| 83 SOLITRON DEVICES ING Bababo2e OOOLALe & RADIATION RESISTANT NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES .. 66 01912 _ D 7 33-4. HIGH POWER RADIATION EXPOSURE LEVEL TO 5x 1014 nvt TOTAL NEUTRON FLUX GREATER THAN 10 KEV FEATURES APPLICATIONS POWER AMPLIFIER RADIATION ENVIRONMENTS ULTRA HIGH FREQUENCY T0-*61 *All leads isolated from case ABSOLUTE MAXIMUM RATINGS COLLECTOR-BASE VOLTAGE COLLECTOR-EMITTER VOLTAGE EMITTER-BASE VOLTAGE CONTINUOUS COLLECTOR CURRENT CONTINUOUS BASE CURRENT OPERATING JUNCTION TEMPERATURE STORAGE TEMPERATURE THERMAL RESISTANCE, JUNCTION TO CASE POWER DISSIPATION (25C) 2N5529 2N5533 2N5530* 2N5534* 60 V 90 V 40 V 75 V 3V 3V 10A 10 A 4A 4A 65C to +200C 65C to +200C 5C/W - 35 W 8-83-2R 20u . 5368602 SOLITRON DEVICES INC _ bbC D Ej B3babo2 OOOLa13 8 L- RADIATION RESISTANT NPN SILICON POWER TRANSISTORS 7722/7 ~ 2N5529 2N5530 2N5533 2N5534 SOLITRON DEVICES INC ELECTRICAL CHARACTERISTICS ( Tc = 25C UNLESS OTHERWISE NOTED) CHARACTERISTICS SYMBOL MIN. MAX. UNITS COLLECTOR EMITTER SUSTAINING VOLTAGE Veo (sus) (Ip = 50 mA) 2N5529, 2N5530 40 Vv 2N5533, 2N5534 75 V (ig= 50 mA, NOTE 2) 2N5529, 2N5530 40 V 2N5533,2N5534 75 Vv COLLECTOR-CUTOFF CURRENT leex (Voce = 30V, VpE = 0, To = 100C) 1.0 mA COLLECTOR-CUTOFF CURRENT leo (Vop= RATED) 1.0 mA (Vcp= RATED, NOTE 2) 1.0 mA COLLECTOR-CUTOFF CURRENT lego (Vcp= 30V) 0.1 mA (Vog = 30V, NOTE 2) 1.0 mA COLLECTOR-CUTOFF CURRENT lego (Vog= RATED) 50 mA EMITTER CUTOFF CURRENT lepo (Veg = 3.0V) 4.0 mA (Veg = 3.0V, NOTE 2) 1.0 mA EMITTER FLOATING POTENTIAL VeBF (Veg = RATED, le = 0) 1.0 v DC CURRENT GAIN) hee (VE 5.0V, Ico = 0.5A) 2N5529, 2N5530 40 300 (Vce 5.0V, Ic = 0.5A) 2N5533, 2N5534 25 300 (Voge 5.0V, Ic = 3.04) 2N5529, 2N5530 40 200 (Voce 5.0V, Io = 3.0A) 2N5533, 2N5534 30 150 (Vog 5.0V, Ic = 5.0A) 2N5529, 2N5530 25 (Voge 5.0V, Ic = 5.0A) 2N5533, 2N5534 20 (Vog 2.0V, Ig = 104) 2.5 (Vo 5.0V, I = 3.0A NOTE 2} 2N5529, 2N5530 15 (Voge 5.0V, ic = 3.0A NOTE 2) 2N5533, 2N5534 7.0 COLLECTOR-EMITTER SATURATION VOLTAGE!) Voe(sat) (I = 3.0A, Ig = 0.3A) 2N5529, 2N5530 1.25 V (I = 0.5A, Ip = 4.0A) 2N5533, 2N5534 1.25 V (Io = 10A, Ig = 4.04) 2.0 v (I = 3.0A, Ip = 0.34, NOTE 2) 2N5529, 2N5530 2.0 V (I = 3.0A, Ip = 0.5A, NOTE 2) 2N5533, 2N5534 3.0 V BASE-EMITTER SATURATION VOLTAGE") VBE{sat) (I = 3.0A, Ip = 0.3A) 2N5529, 2N5530 1.5 V (I = 3.0A, ip = 0.5A) 2N5533, 2N5534 1.5 Vv BASE-EMITTER VOLTAGE Vee (VoE = 5.0V, I = 3.0A) 15 v (Voge = 5.0V, Ig = 5.0) 3.0 v MAGNITUDE OF SMALL SIGNAL GAIN [hye] (Vce = 28V, Ig = 0.5A, f = 25 MHz) 8.0 SMALL SIGNAL GAIN hie (Voge = 5.0V, Ig = 3.0A,f = 1.0 KHz) 2N5529, 2N5530 20 2N5533, 2N5534 15 OUTPUT CAPACITANCE Cobo (Vo = 30V, f = 1.0 MHz) 75 pF Note 1: Pulsed 300 usec, 1.8% Duty Cycle Note 2: After exposure 1x 1014 nvt, FLUX = 10 KEV 218368602 SOLITRON DEVICES INC 6c 01914 D0 7733-Il Qeseaece coo1s34 0 9] RADIATION RESISTANT NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 ELECTRICAL CHARACTERISTICS ( Tc = 25C UNLESS OTHERWISE NOTED) CHARACTERISTICS SYMBOL MIN. MAX. UNITS PROMPT PRIMARY PHOTOCURRENT (7 = 1x109 R/sec, = 1Mev, Veg = 