2N5031
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver,
applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 10
Vdc
VCBO Collector-Base Voltage 15 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc
IC Collector Current 20 mA
Thermal Data
PD Total Device Dissipation @ TA = 25ºC
Derate above 25ºC 200
1.14 mWatts
mW/ ºC
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor
• 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5031
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
10
-
-
Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= 0.01 mAdc, IE=0)
15
-
-
Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.01mAdc, IC = 0)
3.0
-
- Vdc
ICBO Collector Cutoff Current
(VCE = 6.0 Vdc, IE = 0 Vdc)
-
1.0
10
nA
(on)
HFE DC Current Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc)
25
-
300
-
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
fT Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
1200
-
2500
MHz
CCB Output Capacitance
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)
-
2.5
-
dB
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
GU max Maximum Unilateral Gain (1) IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
-
12
-
dB
MAG Maximum Available Gain IC = 1 mAdc, VCE = 6Vdc,
f = 400 MHz
-
12.4
-
dB
2N5031
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 .610 -137 23.8 116 .026 46 .522 -78
200 .659 -161 13.2 98 .033 47 .351 -106
300 .671 -171 9.0 89 .040 51 .304 -120
400 .675 -178 6.8 83 .047 55 .292 -128
500 .677 176 5.5 77 .055 58 .293 -132
600 .678 172 4.6 72 .064 61 .299 -134
700
.677 168 4.0 68 .073 62 .306 -135
800 .679 184 3.5 64 .082 63 .314 -136
900
.678 160 3.1 60 .092 64 .322 -138
1000 .682 156 2.8 56 .102 65 .311 -139
2N5031
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
