R
V6301
Copyright © 2004, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter Symbol Conditions
Voltage at VDD to VSS V
DD -0.3V to +10V
Minimum voltage at RES or
RES Vmin V
SS – 0.3V
Maximum voltage at RES or
RES Vmax V
DD + 0.3V
Storage Temperature Range TSTO -65°C to +150°C
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability or
cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, it is advised that normal
precautions be taken as for any other CMOS component.
Unless otherwise specified, proper operation can only occur
when all terminal voltages are kept within the voltage range.
Operating Conditions
Parameter Symbol Min Max Unit
Operating Temperature 1) T
A -40 +125 °C
Positive Supply Voltage VDD 1 8 V
Table 2
1) The maximum operating temperature is confirmed by
sampling at initial device qualification.
Electrical Characteristics
TA = -40 to +85°C, unless otherwise specified
Parameter Symbol Test Conditions Min.
Min @
25°C Typ. Max. @
25°C Max. Unit
Supply current 1) I
DD V
DD = 2V 3) 1.5 2.1 3.1 µA
I
DD V
DD = 5V 3.0 3.9 5.7 µA
I
DD V
DD = 8V 5.2 6.8 10.0 µA
Threshold voltage VTH Version: A,G,M 1.77 1.84 1.95 2.04 2.17 V
V
TH Version: B,H,N 2.09 2.18 2.32 2.41 2.55 V
V
TH Version: C,I,O 2.48 2.59 2.73 2.86 3.03 V
V
TH Version: D,J,P 3.11 3.23 3.42 3.59 3.80 V
V
TH Version: E,K,Q 3.55 3.70 3.88 4.08 4.32 V
V
TH Version: F,L,R 4.05 4.22 4.42 4.67 4.95 V
Threshold hysteresis VHYS 25 mV
RES Output Low Level VOL V
DD = 5V, IOL = 8mA 175 400 mV
V
OL V
DD = 3V, IOL = 4mA 140 300 mV
V
OL V
DD = 1V, IOL = 50µA 20 90 mV
RES Output High Level VOH V
DD = 5V, IOH = -8mA 4.3 4.5 V
V
OH V
DD = 3V, IOH = -4mA 2.3 2.6 V
V
OH V
DD = 1V, IOH = -100µA 850 950 mV
Output leakage current2) I
LEAK V
DD = 8V 0.05 1 µA
Table 3
1) RES or RES open
2) Only for Open drain versions
3) Versions A, G and M are tested at VDD = 1.8V
Timing Characteristics
VDD = 5.0V, TA = -40 to +85°C, unless otherwise specified
Parameter Symbol Test Conditions Min. Typ. Max. Units
Power on reset time tPOR 140 290 560 ms
Sensitivity 4) t
SEN for VDD = 5V to 3V in 5µs 20 0.8 tR µs
Reaction time 4) t
R for VDD = 5V to 3V in 5µs 22 75 150 µs
Table 4
4) Tested on versions with VTH higher than 3V