10V) 500 mA(PK) TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO Vee = 5 205529, 2NSS30 100 hFE Ic COLLECTOR CURRENT-A TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO Vee = 5 2N5533, 2N5534 1 1.0 0.1 1.0 10 ic COLLECTOR CURRENT-A VCEisat}-SATURATION VOLTAGE-V VCE; sat)-SATURATION VOLTAGE-V 01 1.0 10 Ic COLLECTOR CURRENT-A TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE 2N5530 = ic COLLECTOR CURRENT-A TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE 2N5533 2N5534 ost x 10 tnvt 225368602. SOLITRON DEVICES INC bbc D Bo esb6b0e O0oLiS h I RADIATION RESISTANT NPW SILICON POWER TRANSISTORS SOLITRON DEVICES INC N5529 2N5530 2N5533 2N5534 _ T 33-// SAFE OPERATING AREA (SOAR) INFORMATION The Safe Operating ARea (SOAR) principle is a method of specifying the exact transistor to use in an amplifier, switching or DC application. SOAR defines the region which encloses all of the points representing simultaneous values of the collector current and the collector-to -emitter voltage which a transistor can safely handle under specified conditions for base current, time, junction temperature and average power dissipation. With transistors specified under the Solitron SOAR technique, secondary breakdown Is virtually eliminated. The suggested test circuits are shown for each type of SOAR operation. Any other thermally stable circuit may also be used as long as the SOAR conditions and maximum ratings are observed. CONTINUOUS DC OPERATION SOAR VALUES Conditions: 1. T; = Toase + Oy-c PDC < 200C TYPE V1 v2 2. PDC < PDC max rating for specified transistor type NUMBER V V 3. PDC < PDC = f (VcE) Area A 2N5530 30 | 60 4. Vog = 24V (2N5529, 2N5530) 2N5534 65 | 90 52V (2N5533, 2N5534) FOS 2Vce 0 107 20 30.4060 VCE IN V 2383 ~SOLTTRON DEVICES INC PULSED OPERATION Conditions: 2. Pavg = 68602 LEC D Bp s36sece Oog1aib 3 W bcc 01916 RADIATION RESISTANT NPN SILICON POWER TRANSISTORS p 7733-7] 2N5529 -2N5530 2N5533 2N5534 1.Ty = Tcase + Oy-c Pava = 200C 1 2ms 2ms 0 power dissipation for a Vcg equal to the highest vce applied to the transistor ic vce dt < the allowed DC 3. Operation in the active region should be limited to a maximum puise width of tw = 1ms for Area B, tw = 0.5 ms for Area CC, tw = 0.25 ms for Area D, and tw = 0.10 ms for Area E. tr< 20 ps and tf = 20ys for Areas B-E. Ic (MAX) B C D E Vec Voce iG ws tws ws w< ims 0.5ms | 0.25ms 0.1ms 0 0.3V4 0.4V4 0.6V4 0.8V4 RESISTIVE AND CLAMPED INDUCTIVE SWITCHING (Switching from saturation to cutoff) Conditions: 1.Ty = Tg + Oy. Pavg = 200C 2, Pavg = ij y= ic vce dt = PDC max. 2ms 0 3. For the resistive loadiine, L = 0 and Voc = V2 4. tr < 2us, tt < 2 ws in Area F Ic MAX 0-252 @ OA DIODE Tc 52 L=ImH ~+4 2 SCOPE ig (1) 0 24_ bbC D By 83b8e0e oo0191? sf Paere = 733-1 RADIATION RESISTANT NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 = 0 SON DEVICES INC UNCLAMPED SWITCHING (Switching from saturation to cutoff) Conditions: 1. Ty = Tg + Oy. Pavg = 200C 2. Pavg = 1 ms ic vce dt <= PDC max. 2ms 0 3. Io peak <= Ic max rating for specified transistor type 4. % LIC? < 80uWs LIN #H 25