Central . C2ZT122 NPN Semiconductor Corp. CZT127 PNP COMPLEMENTARY SILICON DESCRIPTION: POWER DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR C2T 122, C2ZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. SOT-223 CASE MAXIMUM RATINGS: (T,a=25C) SYMBOL UNITS Collector-Base Voltage VcBO 100 V Coilector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 Vv Collector Current Io 5.0 A Peak Collector Current Iom 8.0 A Base Current IB 120 mA Power Dissipation Pp 2.0 Ww Operating and Storage Junction Temperature T JT stg -65 to +150 C Thermal Resistance OJA 62.5 C/W ELECTRICAL CHARACTERISTICS: (Ta=25C) SYMBOL TEST CONDITIONS MIN MAX UNITS IcEO VCE=50V 500 pA IcBoO Vcp=100V 200 pA lEBO Vep=5.0V 2.0 mA BVcEQ Iq=30mA 100 Vv VCE(SAT) Ic=3.0A, Ip=12mA 2.0 V VCE(SAT) Ic=5.0A, Ip=20mA 4.0 Vv VBE(ON) VoE=3.0V, Ic=3.0A 2.5 Vv DEE VcE=3.0V, Ic=500MA 1000 hee VcEe=3.0V, Io=3.0A 4000 fT Voe=4.0V, Io=3.0A, f=1.0MHz 4.0 MHz Cob Vop=10V, Ie=0, f=1.0MHz (CZT122) 200 pF Cob Vop=10V, Ie=0, f=1.0MHz (CZT127) 300 pF 384All dimensions in inches (mm). .083(1.80) -067(1.70) -009(0.23) 7013(0.33) ~y .033(0.84) A -041(1.04) .024(0.61) -091(0.79} .248(6,30) .264(6.71) .114(2.90) 122(3.10) I -130(3.90) .264 .140(3.71) .287( J (ie | .181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR 385 | 3 .091(2.31) leo 6.71 7.28) DATA SHEET Ri