SOD323 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 1 – NOVEMBER 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low IR
Enabling Excellent Phase Noise Performance
(IR Typically <200pA at 25V)
* Miniature surface mount package
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL MAX UNIT
Forward Current IF200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
=25°C)
PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS
Reverse Breakdown
Voltage
VBR 25 V IR=10µA
Reverse Voltage Leakage IR0.2 20 nA VR=20V
Temperature Coefficient
of Capacitance η300 400 ppm/°C VR=3V, f=1MHz
TUNING CHARACTERISTICS (at Tamb
=25°C)
PART NO
Nominal Capacitance (pF)
VR=2V, f=1MHz
Minimum
Q
@ VR=3V
f=50MHz
Capacitance Ratio
C2 / C20
at f=1MHz
MIN NOM MAX MIN MAX
ZMV829A 7.38 8.2 9.02 250 4.3 5.8
ZMV830A 9.0 10.0 11.0 300 4.5 6.0
ZMV831A 13.5 15.0 16.5 300 4.5 6.0
ZMV832A 19.8 22.0 24.2 200 5.0 6.5
ZMV833A 29.7 33.0 36.3 200 5.0 6.5
ZMV834A 42.3 47.0 51.7 200 5.0 6.5
ZMV835A 61.2 68.0 74.8 100 5.0 6.5
Note:
No suffix ±20% (e.g. ZMV830), suffix B ± 5% (e.g. ZMV830B)
Spice parameter data is available upon request for these devices
C
A
SOD323
1
3
ZMV829/A/B
to
ZMV835/A/B
110 100
1
10
100
200
829A
835A
834A
833A
832A
831A
830A
Diode Capacitance (pF)
Diode Capacitance
Reverse Voltage (Volts)
ZMV829/A/B
to
ZMV835/A/B
Device Partmark Device Partmark Device Partmark
ZMV829 DA ZMV829A AA ZMV829B CA
ZMV830 DB ZMV830A AB ZMV830B CB
ZMV831 DC ZMV831A AC ZMV831B CC
ZMV832 DD ZMV832A AD ZMV832B CD
ZMV833 DE ZMV833A AE ZMV833B CE
ZMV834 DF ZMV834A AF ZMV834B CF
ZMV835 DG ZMV835A AG ZMV835B CG
