DSA70C150HB
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA70C150HB
Backside: cathode
FAV
F
VV0.77
RRM
35
150
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA70C150HB
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.90
R0.7 K/
W
R
min.
35
V
RSM
V
680T = 25°C
VJ
T = °C
VJ
m
A
7.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
215
W
T = 25°C
C
RK/
W
35
150
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.06
T = 25°C
VJ
125
V
F0
V
0.53T = °C
VJ
175
r
F
4.9 m
Ω
V
0.77T = °C
VJ
I = A
F
V
35
0.94
I = A
F
70
I = A
F
70
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
150
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
226
j
unction capacitance V = V24 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
600
A
150
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
150
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA70C150HB
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
D
S
A
70
C
150
HB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 50 A
per terminal
150-55
TO-247
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA70C150HB 506708Tube 30DSA70C150HBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.53
mΩ
V
0 max
R
0 max
slope resistance * 2.3
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA70C150HB
S
ØPØ P1 D2
D1
E1
4
123
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA70C150HB
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
10
20
30
40
50
60
70
04080120160
0.0001
0.001
0.01
0.1
1
10
100
10 30 5002040
0
10
20
30
40
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 50 100 150 200
0
10
20
30
40
50
60
0 40 80 120 160
0
100
200
300
400
500
600
700
800
900
1000
DC
25°C
50°C
75°C
100°C
125°C
Single Pulse
T
VJ
=175°C
150°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
t[ms]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
I
F(AV)
[A]
T
VJ
=
150°C
125°C
25°C T
VJ
=25°C
d= 0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
Z
thJC
[K/W]
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
