©2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A
IGBT
FGAF40N60UF
FGAF40N60UF
Ultraf ast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description FGAF40N60UF Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C40 A
Collector Current @ TC = 100°C20 A
ICM (1) Pulsed Collector Current 160 A
PDMaximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ TC = 100°C40 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Juncti on-to-Case -- 1.2 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics , and servo controls.
GCE
TO-3PF
G
C
E
G
C
E
FGAF40N60UF Rev. A
FGAF40N60UF
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Volt age VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G -E Th reshold Voltage IC = 20mA, VCE = VGE 3.5 5.1 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 20A, VGE = 15V -- 2.3 3.0 V
IC = 40A, VGE = 15V -- 3.1 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 1075 -- pF
Coes Output Capacitance -- 170 -- pF
Cres Reverse Transfer Capacitance -- 50 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 15 -- ns
trRise Time -- 30 -- ns
td(off) Turn-Off D e l a y Time -- 65 130 n s
tfFall Time -- 35 100 ns
Eon Turn-On Switching Loss -- 470 -- uJ
Eoff Tu r n - Off Sw i tchin g Lo ss -- 130 -- uJ
Ets Total Switching Loss -- 600 1000 uJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 30 -- ns
trRise Time -- 37 -- ns
td(off) Turn-Off D e l a y Time -- 110 200 ns
tfFall Time -- 80 250 ns
Eon Turn-On Switching Loss -- 500 -- uJ
Eoff Turn-Off Switching Lo s s -- 310 -- uJ
Ets Total Switching Loss -- 810 1200 uJ
QgTotal Gate Charge VCE = 300 V, IC = 20A,
VGE = 15V
-- 77 150 nC
Qge Gate-Emitter Charge -- 20 30 nC
Qgc Gate-Collector Charge -- 25 40 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
FGAF40N60UF Rev. A
FGAF40N60UF
©2004 Fairchild Semiconductor Corporation
0.1 1 10 100 1000
0
5
10
15
20
25
30 Vcc = 300V
Load Current : peak of square wave
Duty cy cle : 5 0 %
Tc = 100℃
Powe Dissipation = 24W
Load Current [A]
Frequency [kHz]
Fig 1. Ty pica l Output Cha rac teristics Fig 2. Typical Saturation Voltag e
Characteristics
Fig 4. Load Curren t vs . Frequency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
02468
0
40
80
120
160
12V
15V
20V
VGE = 10V
Com mon Emitte r
Tc = 25℃
Collector Current, Ic (A)
Collector-Emitter Voltage,VCE(V)
110
0
10
20
30
40
50
60
70
80
0.5
Common Emitter
VGE=15V
Tc= 25℃
Tc= 125℃
Collec to r C u rrent , Ic (A)
Collector-Emitter Voltage, VCE(V)
0306090120150
0
1
2
3
4
20A
Ic=10A
40A
Common Emitter
Vge=15V
Case Temperature, TC [℃]
Collector - Emitter Voltage, V
CE [V]
0 4 8 12 16 20
0
4
8
12
16
20
40A
20A
IC = 10A
Comm on Emitter
TC = 25℃
Gate - Emitter Voltage, VGE [V]
Collector - Em i tter Voltage , V CE [V]
0 4 8 121620
0
4
8
12
16
20
20A
40A
Ic=10A
Common Emitter
TC = 125℃
Collector - Emitter Voltage, V CE [V]
Gate - Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
FGAF40N60UF Rev. A
FGAF40N60UF
©2004 Fairchild Semiconductor Corporation
Fig 7. Capaci tanc e C harac t eristics Fig 8. Tur n- O n C har acteristi cs v s.
Gate Resistance
Fig 9. Tur n-Off Charac teri st ics vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On C har acteristi cs vs .
Collector Current Fig 12. Tur n- O ff C haracterist i cs vs.
Collector Current
110
0
500
1000
1500
2000
2500
3000 Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
30
Cres
Coes
Cies
Capacitance (pF)
Collector-Emitter Voltage, VCE (V)
110100
100
1000
20 200
Tf
Common Emi tter
Vcc=300V,VGE= ±15V
Ic=20A
Tc = 25℃
Tc = 125℃ Toff
Tf
Switching Time (ns)
Gate Resistance, RG( Ω)
1 10 100
100
1000
2000
50 200
Eon
Eoff
Common Emitter
Vcc=300V,VGE=±15V
Ic=20A
Tc = 25℃
Tc = 125℃
Switching Time (uJ)
Gate Resistance, RG( Ω)
10 15 20 25 30 35 40
10
100
200
Tr
Ton
Collector Current, Ic (A)
Switchin g Ti m e (n s )
Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 2 5 ℃
TC = 125℃
10 15 20 25 30 35 40
100
1000
20
Tf
Toff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Collector Current, IC [A]
Sw itc h in g T im e [n S]
Toff
Tf
110100
10
100
200
300
Ton
Tr
Common Emitter
Vcc=300V,VGE= ±15V
Ic=20A
Tc = 25℃
Tc = 125℃ - - - -
Switching Time (ns)
Gate Resistance, RG( Ω)
FGAF40N60UF Rev. A
FGAF40N60UF
©2004 Fairchild Semiconductor Corporation
1E-5 1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
10.5
0.2
0.1
0.05
0.02
0.01
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
1 10 100 1000
0.1
1
10
100
500
Safe Operating Area
VGE=20V , TC=100oC
Collec to r Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
Fig 14. Gate C harge Char acteristics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Dut y factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Tra nsien t The rma l Imped anc e of IGBT
10 15 20 25 30 35 40
10
100
1000
3000
Eoff
S witch in g T ime (u J )
Eon
Eoff Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
C o lle c to r C u rre n t , Ic (A)
0 306090120
0
3
6
9
12
15
200V
300V
Vcc=100V
Common Emitter
RL=15 Ω
(Tc=25 ℃)
Ga te-E mitter Vo ltage , V GE (V)
Gate C harge, Qg (nC )
1 10 100 1000
0.1
1
10
100
50µs
100µs
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25 oC
Curves must be derated
linearly with increase
in temperature
C ollec tor Current, Ic [A ]
Collec tor - E m itter V o ltag e, V CE [V]
©2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A
FGAF40N60UF
Package Dimensions
TO-3PF
15.50 ±0.20 ø3.60 ±0.20
26.50 ±0.20
4.50 ±0.20
10.00 ±0.20
16.50 ±0.20
10°
16.50 ±0.20
22.00 ±0.20
23.00 ±0.20
1.50 ±0.20
14.50 ±0.20
2.00 ±0.20
2.00 ±0.20 2.00 ±0.20
0.85 ±0.03
2.00 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
3.30 ±0.20
2.00 ±0.20
4.00 ±0.20
2.50 ±0.20
14.80 ±0.20
3.30 ±0.20
2.00 ±0.20
5.50 ±0.20
0.75 +0.20
–0.10
0.90 +0.20
–0.10
5.45TYP
[5.45 ±0.30]5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Statu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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