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
20 20 50 100 200 500 10002.0 5.0 10
C, CAPACITANCE (pF)
200
100
50
30
TJ = 25°C
Cib
Cob
2N3055A
MJ15015
MJ15016
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
http://onsemi.com
5
COLLECTOR CUT−OFF REGION
10,000
+0.2
Figure 10. 2N3055A, MJ15015
VBE, BASE−EMITTER VOLTAGE (VOLTS)
1000
100
10
1.0
, COLLECTOR CURRENT (A)μIC
0.1
0.01 +0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
1000
−0.2
Figure 11. MJ15016
VBE, BASE−EMITTER VOLTAGE (VOLTS)
100
10
1.0
0.1
, COLLECTOR CURRENT (A)μIC
0.01
0.001 −0.1 0 +0.1 +0.2 +0.3
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
+0.4 +0.5
20
Figure 12. Forward Bias Safe Operating Area
2N3055A
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
5
110 20 10060
2
IC, COLLECTOR CURRENT (AMPS)
dc
30 ms
1 ms
100 ms
100 ms
20
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
5.0
0.215 20 10060
2.0
IC, COLLECTOR CURRENT (AMP)
dc
0.1ms
100ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1.0
0.5
30 120
1.0ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device Package Shipping
2N3055A TO−204 100 Units / Tray
2N3055AG TO−204
(Pb−Free)
MJ15015 TO−204
100 Units / Tray
MJ15015G TO−204
(Pb−Free)
MJ15016 TO−204
MJ15016G TO−204
(Pb−Free)
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B−−− 1.050 −−− 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N−−− 0.830 −−− 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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