ZMV829/A/B to ZMV835/A/B SOD323 SILICON VARIABLE CAPACITANCE DIODES ISSUE 1 - NOVEMBER 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) * Miniature surface mount package C A 3 SOD323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Forward Current IF Power Dissipation at T amb =25C P tot Operating and Storage Temperature Range T j :T stg MAX UNIT 200 mA 330 mW -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb =25C) PARAMETER SYMBOL MIN Reverse Breakdown Voltage VBR TYP MAX 25 Reverse Voltage Leakage IR 0.2 20 Temperature Coefficient of Capacitance 300 400 UNIT CONDITIONS V I R =10A nA V R=20V ppm/C V R=3V, f=1MHz TUNING CHARACTERISTICS (at Tamb =25C) Nominal Capacitance (pF) VR=2V, f=1MHz PART NO MIN NOM MAX Minimum Q @ VR=3V f=50MHz Capacitance Ratio C2 / C20 at f=1MHz MIN MAX ZMV829A 7.38 8.2 9.02 250 4.3 5.8 ZMV830A 9.0 10.0 11.0 300 4.5 6.0 ZMV831A 13.5 15.0 16.5 300 4.5 6.0 ZMV832A 19.8 22.0 24.2 200 5.0 6.5 ZMV833A 29.7 33.0 36.3 200 5.0 6.5 ZMV834A 42.3 47.0 51.7 200 5.0 6.5 ZMV835A 61.2 68.0 74.8 100 5.0 6.5 Note: No suffix 20% (e.g. ZMV830), suffix B 5% (e.g. ZMV830B) Spice parameter data is available upon request for these devices ZMV829/A/B to ZMV835/A/B 200 Diode Capacitance (pF) 100 835A 834A 833A 832A 831A 830A 829A 10 1 1 10 100 Reverse Voltage (Volts) Diode Capacitance Device Partmark Device Partmark Device Partmark ZMV829 DA ZMV829A AA ZMV829B CA ZMV830 DB ZMV830A AB ZMV830B CB ZMV831 DC ZMV831A AC ZMV831B CC ZMV832 DD ZMV832A AD ZMV832B CD ZMV833 DE ZMV833A AE ZMV833B CE ZMV834 DF ZMV834A AF ZMV834B CF ZMV835 DG ZMV835A AG ZMV835B CG